公开(公告)号：US20100163950A1

公开(公告)日：2010-07-01

申请号：US12492101

申请日：2009-06-25

申请人： Jon Gladish ,  Arthur Black

发明人： Jon Gladish ,  Arthur Black

IPC分类号： H01L27/06

CPC分类号： H03K17/162 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66181 ,  H01L29/7803 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/7817 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor structure includes a power transistor monolithically integrated with a RC snubber in a die. The power transistor includes body regions extending in a silicon region, gate electrodes insulated from the body region by a gate dielectric, source regions extending in the body regions, the source and the body regions being of opposite conductivity type, and a source interconnect contacting the source regions. The RC snubber comprises including snubber electrodes insulated from the silicon region by a snubber dielectric such that the snubber electrodes and the silicon region form a snubber capacitor having a predetermined value. The snubber electrodes are connected to the source interconnect in a manner so as to form a snubber resistor of a predetermined value between the snubber capacitor and the source interconnect. The snubber capacitor and the snubber resistor are configured to substantially dampen output ringing when the power transistor switches states.

摘要翻译： 半导体结构包括与芯片中的RC缓冲器单片集成的功率晶体管。 功率晶体管包括在硅区域中延伸的主体区域，通过栅极电介质与体区域绝缘​​的栅电极，在体区域中延伸的源极区域，源极和体区域具有相反的导电类型，以及源极互连件 源地区。 RC缓冲器包括通过缓冲电介质与硅区域绝缘的缓冲电极，使得缓冲电极和硅区域形成具有预定值的缓冲电容器。 缓冲电极以这样的方式连接到源互连，以在缓冲电容器和源互连之间形成预定值的缓冲电阻器。 缓冲电容器和缓冲电阻器被配置为当功率晶体管切换状态时基本上抑制输出振铃。

公开(公告)号：US08829624B2

公开(公告)日：2014-09-09

申请号：US12492101

申请日：2009-06-25

申请人： Jon Gladish ,  Arthur Black

发明人： Jon Gladish ,  Arthur Black

IPC分类号： H01L27/088 ,  H01L27/06 ,  H01L29/78 ,  H03K17/16 ,  H01L29/66 ,  H01L29/423 ,  H01L29/417 ,  H01L29/06 ,  H01L29/40

CPC分类号： H03K17/162 ,  H01L29/0696 ,  H01L29/402 ,  H01L29/407 ,  H01L29/4175 ,  H01L29/42368 ,  H01L29/4238 ,  H01L29/66181 ,  H01L29/7803 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/7817 ,  H01L29/7835 ,  H01L2924/0002 ,  H01L2924/00

摘要： In one general aspect, a semiconductor structure can include a power transistor including a body region extending in a silicon region, a gate electrode insulated from the body region by a gate dielectric, a source region extending in the body region where the source region is of opposite conductivity type from the body region, a source interconnect contacting the source region, and a backside drain. The semiconductor structure can include an RC snubber monolithically integrated with the power transistor in a die. The RC snubber can include a snubber electrode insulated from the silicon region by a snubber dielectric such that the snubber electrode and the silicon region form a snubber capacitor.

摘要翻译： 在一个一般的方面，半导体结构可以包括功率晶体管，其包括在硅区域中延伸的主体区域，通过栅极电介质与体区绝缘的栅极电极，源区域在源区域为 与身体区域相反的导电类型，与源区接触的源极互连和背面漏极。 半导体结构可以包括与芯片中的功率晶体管单片集成的RC缓冲器。 RC缓冲器可以包括通过缓冲介电体与硅区域绝缘的缓冲电极，使得缓冲电极和硅区域形成缓冲电容器。