摘要:
A method includes receiving a representation of a spun tool and receiving a path for the spun tool. The method also includes calculating a profile of the spun tool and simulating movement of the spun tool over the path. The method includes determining critical positions along the path at which the composition of the profile of the spun tool changes based on the path, and re-calculating the composition of the profile of the spun tool for each side of a critical position. The method further includes re-calculating the shape of the profile of the spun tool at non-critical positions of the path. The method further includes determining a volume defined by moving the spun tool along the path between a first critical position and a second critical position, changing the profile of the spun tool at each critical position, and calculating a total volume based on the path.
摘要:
A compound as shown in formula I. R1 is selected from the group consisting of —OH, —CH3, —CH2CH3, —OCH3, —OCH2CH3; R2 is selected from the group consisting of —H, —OH, —CH3, —CH2CH3, —CH2CH2CH3, —OCH3, —OCH2CH2CH3; R3 is selected from the group consisting of —F, —Cl, —Br, —I, —CF3; R4 is selected from the group consisting of —H, —F, —Cl, —Br, —I, —CF3; and R5 is selected from the group consisting of —H, —CH3, —CH2CH3.
摘要:
Taught herein is an aqueous chemical-mechanical polishing slurry, a method for manufacturing the same, and a method for using the same in the preparation of high precision finishing of a sapphire surface. The slurry comprises a chelating agent having 13 chelate rings, a strong propensity for complexation with aluminum ions and for forming a water-soluble chelate product. The removal rate can reach 10-16 μm/h, and the roughness can be reduced to 0.1 nm. The slurry components and their weight percentages are as follows: silica sol from about 1 wt. % to about 90 wt. %, alkali modifier from about 0.25 wt. % to about 5 wt. %, ether-alcohol activator from 0.5 wt. % to about 10 wt. %, chelating agent from about 1.25 wt. % to about 15 wt. %, and deionized water. Using such a slurry, high precision finishing of a sapphire surface can be achieved under relevant polishing conditions, which can satisfy the finishing requirements for industrial sapphire substrate. The slurry has the advantages of low cost, low roughness, and high removal rates, and it does not pollute the environment or damage the etching equipment.