公开(公告)号：US06462391B1

公开(公告)日：2002-10-08

申请号：US09686885

申请日：2000-10-12

申请人： John M. Chong ,  Noel C. MacDonald

发明人： John M. Chong ,  Noel C. MacDonald

IPC分类号： H01L2982

CPC分类号： B81C1/00587 ,  B81B2201/051 ,  Y10S366/03

摘要： A microfabrication process for making enclosed, subsurface microfluidic tunnels, cavities, channels, and the like within suspended beams includes etching a single crystal silicon wafer to produce trenches defining a beam. The trench walls are oxidized, and the interior of the beam is etched through a channel via on the top of the beam to form a hollow beam with oxide sidewalls. The beam is released, and the via is then sealed to form an enclosed released channel beam.

摘要翻译： 用于在悬挂梁内制造封闭的，地下微流体通道，空腔，通道等的微加工方法包括蚀刻单晶硅晶片以产生限定光束的沟槽。 沟槽壁被氧化，并且光束的内部通过在光束顶部上的通道蚀刻而形成具有氧化物侧壁的中空光束。 梁被释放，然后将通孔密封以形成封闭释放的通道梁。

公开(公告)号：US6093330A

公开(公告)日：2000-07-25

申请号：US867060

申请日：1997-06-02

申请人： John M. Chong ,  Scott G. Adams ,  Noel C. MacDonald ,  Kevin A. Shaw

发明人： John M. Chong ,  Scott G. Adams ,  Noel C. MacDonald ,  Kevin A. Shaw

IPC分类号： B81B3/00 ,  H01L21/302

CPC分类号： B81C1/0015 ,  B81C1/00047 ,  B81C1/00071 ,  B81B2203/0338 ,  B81C2201/053 ,  B81C2203/0136

摘要： A single-mask process for fabricating enclosed, micron-scale subsurface cavities in a single crystal silicon substrate includes the steps of patterning the substrate to form vias, etching the cavities through the vias, and sealing the vias. Single cavities of any configuration may be produced, but a preferred embodiment includes closely spaced cavity pairs. The cavities may be separated by a thin membrane, or may be merged to form an enlarged merged cavity having an overhanging bar to which electrical leads may be connected. A three-mask process for fabricating enclosed cavities with electrical contacts and electrical connections is also disclosed.

摘要翻译： 用于在单晶硅衬底中制造封闭的微米级次表面空穴的单掩模工艺包括以下步骤：使衬底图案化以形成通孔，通过通孔蚀刻空腔，并密封通孔。 可以制造任何构造的单个空腔，但是优选实施例包括紧密间隔的空腔对。 空腔可以由薄膜分离，或者可以被合并以形成具有可以连接电引线的悬伸杆的扩大的合并腔。 还公开了一种用于制造具有电触点和电连接的封闭腔的三掩模工艺。

公开(公告)号：US06180536B2

公开(公告)日：2001-01-30

申请号：US09090840

申请日：1998-06-04

申请人： John M. Chong ,  Noel C. MacDonald

发明人： John M. Chong ,  Noel C. MacDonald

IPC分类号： H01L21306

CPC分类号： B81C1/00587 ,  B81B2201/051 ,  Y10S366/03

摘要： A microfabrication process for making enclosed, subsurface microfluidic tunnels, cavities, channels, and the like within suspended beams includes etching a single crystal silicon wafer to produce trenches defining a beam. The trench walls are oxidized, and the interior of the beam is etched through a channel via on the top of the beam to form a hollow beam with oxide sidewalls. The beam is released, and the via is then sealed to form an enclosed released channel beam,

摘要翻译： 用于在悬挂梁内制造封闭的，地下微流体通道，空腔，通道等的微加工方法包括蚀刻单晶硅晶片以产生限定光束的沟槽。 沟槽壁被氧化，并且梁的内部通过在梁的顶部上的通道蚀刻而形成具有氧化物侧壁的中空梁。 将光束释放，然后将通孔密封以形成封闭释放的通道光束，

公开(公告)号：US06544863B1

公开(公告)日：2003-04-08

申请号：US09934783

申请日：2001-08-21

申请人： John M. Chong ,  Paul Waldrop ,  Tim Davis ,  Scott Adams

发明人： John M. Chong ,  Paul Waldrop ,  Tim Davis ,  Scott Adams

IPC分类号： H01L2146

CPC分类号： B81C1/00619

摘要： A method for fabricating semiconductor wafers as multiple-depth structure (i.e., having portions of varying height). The method includes patterning a first substrate and bonding a second substrate to the first. This process creates a subsurface patterned layer. Portions of the second substrate may then be etched, exposing the subsurface patterned layer for selective processing. For example, the layered structure may then be repeatedly etched to produce a multiple depth structure. Or, for example, exposed portions of the first substrate may have material added to them to create multiple-depth structures. This method of fabrication provides substantial advantages over previous methods.

摘要翻译： 一种用于制造多深度结构（即具有不同高度的部分）的半导体晶片的方法。 该方法包括图案化第一衬底并将第二衬底接合到第一衬底。 该过程产生了地下图案层。 然后可以蚀刻第二衬底的部分，暴露出地下图案化层以进行选择性处理。 例如，可以重复地蚀刻层状结构以产生多个深度结构。 或者，例如，第一基板的暴露部分可以具有添加到其中的材料以产生多深度结构。 这种制造方法比以前的方法提供了显着的优点。