公开(公告)号：US06819183B1

公开(公告)日：2004-11-16

申请号：US10445218

申请日：2003-05-23

申请人： Jianjun Zhou ,  Xuejun (Andy) Zhang

发明人： Jianjun Zhou ,  Xuejun (Andy) Zhang

IPC分类号： H03F304

CPC分类号： H03G1/04 ,  H03F1/301

摘要： Compensation for variations in temperature and manufacturing process of a MOSFET operating in its sub-threshold mode. The compensation may include circuitry containing at least a second MOSFET that may also operate in its sub-threshold mode. The operational characteristics of the second MOSFET may be closely matched to those of the first MOSFET, and the second MOSFET may be contained on the same substrate.

摘要翻译： 补偿在其阈值模式下工作的MOSFET的温度变化和制造工艺。 该补偿可以包括至少包含第二MOSFET的电路，该第二MOSFET也可以在其次阈值模式下工作。 第二MOSFET的操作特性可以与第一MOSFET的操作特性紧密匹配，并且第二MOSFET可以包含在同一衬底上。