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    Robust Group III Light Emitting Diode for High Reliability in Standard Packaging Applications
    1.
    发明申请
    Robust Group III Light Emitting Diode for High Reliability in Standard Packaging Applications 有权
    强大的III类发光二极管在标准封装应用中具有高可靠性

    公开(公告)号：US20070085104A1

    公开(公告)日：2007-04-19

    申请号：US11539423

    申请日：2006-10-06

    申请人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Allen Mieczkowski

    发明人： John Edmond ,  Brian Thibeault ,  David Slater ,  Gerald Negley ,  Van Allen Mieczkowski

    IPC分类号： H01L21/00 ,  H01L33/00

    CPC分类号： H01L33/44 ,  H01L33/32 ,  H01L33/40 ,  H01L33/42

    摘要： A physically robust light emitting diode is disclosed that offers high-reliability in standard packaging and that will withstand high temperature and high humidity conditions. The diode comprises a Group III nitride heterojunction diode with a p-type Group III nitride contact layer, an ohmic contact to the p-type contact layer, and a sputter-deposited silicon nitride composition passivation layer on the ohmic contact. The contact layer, the ohmic contact and the passivation layer are made of materials that transmit light generated in the active heterojunction.

    摘要翻译： 公开了一种物理上坚固的发光二极管，其在标准包装中提供高可靠性并且将承受高温和高湿度条件。 二极管包括具有p型III族氮化物接触层的III族氮化物异质结二极管，与p型接触层的欧姆接触，以及在欧姆接触上的溅射沉积的氮化硅组合物钝化层。 接触层，欧姆接触和钝化层由透射在活性异质结中产生的光的材料制成。

    Light emitting diodes including pedestals
    6.
    发明申请
    Light emitting diodes including pedestals 审中-公开
    包括基座的发光二极管

    公开(公告)号：US20060131599A1

    公开(公告)日：2006-06-22

    申请号：US11338918

    申请日：2006-01-25

    申请人： David Slater ,  Robert Glass ,  Charles Swoboda ,  Bernd Keller ,  James Ibbetson ,  Brian Thibeault ,  Eric Tarsa

    发明人： David Slater ,  Robert Glass ,  Charles Swoboda ,  Bernd Keller ,  James Ibbetson ,  Brian Thibeault ,  Eric Tarsa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32014 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. The first face of the substrate may include therein a plurality of grooves that define the plurality of triangular pedestals in the substrate. The grooves may include tapered sidewalls and/or a beveled floor. The first face of the substrate also may include therein an array of via holes. The via holes may include tapered sidewalls and/or a floor.

    摘要翻译： 发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向 第二张脸。 第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。 配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。 衬底的第一面可以包括在衬底中限定多个三角形基座的多个凹槽。 凹槽可以包括锥形侧壁和/或斜面底板。 衬底的第一面也可以包括一组通孔。 通孔可以包括锥形侧壁和/或底板。

    LIGHT EMITTING DIODES INCLUDING TRANSPARENT OXIDE LAYERS
    7.
    发明申请
    LIGHT EMITTING DIODES INCLUDING TRANSPARENT OXIDE LAYERS 有权
    发光二极管，包括透明氧化层

    公开(公告)号：US20070284604A1

    公开(公告)日：2007-12-13

    申请号：US11842350

    申请日：2007-08-21

    申请人： David Slater ,  Robert Glass ,  Charles Swoboda ,  Bernd Keller ,  James Ibbetson ,  Brian Thibeault ,  Eric Tarsa

    发明人： David Slater ,  Robert Glass ,  Charles Swoboda ,  Bernd Keller ,  James Ibbetson ,  Brian Thibeault ,  Eric Tarsa

    IPC分类号： H01L33/00

    CPC分类号： H01L33/20 ,  H01L33/10 ,  H01L33/405 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32014 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/10253 ,  H01L2924/12032 ,  H01L2924/12041 ,  H01L2924/00014 ,  H01L2924/00

    摘要： Light emitting diodes include a substrate having first and second opposing faces and that is transparent to optical radiation in a predetermined wavelength range and that is patterned to define, in cross-section, a plurality of pedestals that extend into the substrate from the first face towards the second face. A diode region on the second face is configured to emit light in the predetermined wavelength range, into the substrate upon application of voltage across the diode region. A mounting support on the diode region, opposite the substrate is configured to support the diode region, such that the light that is emitted from the diode region into the substrate, is emitted from the first face upon application of voltage across the diode region. A reflector is provided between the mounting support and the diode region, that is configured to reflect light that is emitted from the diode region back into the diode region, through the substrate that is transparent to optical radiation in the predetermined wavelength range and from the plurality of pedestals, upon application of voltage across the diode region. A layer of Indium Tin Oxide (ITO) is provided between the reflector and the diode region.

