公开(公告)号：US06909477B1

公开(公告)日：2005-06-21

申请号：US09492802

申请日：2000-01-28

申请人： Jong Hoon Yi ,  Jeong Hyun Kim ,  Sang Hun Oh ,  Soo Mahn Kim ,  Sang Gul Lee

发明人： Jong Hoon Yi ,  Jeong Hyun Kim ,  Sang Hun Oh ,  Soo Mahn Kim ,  Sang Gul Lee

IPC分类号： G02F1/1335 ,  G02F1/1362

CPC分类号： G02F1/136209 ,  G02F2001/136222

摘要： Barrier lines are formed on a substrate to define column areas between adjacent barrier lines. A color filter is then formed using continuous ink ejection in at least one of the column areas.

公开(公告)号：US06395571B1

公开(公告)日：2002-05-28

申请号：US09665119

申请日：2000-09-20

申请人： Jong Hoon Yi ,  Sang Gul Lee

发明人： Jong Hoon Yi ,  Sang Gul Lee

IPC分类号： H01L2100

CPC分类号： H01L29/66757 ,  H01L29/78621 ,  H01L2029/7863

摘要： Fabrication of a polysilicon TFT having a lightly doped drain or offset structure. Fabrication includes forming a semiconductor layer, a gate insulating film, and a gate electrode on a substrate. Then, forming lightly doped impurity regions in the semiconductor layer on both sides of the gate electrode. Next, forming an insulating film having a thickness that gradually becomes thinner away from the gate electrode. Then, forming heavily doped impurity regions in the lightly doped impurity regions in the semiconductor layer on both sides of the gate, resulting in regions with continuously varied impurity concentrations.

摘要翻译： 具有轻掺杂漏极或偏移结构的多晶硅TFT的制造。 制造包括在基板上形成半导体层，栅极绝缘膜和栅电极。 然后，在栅极两侧的半导体层中形成轻掺杂杂质区。 接下来，形成具有从栅电极逐渐变薄的厚度的绝缘膜。 然后，在栅极两侧的半导体层中的轻掺杂杂质区域中形成重掺杂的杂质区域，导致杂质浓度连续变化的区域。

公开(公告)号：US06549252B1

公开(公告)日：2003-04-15

申请号：US09461209

申请日：1999-12-15

申请人： Sang Gul Lee ,  Jong Hoon Yi

发明人： Sang Gul Lee ,  Jong Hoon Yi

IPC分类号： G02F11335

CPC分类号： G02F1/136286 ,  G02F1/133553 ,  G02F1/1362

摘要： The present invention is directed towards TFT-LCD devices and methods to manufacture the same. The devices of the present invention includes a gate electrode structure including an active layer and agate insulator, a protective layer formed over and along the sides of the gate electrode structure, contact layers formed on sides of the gate electrode structure and on a substrate, and source and drain electrodes on the contact layers.

摘要翻译： 本发明涉及TFT-LCD装置及其制造方法。 本发明的器件包括具有有源层和玛瑙绝缘体的栅电极结构，形成在栅电极结构的上侧和后侧的保护层，形成在栅电极结构的侧面和基板上的接触层，以及 接触层上的源极和漏极。

公开(公告)号：US06242769B1

公开(公告)日：2001-06-05

申请号：US09453299

申请日：1999-12-03

申请人： Youn Gyoung Chang ,  Jeong Hyun Kim ,  Se June Kim ,  Jae Kyun Lee ,  Jong Hoon Yi

发明人： Youn Gyoung Chang ,  Jeong Hyun Kim ,  Se June Kim ,  Jae Kyun Lee ,  Jong Hoon Yi

IPC分类号： H01L31062

CPC分类号： H01L27/14678 ,  H01L29/78633

摘要： A TFT type optical detecting sensor includes a sensor TFT for generating optical current by detecting light reflected from an object, a storage capacitor for storing charges of the optical current, and a switching TFT for controlling releasing of the charges stored in the storage capacitor. The storage capacitor is made of a transparent conductive material, such that light is transmitted from a light source through the storage capacitor to the object.

摘要翻译： TFT型光检测传感器包括用于通过检测从物体反射的光产生光电流的传感器TFT，用于存储光电流的电荷的存储电容器，以及用于控制存储在存储电容器中的电荷释放的开关TFT。 存储电容器由透明导电材料制成，使得光从光源通过存储电容器传输到物体。

公开(公告)号：US06239468B1

公开(公告)日：2001-05-29

申请号：US09456389

申请日：1999-12-08

申请人： Youn Gyoung Chang ,  Jeong Hyun Kim ,  Se June Kim ,  Jae Kyun Lee ,  Jong Hoon Yi

发明人： Youn Gyoung Chang ,  Jeong Hyun Kim ,  Se June Kim ,  Jae Kyun Lee ,  Jong Hoon Yi

IPC分类号： H01L2701

CPC分类号： H01L29/78696 ,  H01L29/41733 ,  H01L29/458

摘要： A sensor TFT includes a substrate, a gate electrode formed on the substrate, a semiconductor layer patterned on the insulating layer to generate an optical current using received light, source and drain electrodes formed on the semiconductor layer, the source and drain electrodes being spaced apart from each other, and a conductive channel defined by an area between the source and drain electrodes, wherein the conductive channel is not rectangular-shaped, such that the channel width is increased for a fixed channel length.

摘要翻译： 传感器TFT包括基板，形成在基板上的栅极电极，在绝缘层上图案化的半导体层，使用接收的光产生光电流，形成在半导体层上的源极和漏极，源极和漏极间隔开 以及由源极和漏极之间的区域限定的导电沟道，其中导电沟道不是矩形的，使得沟道宽度在固定沟道长度上增加。