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1.发明申请INVERTER LOGIC DEVICES INCLUDING GRAPHENE FIELD EFFECT TRANSISTOR HAVING TUNABLE BARRIER 有权逆变器逻辑器件，包括具有可控阻挡层的石墨场效应晶体管公开(公告)号：US20130048948A1
公开(公告)日：2013-02-28
申请号：US13593708
申请日：2012-08-24
申请人： Jin-seong HEO , Seong-jun PARK , Hyun-jong CHUNG , Hyun-jae SONG , Hee-jun YANG , David SEO
发明人： Jin-seong HEO , Seong-jun PARK , Hyun-jong CHUNG , Hyun-jae SONG , Hee-jun YANG , David SEO
CPC分类号： H01L29/1606 , B82Y10/00 , H01L21/823807 , H01L27/092 , H01L29/66045 , H01L29/78684
摘要： Inverter logic devices include a gate oxide on a back substrate, a first graphene layer and a second graphene layer separated from each other on the gate oxide, a first electrode layer and a first semiconductor layer separated from each other on the first graphene layer, a second electrode layer and a second semiconductor layer separated from each other on the second graphene layer, and an output electrode on the first and second semiconductor layers and configured to output an output signal. The first semiconductor layer is doped with a different type of impurities selected from n-type impurities and p-type impurities than the second semiconductor layer.
摘要翻译： 逆变器逻辑器件包括背面衬底上的栅极氧化物，在栅极氧化物上彼此分离的第一石墨烯层和第二石墨烯层，在第一石墨烯层上彼此分离的第一电极层和第一半导体层， 第二电极层和在第二石墨烯层上彼此分离的第二半导体层，以及在第一和第二半导体层上的输出电极，并且被配置为输出输出信号。 第一半导体层掺杂有比第二半导体层选自n型杂质和p型杂质的不同类型的杂质。
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2.发明申请METHOD OF TRANSFERRING GRAPHENE USING TRENCH AND SUBSTRATE FOR RECEIVING GRAPHENE 有权使用TRENCH和基板传输石墨以接收石墨的方法公开(公告)号：US20130065022A1
公开(公告)日：2013-03-14
申请号：US13589650
申请日：2012-08-20
申请人： David SEO , Jin-seong HEO , Hyun-jong CHUNG , Hee-jun YANG , Seong-jun PARK , Hyun-jae SONG
发明人： David SEO , Jin-seong HEO , Hyun-jong CHUNG , Hee-jun YANG , Seong-jun PARK , Hyun-jae SONG
CPC分类号： H01L29/1606 , H01L21/2007 , Y10T156/10 , Y10T428/2457 , Y10T428/24612
摘要： A method of transferring graphene includes patterning an upper surface of a substrate to form at least one trench therein, providing a graphene layer on the substrate, the graphene layer including an adhesive liquid thereon, pressing the graphene layer with respect to the substrate, and removing the adhesive liquid by drying the substrate.
摘要翻译： 转移石墨烯的方法包括图案化衬底的上表面以在其中形成至少一个沟槽，在衬底上提供石墨烯层，所述石墨烯层包括其上的粘合剂液体，相对于衬底压制石墨烯层，并且去除 粘合剂液体通过干燥基材。
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公开(公告)号：US20130048951A1
公开(公告)日：2013-02-28
申请号：US13591732
申请日：2012-08-22
申请人： Jin-Seong HEO , Hyun-jong CHUNG , Hyun-jae SONG , Seong-jun PARK , David SEO , Hee-jun YANG
发明人： Jin-Seong HEO , Hyun-jong CHUNG , Hyun-jae SONG , Seong-jun PARK , David SEO , Hee-jun YANG
CPC分类号： H01L29/1606 , B82Y10/00 , H01L29/0895 , H01L29/165 , H01L29/41725 , H01L29/778 , H01L29/7781 , H01L29/78684
摘要： According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the graphene layer, and a second electrode on a second region of the graphene layer. The semiconductor layer may be doped with one of an n-type impurity and a p-type impurity. The semiconductor layer may face the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. The second region of the graphene layer may be separated from the first region on the graphene layer.
摘要翻译： 根据示例性实施例，石墨烯切换装置具有可调屏障。 石墨烯开关装置可以包括栅极衬底，栅极衬底上的栅极电介质，栅极电介质上的石墨烯层，顺序地堆叠在石墨烯层的第一区域上的半导体层和第一电极，以及第二电极， 石墨烯层的第二区域。 半导体层可以掺杂有n型杂质和p型杂质中的一种。 半导体层可以面对栅极衬底，其中石墨烯层位于半导体层和栅极衬底之间。 石墨烯层的第二区域可以与石墨烯层上的第一区域分离。
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