    摘要翻译： 发光二极管包括具有第一和第二相对面并且对于预定波长范围内的光辐射透明的衬底，其被图案化以在横截面中限定多个基座，其从第一面朝向 第二张脸。 第二面上的二极管区域被配置为在施加二极管区域上的电压时将预定波长范围内的光发射到衬底中。 配置在与衬底相对的二极管区域上的安装支撑件被配置为支撑二极管区域，使得从二极管区域发射到衬底中的光在施加二极管区域上的电压时从第一面发射。 在安装支撑件和二极管区域之间提供反射器，其被配置为将从二极管区域发射的光反射回二极管区域，穿过对于预定波长范围内的光辐射透明的基板和从多个 在二极管区域施加电压时， 在反射器和二极管区域之间设置一层氧化铟锡（ITO）。

    Multi element, multi color solid state LED/laser
    8.
    发明授权
    Multi element, multi color solid state LED/laser 有权
    多元素，多色固态LED /激光

    公开(公告)号：US07202506B1

    公开(公告)日：2007-04-10

    申请号：US09528262

    申请日：2000-03-17

    申请人： Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    发明人： Steven P. DenBaars ,  Eric J. Tarsa ,  Michael Mack ,  Bernd Keller ,  Brian Thibeault

    IPC分类号： H01L33/00

    CPC分类号： H01L33/30 ,  H01L25/0756 ,  H01L27/15 ,  H01L27/153 ,  H01L33/08 ,  H01L33/343 ,  H01L33/502 ,  H01L33/504 ,  H01L2924/0002 ,  H01S3/0627 ,  H01S3/0941 ,  H01S3/09415 ,  H01S3/1623 ,  H01S3/1628 ,  H01S5/0206 ,  H01S5/0287 ,  H01S5/1032 ,  H01S5/183 ,  H01S5/18361 ,  H01S5/32341 ,  H01L2924/00

    摘要： A light emitting diode (LED) grown on a substrate doped with one or more rare earth or transition element. The dopant ions absorb some or all of the light from the LED's active layer, pumping the electrons on the dopant ion to a higher energy state. The electrons are naturally drawn to their equilibrium state and they emit light at a wavelength that depends on the type of dopant ion. The invention is particularly applicable to nitride based LEDs emitting UV light and grown on a sapphire substrate doped with chromium. The chromium ions absorb the UV light, exciting the electrons on ions to a higher energy state. When they return to their equilibrium state they emit red light and some of the red light will emit from the LED's surface. The LED can also have active layers that emit green and blue and UV light, such that the LED emits green, blue, red light and UV light which combines to create white light. Alternatively, it can have one active layer and grown on a sapphire substrate doped with Cr, Ti, and Co such that the substrate absorbs the UV light and emits blue, green, and red light. The invention is also capable of providing a tunable LED over a variety of color shades. The invention is also applicable to solid state laser having one or more active layers emitting UV light with the laser grown on a sapphire substrate doped with one or more rare earth or transition elements.

    摘要翻译： 在掺杂有一种或多种稀土或过渡元素的衬底上生长的发光二极管（LED）。 掺杂剂离子吸收来自LED有源层的一些或全部光，将掺杂剂离子上的电子泵送到更高的能量状态。 电子被自然地吸收到它们的平衡状态，并且它们以取决于掺杂剂离子的类型的波长发光。 本发明特别适用于发射紫外光并在掺杂有铬的蓝宝石衬底上生长的基于氮化物的LED。 铬离子吸收紫外光，激发离子上的电子到更高的能量状态。 当它们回到它们的平衡状态时，它们发出红光，并且一些红光将从LED的表面发射。 LED还可以具有发射绿色和蓝色和紫外线的有源层，使得LED发射绿色，蓝色，红色光和UV光，其组合以产生白光。 或者，它可以具有一个活性层并在掺杂有Cr，Ti和Co的蓝宝石衬底上生长，使得衬底吸收UV光并发出蓝色，绿色和红色光。 本发明还能够在各种色调上提供可调LED。 本发明也适用于具有一个或多个发射紫外光的有源层的固体激光器，其中激光生长在掺杂有一种或多种稀土或过渡元素的蓝宝石衬底上。

