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    Robust Group III Light Emitting Diode for High Reliability in Standard Packaging Applications
    1.
    发明申请
    Robust Group III Light Emitting Diode for High Reliability in Standard Packaging Applications 有权
    强大的III类发光二极管在标准封装应用中具有高可靠性

    公开(公告)号：US20070085104A1

    公开(公告)日：2007-04-19

    申请号：US11539423

    申请日：2006-10-06

    申请人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Allen Mieczkowski

    发明人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Allen Mieczkowski

    IPC分类号： H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/44 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42

    摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.

    摘要翻译： 公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。 二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。 接触层，欧姆接触和钝化层由透射在活性异质结中产生的光的材料制成。

    Devices with crack stops
    5.
    发明授权
    Devices with crack stops 有权
    破裂装置

    公开(公告)号：US08357996B2

    公开(公告)日：2013-01-22

    申请号：US12620266

    申请日：2009-11-17

    申请人： Van Allen Mieczkowski ,  Daniel James Namishia

    发明人： Van Allen Mieczkowski ,  Daniel James Namishia

    IPC分类号： H01L23/58

    CPC分类号： H01L21/78 ,  H01L21/6836 ,  H01L23/562 ,  H01L23/585 ,  H01L2221/68327 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An apparatus that comprises a device on a substrate and a crack stop in the substrate. Methods of forming a device are also disclosed. The methods may include providing a device, such as a semiconductor device, on a substrate having a first thickness, reducing the thickness of the substrate to a second thickness, and providing a crack stop in the substrate. Reducing the thickness of the substrate may include mounting the substrate to a carrier substrate for support and then removing the carrier substrate. The crack stop may prevent a crack from reaching the device.

    摘要翻译： 一种包括衬底上的器件和衬底中的裂纹停止的装置。 还公开了形成装置的方法。 所述方法可以包括在具有第一厚度的衬底上提供诸如半导体器件的器件，将衬底的厚度减小到第二厚度，以及在衬底中提供裂纹停止。 减小衬底的厚度可以包括将衬底安装到载体衬底上用于支撑，然后移除载体衬底。 裂缝停止可以防止裂缝到达设备。

    DEVICES WITH CRACK STOPS
    6.
    发明申请
    DEVICES WITH CRACK STOPS 有权
    具有裂缝的装置

    公开(公告)号：US20110115058A1

    公开(公告)日：2011-05-19

    申请号：US12620266

    申请日：2009-11-17

    申请人： Van Allen Mieczkowski ,  Daniel James Namishia

    发明人： Van Allen Mieczkowski ,  Daniel James Namishia

    IPC分类号： H01L23/58 ,  H01L21/30

    CPC分类号： H01L21/78 ,  H01L21/6836 ,  H01L23/562 ,  H01L23/585 ,  H01L2221/68327 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

    摘要： An apparatus that comprises a device on a substrate and a crack stop in the substrate. Methods of forming a device are also disclosed. The methods may include providing a device, such as a semiconductor device, on a substrate having a first thickness, reducing the thickness of the substrate to a second thickness, and providing a crack stop in the substrate. Reducing the thickness of the substrate may include mounting the substrate to a carrier substrate for support and then removing the carrier substrate. The crack stop may prevent a crack from reaching the device.

    摘要翻译： 一种包括衬底上的器件和衬底中的裂纹停止的装置。 还公开了形成装置的方法。 所述方法可以包括在具有第一厚度的衬底上提供诸如半导体器件的器件，将衬底的厚度减小到第二厚度，以及在衬底中提供裂纹停止。 减小衬底的厚度可以包括将衬底安装到载体衬底上用于支撑，然后移除载体衬底。 裂缝停止可以防止裂缝到达设备。