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1.发明申请CIRCUIT ARRANGEMENT AND IMAGING PYROMETER FOR GENERATING LIGHT- AND TEMPERATURE-DEPENDENT SIGNALS 有权用于生成光和温度相关信号的电路布置和成像光电公开(公告)号：US20100278212A1
公开(公告)日：2010-11-04
申请号：US12773349
申请日：2010-05-04
CPC分类号： G01J5/60 , G01J5/602 , H01L31/02005 , H01L31/02165 , H01L31/103 , H01L31/105
摘要： A circuit arrangement for generating light-dependent and temperature-dependent signals has a number of first and second sensor elements, which generate a number of first and second electrical signals. The first and second electrical signals depend on electromagnetic radiation impinging on the circuit arrangement. The first sensor elements are designed to generate the first electrical signals in a manner dependent on electromagnetic radiation from a first wavelength range which comprises a substantial part of the visible light. The second sensor elements are designed to generate the second electrical signals in a manner dependent on electromagnetic radiation from a second wavelength range which predominantly comprises infrared radiation. The first wavelength range overlaps the second wavelength range and it therefore also comprises infrared radiation.
摘要翻译： 用于产生光依赖和依赖于温度的信号的电路装置具有多个第一和第二传感器元件，其产生多个第一和第二电信号。 第一和第二电信号取决于照射在电路装置上的电磁辐射。 第一传感器元件被设计成以取决于包括大部分可见光的第一波长范围的电磁辐射的方式产生第一电信号。 第二传感器元件被设计成以取决于主要包括红外辐射的第二波长范围的电磁辐射的方式产生第二电信号。 第一波长范围与第二波长范围重叠，因此也包括红外辐射。
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2.发明申请METHOD FOR PRODUCING A THIN SEMICONDUCTOR CHIP COMPRISING AN INTEGRATED CIRCUIT 有权用于生产包含集成电路的薄膜半导体芯片的方法公开(公告)号：US20090096089A1
公开(公告)日：2009-04-16
申请号：US12208514
申请日：2008-09-11
IPC分类号： H01L23/52 , H01L21/761
CPC分类号： H01L21/7813 , H01L21/02002
摘要： In a method for producing a thin film chip including an integrated circuit, a semi-conductor wafer having a first surface is provided. At least one cavity is produced under a defined section of the first surface by means of porous silicon. A circuit structure is produced in the defined section. The defined wafer section is subsequently released from the semiconductor wafer by severing local web-like connections, which hold the wafer section above the cavity and on the remaining semiconductor wafer.
摘要翻译： 在制造包括集成电路的薄膜芯片的方法中，提供具有第一表面的半导体晶片。 通过多孔硅在第一表面的限定部分下产生至少一个空腔。 在定义的部分中产生电路结构。 通过切断将晶片部分保持在空腔上方和剩余的半导体晶片上的局部网状连接，随后将限定的晶片部分从半导体晶片释放。
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公开(公告)号：US20090098708A1
公开(公告)日：2009-04-16
申请号：US12208585
申请日：2008-09-11
IPC分类号： H01L21/30
CPC分类号： H01L21/7813 , H01L21/02002
摘要： In a method for producing a very thin chip including an integrated circuit, a circuit structure is produced in a defined section of a semiconductor wafer. The defined wafer section is subsequently released from the semiconductor wafer. For this purpose, the wafer section is firstly freed such that it is held only via local web-like connections on the remaining semiconductor wafer, which web-like connections are arranged at a lateral periphery of the wafer section. The web-like connections are subsequently severed.
摘要翻译： 在用于制造包括集成电路的非常薄的芯片的方法中，在半导体晶片的限定部分中产生电路结构。 随后从半导体晶片释放限定的晶片部分。 为此目的，晶片部分首先被释放，使得其仅通过剩余半导体晶片上的局部网状连接保持，该网状连接被布置在晶片部分的横向周边。 网状连接随后被切断。
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