公开(公告)号：US09577043B2

公开(公告)日：2017-02-21

申请号：US14826174

申请日：2015-08-13

申请人： Jongryeol Yoo ,  Hyun Jung Lee ,  Sunjung Kim ,  Seung Hun Lee ,  Eunhye Choi

发明人： Jongryeol Yoo ,  Hyun Jung Lee ,  Sunjung Kim ,  Seung Hun Lee ,  Eunhye Choi

IPC分类号： H01L29/10 ,  H01L29/165 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/088 ,  H01L21/8234

CPC分类号： H01L29/1054 ,  H01L21/823412 ,  H01L21/823814 ,  H01L27/088 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/165 ,  H01L29/7849

摘要： A semiconductor device includes a buffer layer on a semiconductor substrate including first and second regions, a first channel layer on the buffer layer of the first region, a second channel layer on the buffer layer of the second region, and a spacer layer between the second channel layer and the buffer layer. The buffer layer, the first and second channel layers, and the spacer layer are formed of semiconductor materials including germanium. A germanium concentration difference between the first and second channel layers is greater than a germanium concentration difference between the buffer layer and the second channel layer. The spacer layer has a germanium concentration gradient.

摘要翻译： 半导体器件包括在半导体衬底上的包括第一和第二区域的缓冲层，第一区域的缓冲层上的第一沟道层，第二区域的缓冲层上的第二沟道层以及第二区域之间的间隔层 通道层和缓冲层。 缓冲层，第一和第二沟道层以及间隔层由包括锗的半导体材料形成。 第一和第二沟道层之间的锗浓度差大于缓冲层和第二沟道层之间的锗浓度差。 间隔层具有锗浓度梯度。