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公开(公告)号：US07649173B2
公开(公告)日：2010-01-19
申请号：US11618728
申请日：2006-12-29
申请人： Jianqiang Hu , Zhixian Rui , Yanli Zhao , Yanjun Wang , Ming Li , Min Pan
发明人： Jianqiang Hu , Zhixian Rui , Yanli Zhao , Yanjun Wang , Ming Li , Min Pan
CPC分类号： G01N1/32
摘要： A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.
摘要翻译： 一种制备TEM样品的方法，包括以下步骤：提供具有两个凹坑的样品和两个凹坑之间的失效区域，所述失效区域包括半导体器件; 铣削故障区域的第一表面，直到半导体器件的横截面露出; 蚀刻失效区域的第一表面; 清洗样品; 铣削失效区域的第二表面，直到失效区域可以通过电子束。 可以通过上述步骤制备用于高分辨率TEM的样品。 当观察样品时，很容易区分轻掺杂漏极，源极/漏极区域与硅衬底，并清楚地观察到轻掺杂漏极，源极/漏极区域中的图案和缺陷; 此外，在故障区域中容易区分BPSG和非掺杂二氧化硅。
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公开(公告)号：US20080078742A1
公开(公告)日：2008-04-03
申请号：US11618728
申请日：2006-12-29
申请人： Jianqiang HU , Zhixian Rui , Yanli Zhao , Yanjun Wang , Ming Li , Min Pan
发明人： Jianqiang HU , Zhixian Rui , Yanli Zhao , Yanjun Wang , Ming Li , Min Pan
CPC分类号： G01N1/32
摘要： A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.
摘要翻译： 一种制备TEM样品的方法，包括以下步骤：提供具有两个凹坑的样品和两个凹坑之间的失效区域，所述失效区域包括半导体器件; 铣削故障区域的第一表面，直到半导体器件的横截面露出; 蚀刻失效区域的第一表面; 清洗样品; 铣削失效区域的第二表面，直到失效区域可以通过电子束。 可以通过上述步骤制备用于高分辨率TEM的样品。 当观察样品时，很容易区分轻掺杂漏极，源极/漏极区域与硅衬底，并清楚地观察到轻掺杂漏极，源极/漏极区域中的图案和缺陷; 此外，在故障区域中容易区分BPSG和非掺杂二氧化硅。
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