公开(公告)号：US6143598A

公开(公告)日：2000-11-07

申请号：US246893

申请日：1999-02-08

申请人： John Elmslie Martin ,  Lap Chan ,  John Leonard Sudijono ,  Ting Cheong Ang

发明人： John Elmslie Martin ,  Lap Chan ,  John Leonard Sudijono ,  Ting Cheong Ang

IPC分类号： H01L21/02 ,  H01L21/314 ,  H01L21/316 ,  H01L21/8242

CPC分类号： H01L28/40 ,  H01L28/60 ,  H01L21/3144 ,  H01L21/31604 ,  H01L27/10852

摘要： A capacitor element of a semiconductor device used for high density semiconductor circuits is formed by the steps of forming the bottom plate of the capacitor, submitting the top of the bottom plate to plasma treatment in an oxidizing medium where nitrogen and oxygen are present, depositing a dielectric layer and submitting the top of the dielectric layer to plasma treatment in an oxidizing medium where nitrogen and oxygen are present. Various materials are used for the plasma treatment in an oxidizing medium where nitrogen and oxygen are present. While the present invention uses amorphous silicon as the dielectric material, plasma treatment in an oxidizing medium where nitrogen and oxygen are present can readily applied to a number of other dielectric materials. The objective in constructing capacitors for semiconductor circuits is to reduce the thickness of the dielectric material as much as possible and use a dielectric material for the dielectric which has a high dielectric constant, this increases the value of the capacitor electrical charge which can be carried by the capacitor. The objective of the present invention is to eliminate the leakage current between the plates of a capacitor so that the capacitor can maintain a high voltage between the top and the bottom plate.

摘要翻译： 用于高密度半导体电路的半导体器件的电容器元件是通过形成电容器的底板的步骤形成的，将底板的顶部在存在氮和氧的氧化介质中进行等离子体处理， 介电层，并将介电层的顶部在存在氮和氧的氧化介质中进行等离子体处理。 在存在氮和氧的氧化介质中使用各种材料进行等离子体处理。 虽然本发明使用非晶硅作为介电材料，但在存在氮和氧的氧化介质中的等离子体处理可以容易地应用于许多其它电介质材料。 用于半导体电路构造电容器的目的是尽可能地减小电介质材料的厚度，并且使用具有高介电常数的电介质的介电材料，这增加了电容器电荷的值 电容器。 本发明的目的是消除电容器板之间的漏电流，使得电容器能够在顶板和底板之间保持高电压。