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1.发明申请公开(公告)号：US20120164587A1
公开(公告)日：2012-06-28
申请号：US13171954
申请日：2011-06-29
IPC分类号： G03F7/20
CPC分类号： G03F7/203 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/0002 , G03F7/70375
摘要： Lithographic Method. The method fabricates complex structures and includes depositing a photoresist onto a substrate, the photoresist including a predominantly thermal band of optical absorption possibly due to the incorporation of a doping agent. A three-dimensional pattern is generated within the resist using a first wavelength of light to effect activation of a photoinitiator to produce a latently photostructured resist. Focused laser spike annealing of the photostructured resist with a second wavelength of light selected to be absorbed by the thermally absorbing band to accelerate the photoinduced reaction in the resist is provided. Three-dimensional direct writing may be performed within the resist to define features not part of the interference pattern and the resist is developed to produce the complex structure.
摘要翻译： 平版方法。 该方法制造复杂结构，并且包括在基板上沉积光致抗蚀剂，光致抗蚀剂包括主要是热吸收带的光吸收，可能是由于引入掺杂剂。 使用第一波长的光在抗蚀剂内产生三维图案以实现光引发剂的活化以产生潜在的光结晶抗蚀剂。 提供了光结构化抗蚀剂的聚焦激光尖峰退火，其中第二波长的光被选择为由吸热带吸收，以加速抗蚀剂中的光诱导反应。 可以在抗蚀剂内进行三维直接写入以限定不是干涉图案的一部分的特征，并且抗蚀剂被开发以产生复杂结构。
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2.发明授权公开(公告)号：US08465910B2
公开(公告)日：2013-06-18
申请号：US13171954
申请日：2011-06-29
IPC分类号： G03F7/26
CPC分类号： G03F7/203 , B82Y10/00 , B82Y40/00 , G03F1/20 , G03F7/0002 , G03F7/70375
摘要： Lithographic Method. The method fabricates complex structures and includes depositing a photoresist onto a substrate, the photoresist including a predominantly thermal band of optical absorption possibly due to the incorporation of a doping agent. A three-dimensional pattern is generated within the resist using a first wavelength of light to effect activation of a photoinitiator to produce a latently photostructured resist. Focused laser spike annealing of the photostructured resist with a second wavelength of light selected to be absorbed by the thermally absorbing band to accelerate the photoinduced reaction in the resist is provided. Three-dimensional direct writing may be performed within the resist to define features not part of the interference pattern and the resist is developed to produce the complex structure.
摘要翻译： 平版方法。 该方法制造复杂结构，并且包括在基板上沉积光致抗蚀剂，光致抗蚀剂包括主要是热吸收带的光吸收，可能是由于引入掺杂剂。 使用第一波长的光在抗蚀剂内产生三维图案以实现光引发剂的活化以产生潜在的光结晶抗蚀剂。 提供了光结构化抗蚀剂的聚焦激光尖峰退火，其中第二波长的光被选择为由吸热带吸收，以加速抗蚀剂中的光诱导反应。 可以在抗蚀剂内进行三维直接写入以限定不是干涉图案的一部分的特征，并且抗蚀剂被开发以产生复杂结构。
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