摘要:
An electron emission device includes a substrate, a cathode electrode located on the substrate and having a first opening, the cathode electrode including a material that substantially blocks ultraviolet rays, an electron emission region that is located in the first opening and adapted to emit electrons, a gate electrode that is electrically insulated from the cathode electrode, the gate electrode including a material that substantially blocks ultraviolet rays, and a plurality of insulation layers located between the cathode and gate electrodes. The plurality of insulation layers includes first and second insulation layers adjacent to each other. The first insulation layer has a first etching rate that is different from a second etching rate of the second insulation layer.
摘要:
A method of manufacturing the electron emission device is provided. A cathode electrode is formed on a substrate. A first insulation layer of a transparent conductive material is formed on an entire surface of the substrate while covering the cathode electrode. A gate electrode of a transparent conductive material is formed on the first insulation layer in a direction crossing the cathode electrode. A photoresist mask layer is formed on the entire surface of the substrate. An opening corresponding to the opening of the cathode electrode is formed on the photoresist mask layer by emitting ultraviolet light to a rear surface of the substrate and developing the photoresist mask layer. An exposed portion of the gate electrode by the opening of the photoresist mask layer and a portion of the first insulation layer are etched. An electron emission region is formed in the opening of the cathode electrode.
摘要:
An electron emission device includes a substrate, cathode electrodes and gate electrodes formed on the substrate crossing one another to thereby form a plurality of crossed regions, and electron emission regions, each electrically coupled to one of the cathode electrodes. Each of the cathode electrodes includes a resistive layer formed with first openings, and a conductive layer disposed on one surface of the resistive layer, and formed with second openings. The second openings are spatially communicated respectively with the first openings, and circumferential wall portions of the conductive layer defining the second openings maintain a predetermined spacing from circumferential wall portions of the resistive layer defining the first openings. The electron emission regions are then disposed in the first openings.
摘要:
An electron emission display includes an electron emission unit on a first substrate adapted to emit electron beams, a light emission unit on a second substrate, the light emission unit including a plurality of photoluminescent layers facing the electron and emission unit, a plurality of spacers between the first and second substrates along a first direction, wherein each photoluminescent layer of the plurality of photoluminescent layers satisfies a proviso that (a−b)/2>c, where “a” is a length of the photoluminescent layer in a second direction, “b” is a magnitude of an electron beam spot on the photoluminescent layer in the second direction, and “c” is a shifting distance of the electron beam spot in the second direction.
摘要:
An electron emission display includes an electron emission unit on a first substrate adapted to emit electron beams, a light emission unit on a second substrate, the light emission unit including a plurality of photoluminescent layers facing the electron and emission unit, a plurality of spacers between the first and second substrates along a first direction, wherein each photoluminescent layer of the plurality of photoluminescent layers satisfies a proviso that (a−b)/2>c, where “a” is a length of the photoluminescent layer in a second direction, “b” is a magnitude of an electron beam spot on the photoluminescent layer in the second direction, and “c” is a shifting distance of the electron beam spot in the second direction.
摘要:
An electron emission device includes i) a substrate, ii) a cathode electrode on the substrate, having a first opening, and comprising an ultraviolet non-transmitting material, iii) an electron emission region in the first opening and for emitting electrons, and iv) a gate electrode electrically insulated from the cathode electrode and having a second opening through which the electrons emitted from the electron emission region pass. The ultraviolet transmittance of the gate electrode is about 30% or more. A distance between a first imaginary line passing through a center of the electron emission region and normal to a plane surface of the substrate, and a second imaginary line passing through a center of the second opening and normal to the plane surface of the substrate is about 0.5 μm or less.
摘要:
An electron emission device and a display device having the electron emission device are provided. The electron emission device includes a plurality of driving electrodes located on a substrate and a plurality of electron emission regions electrically coupled to the driving electrodes. Each of the driving electrodes includes a first metal layer, a second metal layer, and a third metal layer. Here, the following condition is satisfied: T3/T1≧1.0, where T1 is a thickness of the first metal layer and T3 is a thickness of the third metal layer.
摘要:
A pixel includes an organic light emitting diode (OLED), a driving transistor for controlling a current supplied to the OLED, a first transistor for transmitting a data signal to the driving transistor, and a capacitor coupled between the driving transistor and the first transistor. A driving method of the pixel includes initializing a gate voltage of the driving transistor, compensating a threshold voltage of the driving transistor, and transmitting a data signal to the driving transistor through the capacitor. A period for compensating the threshold voltage is longer than a period for transmitting the data signal to the driving transistor. Sufficient time to compensate the threshold voltage of the driving transistor of the pixel may be obtained under high resolution and high frequency driving to realize a display device of high image quality.
摘要:
An organic light emitting diode (OLED) display includes: a switching thin film transistor including a switching gate electrode, a switching active layer, a switching source electrode, and a switching drain electrode; a driving thin film transistor including a driving gate electrode, a driving active layer, a driving source electrode, and a driving drain electrode; a capacitor including a first capacitor electrode and a second capacitor electrode; a scan line that is connected to the switching gate electrode of the switching thin film transistor; a data line that intersects the scan line and that is connected to the switching source electrode of the switching thin film transistor; a first power source line that is parallel to the data line and that is connected to the driving source electrode of the driving thin film transistor; a second power source line that is separated parallel to the data line and that is connected to the second capacitor electrode of the capacitor; and an organic light emitting diode that is connected to the driving drain electrode of the driving thin film transistor.
摘要:
An organic light emitting diode (OLED) display includes: a switching thin film transistor including a switching gate electrode, a switching active layer, a switching source electrode, and a switching drain electrode; a driving thin film transistor including a driving gate electrode, a driving active layer, a driving source electrode, and a driving drain electrode; a capacitor including a first capacitor electrode and a second capacitor electrode; a scan line that is connected to the switching gate electrode of the switching thin film transistor; a data line that intersects the scan line and that is connected to the switching source electrode of the switching thin film transistor; a first power source line that is parallel to the data line and that is connected to the driving source electrode of the driving thin film transistor; a second power source line that is separated parallel to the data line and that is connected to the second capacitor electrode of the capacitor; and an organic light emitting diode that is connected to the driving drain electrode of the driving thin film transistor.