公开(公告)号：US06946667B2

公开(公告)日：2005-09-20

申请号：US10299443

申请日：2002-11-19

申请人： Jiong Chen ,  Zhming Wan ,  Qing Qian

发明人： Jiong Chen ,  Zhming Wan ,  Qing Qian

IPC分类号： H01J37/317 ,  G21K5/10 ,  H01J37/08

CPC分类号： H01J37/3171 ,  H01J37/244 ,  H01J2237/024 ,  H01J2237/04756 ,  H01J2237/057 ,  H01J2237/24405 ,  H01J2237/24528

摘要： An ion implantation method is disclosed in this invention. The disclosed method is for implanting a target wafer with ions extracted from an ion source traveling along an original ion beam path. The method includes steps of a) employing a set of deceleration electrodes disposed along the original ion beam path before the target wafer for decelerating and deflecting the ion beam to the target wafer; and b) employing a charged particle deflecting means disposed between the ion source and the set of deceleration electrodes for deflecting the ion beam away from original ion beam path and projecting to the set of electrodes with an incident angle for the set of electrodes to deflect the ion beam back to the original ion beam path for implanting the target wafer.

摘要翻译： 在本发明中公开了一种离子注入方法。 所公开的方法是用离子源从原始离子束路径移动的离子注入目标晶片。 该方法包括以下步骤：a）在目标晶片之前沿着原始离子束路径采用一组减速电极，用于使离子束减速和偏转到目标晶圆; 以及b）使用设置在所述离子源和所述一组减速电极之间的带电粒子偏转装置，用于使所述离子束偏离原始离子束路径，并以所述电极组的入射角向所述电极组突出以使所述电极组偏转 离子束返回到原始离子束路径，用于植入目标晶片。