公开(公告)号：US08686481B2

公开(公告)日：2014-04-01

申请号：US11912697

申请日：2006-04-26

申请人： Joris Pieter Valentijn Maas ,  Willem-Jan Toren ,  Hein Otto Folkerts ,  Willem Hendrik Maes ,  Willem Hoekstra ,  Daniel Wilhelmus Elisabeth Verbugt ,  Daniel Hendrik Jan Maria Hermes

发明人： Joris Pieter Valentijn Maas ,  Willem-Jan Toren ,  Hein Otto Folkerts ,  Willem Hendrik Maes ,  Willem Hoekstra ,  Daniel Wilhelmus Elisabeth Verbugt ,  Daniel Hendrik Jan Maria Hermes

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： Disclosed are embodiments of a semiconductor device comprising a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of picture elements, each picture element comprising a radiation-sensitive element coupled to MOS field effect transistors for reading the radiation-sensitive elements, wherein a semiconductor region is sunken in the surface of the body having the same conductivity type as the body and having an increased doping concentration, the semiconductor region being disposed between the radiation-sensitive elements of neighboring picture elements.

摘要翻译： 公开了包括具有半导体图像传感器的半导体本体的半导体器件的实施例，半导体图像传感器包括像素的二维矩阵，每个像素包括耦合到用于读取辐射敏感元件的MOS场效应晶体管的辐射敏感元件，其中 半导体区域在主体的表面凹陷，具有与主体相同的导电类型并且具有增加的掺杂浓度，半导体区域设置在相邻像素的辐射敏感元件之间。

公开(公告)号：US20080197386A1

公开(公告)日：2008-08-21

申请号：US11912697

申请日：2006-04-26

申请人： Joris Pieter Valentijn Maas ,  Willem-Jan Toren ,  Hein Otto Folkerts ,  Willem Hendrik Maes ,  Willem Hoekstra ,  Daniel Wilhelmus Elisabeth Verbugt ,  Daniel Hendrik Jan Maria Hermes

发明人： Joris Pieter Valentijn Maas ,  Willem-Jan Toren ,  Hein Otto Folkerts ,  Willem Hendrik Maes ,  Willem Hoekstra ,  Daniel Wilhelmus Elisabeth Verbugt ,  Daniel Hendrik Jan Maria Hermes

IPC分类号： H01L27/146 ,  H01L21/8238

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： The invention relates to a semiconductor device with a semiconductor body (12) with an image sensor comprising a two-dimensional matrix of pixels (1) each comprising a radiation-sensitive element (2) with a charge accumulating semiconductor region (2A) and coupled to a number of MOS field effect transistors (3), in which in the semiconductor body (12) an isolation region (4) is sunken for the separation of neighboring pixels (1) underneath which a further semiconductor region (5) with an enlarged doping concentration is formed. According to the invention the further semiconductor region (5) is sunken in the surface of the semiconductor body (12) and wider than the isolation region (4). Preferably the isolation region (4) is merely located there where a radiation sensitive element (2) borders on the MOS transistors (3) of a neighboring pixel (1) and there where two neighboring pixels (1) border on each other with their radiation sensitive elements (2) another sunken semiconductor region (6) with an enlarged doping concentration is located. Such a device (10) has a low leakage current and a large radiation sensitivity and charge storage capacity.

摘要翻译： 本发明涉及具有半导体本体（12）的半导体器件，该半导体器件（12）具有图像传感器，该图像传感器包括像素（2）的二维矩阵，每个像素阵列包括具有电荷累积半导体区域（2A）的辐射敏感元件（2） 耦合到多个MOS场效应晶体管（3），其中在半导体主体（12）中，隔离区域（4）凹陷以分离其下方的相邻像素（1），其中另外的半导体区域（5）具有 形成增大的掺杂浓度。 根据本发明，另外的半导体区域（5）在半导体本体（12）的表面凹陷并且比隔离区域（4）更宽。 优选地，隔离区域（4）仅位于辐射敏感元件（2）与相邻像素（1）的MOS晶体管（3）相邻并且其中两个相邻像素（1）以其辐射彼此相接的位置 敏感元件（2）定位了具有增大的掺杂浓度的另一凹陷半导体区域（6）。 这种装置（10）具有低泄漏电流和大的辐射灵敏度和电荷存储容量。