公开(公告)号：US08686481B2

公开(公告)日：2014-04-01

申请号：US11912697

申请日：2006-04-26

申请人： Joris Pieter Valentijn Maas ,  Willem-Jan Toren ,  Hein Otto Folkerts ,  Willem Hendrik Maes ,  Willem Hoekstra ,  Daniel Wilhelmus Elisabeth Verbugt ,  Daniel Hendrik Jan Maria Hermes

发明人： Joris Pieter Valentijn Maas ,  Willem-Jan Toren ,  Hein Otto Folkerts ,  Willem Hendrik Maes ,  Willem Hoekstra ,  Daniel Wilhelmus Elisabeth Verbugt ,  Daniel Hendrik Jan Maria Hermes

IPC分类号： H01L27/146

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： Disclosed are embodiments of a semiconductor device comprising a semiconductor body with a semiconductor image sensor comprising a two-dimensional matrix of picture elements, each picture element comprising a radiation-sensitive element coupled to MOS field effect transistors for reading the radiation-sensitive elements, wherein a semiconductor region is sunken in the surface of the body having the same conductivity type as the body and having an increased doping concentration, the semiconductor region being disposed between the radiation-sensitive elements of neighboring picture elements.

摘要翻译： 公开了包括具有半导体图像传感器的半导体本体的半导体器件的实施例，半导体图像传感器包括像素的二维矩阵，每个像素包括耦合到用于读取辐射敏感元件的MOS场效应晶体管的辐射敏感元件，其中 半导体区域在主体的表面凹陷，具有与主体相同的导电类型并且具有增加的掺杂浓度，半导体区域设置在相邻像素的辐射敏感元件之间。

公开(公告)号：US20120133811A1

公开(公告)日：2012-05-31

申请号：US13373717

申请日：2011-11-28

申请人： Willem Hendrik Maes ,  Daniel Wilhelmus Elisabeth Verbugt ,  Matthias Egbert Sonder ,  Adrianus Johannes Mierop

发明人： Willem Hendrik Maes ,  Daniel Wilhelmus Elisabeth Verbugt ,  Matthias Egbert Sonder ,  Adrianus Johannes Mierop

IPC分类号： H04N5/335

CPC分类号： H04N5/3575 ,  H04N5/37452

摘要： A method of scanning pixels, each pixel including a photodiode and a sense node formed in the substrate, including a transfer gate coupled between the photodiode and the sense node, and including a memory gate coupled between the photodiode and the transfer gate. The method switches a control signal, connected to a memory gate electrode of all pixels, alternately between a first voltage and a second voltage that is intermediate between the first voltage and a substrate voltage. The first voltage transfers all photo charge in each photodiode into the respective memory gate. The second voltage both (1) holds all photo charge already transferred into the memory gate and (2) blocks further transfer of photo charges into each memory gate. The method further includes reading out photo charge from the memory gate on a row-by-row basis while the control signal is at the second voltage.

摘要翻译： 一种扫描像素的方法，每个像素包括光电二极管和形成在衬底中的感测节点，包括耦合在光电二极管和感测节点之间的传输门，并且包括耦合在光电二极管和传输门之间的存储栅。 该方法在与第一电压和基板电压之间的第一电压和第二电压之间交替地切换连接到所有像素的存储栅电极的控制信号。 第一个电压将每个光电二极管中的所有光电荷传输到相应的存储器门。 第二电压（1）保持已经传送到存储器栅极的所有光电荷，（2）阻止光电荷进一步传输到每个存储器栅极。 该方法还包括在控制信号处于第二电压的同时逐行读出存储器栅极的光电荷。

公开(公告)号：US08605181B2

公开(公告)日：2013-12-10

申请号：US13373717

申请日：2011-11-28

申请人： Willem Hendrik Maes ,  Daniel Wilhelmus Elisabeth Verbugt ,  Matthias Egbert Sonder ,  Adrianus Johannes Mierop

发明人： Willem Hendrik Maes ,  Daniel Wilhelmus Elisabeth Verbugt ,  Matthias Egbert Sonder ,  Adrianus Johannes Mierop

IPC分类号： H04N5/335

CPC分类号： H04N5/3575 ,  H04N5/37452

摘要： A method of scanning pixels, each pixel including a photodiode and a sense node formed in the substrate, including a transfer gate coupled between the photodiode and the sense node, and including a memory gate coupled between the photodiode and the transfer gate. The method switches a control signal, connected to a memory gate electrode of all pixels, alternately between a first voltage and a second voltage that is intermediate between the first voltage and a substrate voltage. The first voltage transfers all photo charge in each photodiode into the respective memory gate. The second voltage both (1) holds all photo charge already transferred into the memory gate and (2) blocks further transfer of photo charges into each memory gate. The method further includes reading out photo charge from the memory gate on a row-by-row basis while the control signal is at the second voltage.

