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    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING RECESS GATE STRUCTURE WITH VARYING RECESS WIDTH FOR INCREASED CHANNEL LENGTH
    1.
    发明申请
    METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE HAVING RECESS GATE STRUCTURE WITH VARYING RECESS WIDTH FOR INCREASED CHANNEL LENGTH 审中-公开
    具有不断增加的通道长度的变化幅度的具有闭门器结构的半导体器件的制造方法

    公开(公告)号：US20080272431A1

    公开(公告)日：2008-11-06

    申请号：US12174735

    申请日：2008-07-17

    申请人： Jong Man KIM ,  Chang Goo LEE ,  Jong Sik KIM ,  Se Ra WON

    发明人： Jong Man KIM ,  Chang Goo LEE ,  Jong Sik KIM ,  Se Ra WON

    IPC分类号： H01L29/78

    CPC分类号： H01L21/28061 ,  H01L21/30604 ,  H01L21/3065 ,  H01L21/3081 ,  H01L29/66621

    摘要： A varying-width recess gate structure having a varying-width recess formed in a semiconductor device can sufficiently increase the channel length of the transistor having a gate formed in the varying-width recess, thereby effectively reducing the current leakage and improving the refresh characteristics. In the method of manufacturing the recess gate structure, etching is performed twice or more, so as to form a gate recess having varying width in the substrate, and a gate is formed in the gate recess.

    摘要翻译： 具有形成在半导体器件中的可变宽度凹部的变宽的凹槽栅极结构可以充分增加形成在可变宽度凹部中的栅极的晶体管的沟道长度，从而有效地减小漏电流并提高刷新特性。 在制造凹槽栅结构的方法中，进行两次或更多次的蚀刻，以形成在衬底中具有变化的宽度的栅极凹槽，并且在栅极凹部中形成栅极。