公开(公告)号：US20150091560A1

公开(公告)日：2015-04-02

申请号：US14379706

申请日：2013-02-19

Applicant: Jiangsu Multidimension Technology Co., Ltd.

Inventor： James Geza Deak ,  Insik Jin ,  Weifeng Shen ,  Songsheng Xue

IPC: G01R33/09 ,  H01L43/08

Abstract: The present invention relates to a magnetoresistive sensor for measuring a magnetic field. A calculation of the sensitivity to external magnetic fields is provided, and it is shown to be related to the shape anisotropy of the magnetoresistive sensing elements. Moreover, it is shown that sensitivity may be made highest when the shape of the magnetoresistive element is long parallel to the sensing axis, and a magnetic bias field strong enough to saturate the magnetoresistive element's magnetization, Hcross, is applied perpendicular to the sensing axis. A monolithic permanent magnet is provided to generate the Hcross and it may be applied at an angle in order to counteract non-ideal fields along the sense axis direction. The high sensitivity magnetoresistive element can be used in many electrical form-factors. Six exemplary bridge configurations are described herein.

Abstract translation: 本发明涉及用于测量磁场的磁阻传感器。 提供了对外部磁场的灵敏度的计算，并且显示与磁阻感测元件的形状各向异性有关。 此外，显示出当磁阻元件的形状长于平行于感测轴的情况下，灵敏度可能最高，并且垂直于感测轴施加足以使磁阻元件的磁化Hcross饱和的磁偏置场。 提供单片永磁体以产生Hcross，并且可以以一定角度施加单片永磁体，以抵消沿着感测轴方向的非理想场。 高灵敏度磁阻元件可用于许多电形式。 这里描述了六个示例性的桥结构。