Laser frequency doubling device of ReCa4O(BO3)3 crystal with specific cut angles
    1.
    发明授权
    Laser frequency doubling device of ReCa4O(BO3)3 crystal with specific cut angles 有权
    ReCa4O(BO3)3晶体的激光倍频装置具有特定的切割角度

    公开(公告)号:US06625186B1

    公开(公告)日:2003-09-23

    申请号:US09590271

    申请日:2000-06-09

    IPC分类号: H01S316

    CPC分类号: G02F1/3551 H01S3/109

    摘要: The present invention belongs to the field of optoectronics. The main content of the present invention is to determine the optimum cut-orientations of ReCOB crystal frequency-doubling devices. For an example, the cut-angles of the YCOB crystal for 1064 nm are &thgr;1=(65.9±5.0)°, &phgr;1=(36.9±5.0)° or &thgr;2=(66.3±5)°, &phgr;2=(143.5±5)°. The present invention has solved the problem of low frequency-doubling conversion efficiency in the prior technique. The frequency-doubling technique of the present invention has advantages of high frequency-doubling conversion efficiency and low energy dissipation, and is useful for the application of the ReCOB crystal.

    摘要翻译: 本发明属于光电子学领域。 本发明的主要内容是确定ReCOB晶体倍频装置的最佳切割取向。 例如,1064nm的YCOB晶体的切角为θ1=(65.9±5.0)°,phi1 =(36.9±5.0)°或θ2=(66.3±5)°,phi2 =(143.5±5) °。 本发明解决了现有技术中低倍频转换效率的问题。 本发明的倍频技术具有转换效率高,能量耗散低的优点,对于ReCOB晶体的应用是有用的。

    Electrooptic Q-switch element made of crystal
    2.
    发明授权
    Electrooptic Q-switch element made of crystal 有权
    电光Q开关元件由晶体制成

    公开(公告)号:US07130318B2

    公开(公告)日:2006-10-31

    申请号:US10441404

    申请日:2003-05-20

    IPC分类号: H01S3/11 H01S3/115

    摘要: This invention is a kind of electrooptic Q-switch element made of a single crystal and belongs to the application of crystal in electrooptic technology field. The invention consists of electrooptic Q-switch which is made of La3Ga5SiO14 or Nd:La3Ga5SiO14 or the other related crystal materials such as La3Ga5-xAlxSiO14, Sr3Ga2Ge4SiO14, Na2CaGe6O14, Ca3Ga2Ge4O14, La3Ga5.5Nb0.5O14 and La3Ga5.5Ta0.5O14 with the common shape or a specific shape containing Brewster angle as shown in figure. This kind of electrooptic Q-switch can be used in YAG laser and other laser. It overcomes the shortages of the commercial Q-switches, such as the high, un-adjustable, low stable half-wave voltage and great half-wave voltage variation with temperature. The advantage of this kind of electrooptic Q-switch is its low, adjustable, high stable half-wave voltage.

    摘要翻译: 本发明是一种由单晶制成的电光Q开关元件,属于电光技术领域晶体的应用。 本发明由电光Q开关组成,其由La 3 Ga 5 SiO 14或Nd:La 3 N 3 / > Ga 5 SiO 2或其它相关的晶体材料,例如La 3 Ga 5-x Al 2 O 3 > SiO 2 SiO 14,Sr 3 Ga 2 SiO 4 SiO 14, Na 2,Na 2 CaGe 6 O 14,Ca 3 Ga 2 Ge 4 14 5 5 和具有共同形状或特定形状的La 3 N 5 S 5 H 5 O 5 O 14 14包含 布鲁斯特角如图所示。 这种电光Q开关可用于YAG激光等激光器。 克服了商用Q开关的缺点,如高,不可调,低稳定的半波电压和大的半波电压随温度变化。 这种电光Q开关的优点是其低,可调,高稳定的半波电压。