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1.发明授权Site-specific methodology for localization and analyzing junction defects in mosfet devices 失效用于定位和分析mosfet设备中结合缺陷的位点特异性方法公开(公告)号：US06884641B2
公开(公告)日：2005-04-26
申请号：US10605258
申请日：2003-09-18
申请人： John Bruley , Terence Kane , Michael P. Tenney , Yun Yu Wang
发明人： John Bruley , Terence Kane , Michael P. Tenney , Yun Yu Wang
IPC分类号： G01R31/307 , H01L21/66 , H01L31/26
CPC分类号： H01L22/24 , G01R31/307 , H01L2924/0002 , Y10S438/902 , H01L2924/00
摘要： This invention relates to a method for electrically localizing site-specific defective sub 130 nm node MOSFET devices with shallow (less than 80 nm deep) source/drain junctions utilizing bulk silicon, or Silicon on Insulator (SOI), or strained silicon (SE), followed by optimized sample preparation steps that permits imaging, preferably high resolution electron holographic imaging, in an electron microscope to detect blocked implants, asymmetric doping, or channel length variations affecting MOSFET device performance. Detection of such defects in such shallow junctions enables further refinements in process simulation models and permits optimization of MOSFET device designs.
摘要翻译： 本发明涉及一种利用体硅或绝缘体上硅（SOI）或应变硅（SE）的具有浅（小于80nm深）源极/漏极结的电位定位缺陷子130nm节点MOSFET器件的方法， ，然后进行优化的样品制备步骤，其允许在电子显微镜中成像，优选高分辨率电子全息成像，以检测影响MOSFET器件性能的封闭植入物，不对称掺杂或沟道长度变化。 在这种浅结中的这种缺陷的检测使得能够进一步改进工艺仿真模型并允许优化MOSFET器件设计。
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公开(公告)号：US20120122280A1
公开(公告)日：2012-05-17
申请号：US13360203
申请日：2012-01-27
IPC分类号： H01L21/768
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US08368070B2
公开(公告)日：2013-02-05
申请号：US13360277
申请日：2012-01-27
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US20120126366A1
公开(公告)日：2012-05-24
申请号：US13360270
申请日：2012-01-27
IPC分类号： H01L23/525
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
摘要翻译： 反熔丝结构和在反熔丝结构内形成接触的方法。 反熔丝结构包括具有上覆金属层的基板，形成在金属层的上表面上的电介质层，以及由通过电介质层蚀刻到金属层中的接触孔内的接触材料形成的接触。 接触通孔在接触通孔的底表面处包括金属材料，并且在金属材料的顶部上包括未处理或部分处理的金属前体。
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公开(公告)号：US08367484B2
公开(公告)日：2013-02-05
申请号：US13360248
申请日：2012-01-27
IPC分类号： H01L21/82
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US08367483B2
公开(公告)日：2013-02-05
申请号：US13360203
申请日：2012-01-27
IPC分类号： H01L21/82
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
摘要翻译： 反熔丝结构和在反熔丝结构内形成接触的方法。 反熔丝结构包括具有上覆金属层的基板，形成在金属层的上表面上的电介质层，以及由通过电介质层蚀刻到金属层中的接触孔内的接触材料形成的接触。 接触通孔在接触通孔的底表面处包括金属材料，并且在金属材料的顶部上包括未处理或部分处理的金属前体。
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公开(公告)号：US08125048B2
公开(公告)日：2012-02-28
申请号：US12574926
申请日：2009-10-07
IPC分类号： H01L29/00
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
摘要翻译： 反熔丝结构和在反熔丝结构内形成接触的方法。 反熔丝结构包括具有上覆金属层的基板，形成在金属层的上表面上的电介质层，以及由通过电介质层蚀刻到金属层中的接触孔内的接触材料形成的接触。 接触通孔在接触通孔的底表面处包括金属材料，并且在金属材料的顶部上包括未处理或部分处理的金属前体。
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公开(公告)号：US20120129340A1
公开(公告)日：2012-05-24
申请号：US13360248
申请日：2012-01-27
IPC分类号： H01L21/283
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US20120126367A1
公开(公告)日：2012-05-24
申请号：US13360277
申请日：2012-01-27
IPC分类号： H01L23/525
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
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公开(公告)号：US20110079874A1
公开(公告)日：2011-04-07
申请号：US12574926
申请日：2009-10-07
IPC分类号： H01L23/525 , H01L21/768
CPC分类号： H01L23/5252 , H01L21/76823 , H01L21/76843 , H01L2924/0002 , H01L2924/00
摘要： An antifuse structure and methods of forming contacts within the antifuse structure. The antifuse structure includes a substrate having an overlying metal layer, a dielectric layer formed on an upper surface of the metal layer, and a contact formed of contact material within a contact via etched through the dielectric layer into the metal layer. The contact via includes a metal material at a bottom surface of the contact via and an untreated or partially treated metal precursor on top of the metal material.
摘要翻译： 反熔丝结构和在反熔丝结构内形成接触的方法。 反熔丝结构包括具有上覆金属层的基板，形成在金属层的上表面上的电介质层，以及由通过电介质层蚀刻到金属层中的接触孔内的接触材料形成的接触。 接触通孔在接触通孔的底表面处包括金属材料，并且在金属材料的顶部上包括未处理或部分处理的金属前体。
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