    Scalable LED with improved current spreading structures
    9.
    发明授权
    Scalable LED with improved current spreading structures 有权
    可扩展的LED，具有改进的电流扩展结构

    公开(公告)号：US06885036B2

    公开(公告)日：2005-04-26

    申请号：US10606431

    申请日：2003-06-25

    申请人： Eric J. Tarsa ,  Brian Thibeault ,  James Ibbetson ,  Michael Mack

    发明人： Eric J. Tarsa ,  Brian Thibeault ,  James Ibbetson ,  Michael Mack

    IPC分类号： H01L33/14 ,  H01L33/20 ,  H01L33/38 ,  H01L33/64 ,  H01L29/22

    CPC分类号： H01L33/38 ,  H01L33/14 ,  H01L33/20 ,  H01L33/64

    摘要： An LED with improved current spreading structures that provide enhanced current injection into the LED's active layer, improving its power and luminous flux. The current spreading structures can be used in LEDs larger than conventional LEDs while maintaining the enhanced current injection. The invention is particularly applicable to LEDs having insulating substrates but can also reduce the series resistance of LEDs having conductive substrates. The improved structures comprise conductive fingers that form cooperating conductive paths that ensure that current spreads from the p-type and n-type contacts into the fingers and uniformly spreads though the oppositely doped layers. The current then spreads to the active layer to uniformly inject electrons and holes throughout the active layer, which recombine to emit light.

    摘要翻译： 一种具有改进的电流扩展结构的LED，可以增强电流注入到LED的有源层，从而提高其功率和光通量。 当前的扩展结构可以用于比常规LED更大的LED，同时保持增强的电流注入。 本发明特别适用于具有绝缘基板的LED，但也可以降低具有导电基板的LED的串联电阻。 改进的结构包括形成协调的导电路径的导电指状物，其确保电流从p型和n型触点扩散到指状物中并且通过相对掺杂的层均匀地扩散。 电流然后扩散到有源层，以在整个有源层中均匀地注入电子和空穴，其重新发光。

    High efficiency light emitters with reduced polarization-induced charges
    10.
    发明授权
    High efficiency light emitters with reduced polarization-induced charges 有权
    具有降低的极化诱发电荷的高效率发光体

    公开(公告)号：US06515313B1

    公开(公告)日：2003-02-04

    申请号：US09728788

    申请日：2000-11-28

    申请人： James Ibbetson ,  Brian Thibeault

    发明人： James Ibbetson ,  Brian Thibeault

    IPC分类号： H01L3300

    CPC分类号： H01L33/32 ,  H01L33/16

    摘要： Naturally occurring polarization-induced electric fields in a semiconductor light emitter with crystal layers grown along a polar direction are reduced, canceled or reversed to improve the emitter's operating efficiency and carrier confinement. This is accomplished by reducing differences in the material compositions of adjacent crystal layers, grading one or more layers to generate space charges and quasi-fields that oppose polarization-induced charges, incorporating various impurities into the semiconductor that ionize into a charge state opposite to the polarization induced charges, inverting the sequence of charged atomic layers, inverting the growth sequence of n- and p-type layers in the device, employing a multilayer emission system instead of a uniform active region and/or changing the in-plane lattice constant of the material.

    摘要翻译： 在极性方向生长的晶体层的半导体光发射体中自然发生的极化感应电场被减少，抵消或反转，以提高发射体的工作效率和载流子限制。 这是通过减少相邻晶体层的材料组成的差异，对一个或多个层进行分级以产生空间电荷和与偏振电荷相反的准场，将各种杂质并入半导体中，将其电离成与 偏振感应电荷，反转带电原子层的序列，反转器件中n型和p型层的生长顺序，采用多层发射系统代替均匀的有源区和/或改变面内晶格常数 材料。