公开(公告)号：US08084819B2

公开(公告)日：2011-12-27

申请号：US12650137

申请日：2009-12-30

申请人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

发明人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

IPC分类号： H01L27/01 ,  H01L21/4763

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

摘要： Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.

摘要翻译： 提供半导体存储器件和形成半导体存储器件的方法。 所述方法可以包括形成交替层叠在基板上的绝缘层和单元栅极层，通过连续图案化通过单元栅极层和绝缘层形成开口，并且在开口中的单元栅极层的侧壁上选择性地形成导电阻挡层 。

公开(公告)号：US08173533B2

公开(公告)日：2012-05-08

申请号：US13299855

申请日：2011-11-18

申请人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

发明人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

IPC分类号： H01L21/4763 ,  H01L27/01

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

摘要： Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.

摘要翻译： 提供半导体存储器件和形成半导体存储器件的方法。 所述方法可以包括形成交替层叠在基板上的绝缘层和单元栅极层，通过连续图案化通过单元栅极层和绝缘层形成开口，并且在开口中的单元栅极层的侧壁上选择性地形成导电阻挡层 。

公开(公告)号：US20100163968A1

公开(公告)日：2010-07-01

申请号：US12650137

申请日：2009-12-30

申请人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

发明人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

IPC分类号： H01L29/792 ,  H01L21/336

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

摘要： Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.

摘要翻译： 提供半导体存储器件和形成半导体存储器件的方法。 所述方法可以包括形成交替层叠在基板上的绝缘层和单元栅极层，通过连续图案化通过单元栅极层和绝缘层形成开口，并且在开口中的单元栅极层的侧壁上选择性地形成导电阻挡层 。

公开(公告)号：US08415742B2

公开(公告)日：2013-04-09

申请号：US13442804

申请日：2012-04-09

申请人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

发明人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

IPC分类号： H01L27/12 ,  H01L21/4763

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

摘要： Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.

摘要翻译： 提供半导体存储器件和形成半导体存储器件的方法。 所述方法可以包括形成交替层叠在基板上的绝缘层和单元栅极层，通过连续图案化通过单元栅极层和绝缘层形成开口，并且在开口中的单元栅极层的侧壁上选择性地形成导电阻挡层 。

公开(公告)号：US20120193700A1

公开(公告)日：2012-08-02

申请号：US13442804

申请日：2012-04-09

申请人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

发明人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

IPC分类号： H01L29/792

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

摘要： Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.

公开(公告)号：US20120064681A1

公开(公告)日：2012-03-15

申请号：US13299855

申请日：2011-11-18

申请人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

发明人： Jingyun Kim ,  Myoungbum Lee ,  Kihyun Hwang

IPC分类号： H01L21/336

CPC分类号： H01L27/11582 ,  H01L27/11519 ,  H01L27/11556 ,  H01L27/11565

摘要： Semiconductor memory devices and methods of forming semiconductor memory devices are provided. The methods may include forming insulation layers and cell gate layers that are alternately stacked on a substrate, forming an opening by successively patterning through the cell gate layers and the insulation layers, and forming selectively conductive barriers on sidewalls of the cell gate layers in the opening.

摘要翻译： 提供半导体存储器件和形成半导体存储器件的方法。 所述方法可以包括形成交替层叠在基板上的绝缘层和单元栅极层，通过连续图案化通过单元栅极层和绝缘层形成开口，并且在开口中的单元栅极层的侧壁上选择性地形成导电阻挡层 。