专利检索 ap:("John Fitzsimmons" OR "Stephen Greco" OR "Jia Lee" OR "Stephen Gates" OR "Terry Spooner" OR "Matthew Angyal" OR "Habib Hichri" OR "Theordorus Standaert" OR "Glenn Biery") AND inv:"Theordorus Standaert" 第 1 页

1.

发明申请
Reliable low-k interconnect structure with hybrid dielectric 有权
标题翻译：具有混合电介质的可靠的低k互连结构

公开(公告)号：US20050023693A1

公开(公告)日：2005-02-03

申请号：US10901868

申请日：2004-07-29

申请人： John Fitzsimmons , Stephen Greco , Jia Lee , Stephen Gates , Terry Spooner , Matthew Angyal , Habib Hichri , Theordorus Standaert , Glenn Biery

发明人： John Fitzsimmons , Stephen Greco , Jia Lee , Stephen Gates , Terry Spooner , Matthew Angyal , Habib Hichri , Theordorus Standaert , Glenn Biery

IPC分类号： H01L21/768 , H01L23/532 , H01L21/4763

CPC分类号： H01L21/76832 , H01L21/76801 , H01L21/76807 , H01L21/76835 , H01L23/53295 , H01L2924/0002 , H01L2924/00

摘要： An advanced back-end-of-line (BEOL) interconnect structure having a hybrid dielectric is disclosed. The inter-layer dielectric (ILD) for the via level is preferably different from the ILD for the line level. In a preferred embodiment, the via-level ILD is formed of a low-k SiCOH material, and the line-level ILD is formed of a low-k polymeric thermoset material.

摘要翻译： 公开了一种具有混合电介质的高级后端（BEOL）互连结构。用于通孔电平的层间电介质（ILD）优选地不同于线路电平的ILD。在优选实施例中，通孔级ILD由低k SiCOH材料形成，并且线级ILD由低k聚合物热固性材料形成。