摘要翻译： 一种扫描像素的方法，每个像素包括光电二极管和形成在衬底中的感测节点，包括耦合在光电二极管和感测节点之间的传输门，并且包括耦合在光电二极管和传输门之间的存储栅。 该方法在与第一电压和基板电压之间的第一电压和第二电压之间交替地切换连接到所有像素的存储栅电极的控制信号。 第一个电压将每个光电二极管中的所有光电荷传输到相应的存储器门。 第二电压（1）保持已经传送到存储器栅极的所有光电荷，（2）阻止光电荷进一步传输到每个存储器栅极。 该方法还包括在控制信号处于第二电压的同时逐行读出存储器栅极的光电荷。

公开(公告)号：US20080265348A1

公开(公告)日：2008-10-30

申请号：US11570248

申请日：2005-05-12

申请人： Joris Maas ,  Leendert De Bruin ,  Daniel Wilhelmus Elisabeth Verbugt ,  Nicolaas Johannes Anthonius Van Veen ,  Eric Cornelis Egbertus Van Grunsven ,  Gerardus Lubertus Jacobus Reuvers ,  Erik Harold Groot

发明人： Joris Maas ,  Leendert De Bruin ,  Daniel Wilhelmus Elisabeth Verbugt ,  Nicolaas Johannes Anthonius Van Veen ,  Eric Cornelis Egbertus Van Grunsven ,  Gerardus Lubertus Jacobus Reuvers ,  Erik Harold Groot

IPC分类号： H01L31/0232 ,  H01L21/86

CPC分类号： H01L31/02162 ,  H01L27/14621 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14685 ,  H01L31/02327

摘要： A method of manufacturing a back-side (14) illuminated image sensor (1) is disclosed, comprising the steps of: starting with a wafer (2) having a first (3) and a second surface (4), providing light sensitive pixel regions (5) extending into the wafer (2) from the first surface (3), securing the wafer (2) onto a protective substrate (7) such that the first surface (3) faces the protective substrate, the wafer comprising a substrate of a first material (8) with an optical transparent layer (9) and a layer of semiconductor material (10), wherein the substrate (8) is selectively removed from the layer of semiconductor material by using the optical transparent layer (9) as stopping layer. For back-side illuminated image sensors, light has to transmit through the semiconductor layer and enter into the light sensitive pixel regions (5). In order to reduce absorption losses, it is very advantageous that the semiconductor layer (10) can be made relatively thin with a good uniformity. Because of the reduced thickness of the semiconductor layer, more light can enter into the light sensitive regions, resulting in an improved efficiency of the image sensor.

摘要翻译： 公开了一种制造背面（14）照明图像传感器（1）的方法，包括以下步骤：从具有第一（3）和第二表面（4）的晶片（2）开始，提供光敏像素 从所述第一表面（3）延伸到所述晶片（2）中的区域（5），将所述晶片（2）固定到保护衬底（7）上，使得所述第一表面（3）面向所述保护衬底，所述晶片包括衬底 具有光学透明层（9）和半导体材料层（10）的第一材料（8），其中通过使用光学透明层（9）作为选择性地从半导体材料层中去除基板（8） 停止层。 对于背面照明图像传感器，光必须透过半导体层并进入光敏像素区域（5）。 为了减少吸收损失，非常有利的是，半导体层（10）可以制成相对较薄并具有良好的均匀性。 由于半导体层的厚度减小，更多的光可以进入光敏区域，从而提高了图像传感器的效率。

公开(公告)号：US07551215B2

公开(公告)日：2009-06-23

申请号：US11374963

申请日：2006-03-15

申请人： Alouisius Wilhelmus Marinus Korthout ,  Daniel Wilhelmus Elisabeth Verbugt

发明人： Alouisius Wilhelmus Marinus Korthout ,  Daniel Wilhelmus Elisabeth Verbugt

IPC分类号： H04N3/14 ,  H04N5/335 ,  H05G1/64

CPC分类号： H04N5/3745 ,  H01L27/14658 ,  H04N5/32 ,  H04N5/367

摘要： A CMOS-based sensor apparatus comprises an array of sensor cells that are interconnected by a first set of vertical driver lines to a selective driver facility and by a second set of horizontal sensing lines to a sensing facility for sensing respectively sensed amounts of radiation.In particular, the sensor cells through being appropriately spaced in at least either row or column direction, comprise a redundancy facility that is selectively activatable for isolating an interconnect short on the basis of externally applied control actuation.

摘要翻译： 基于CMOS的传感器装置包括由第一组垂直驱动器线路连接到选择性驱动器设备的传感器单元的阵列，以及通过第二组水平感测线路连接到用于感测分别感测的辐射量的感测设备。 特别地，传感器单元通过在至少任一行或列方向上适当地间隔，包括可选择性地激活的冗余设施，用于基于外部施加的控制致动隔离互连短路。

公开(公告)号：US20080197386A1

公开(公告)日：2008-08-21

申请号：US11912697

申请日：2006-04-26

申请人： Joris Pieter Valentijn Maas ,  Willem-Jan Toren ,  Hein Otto Folkerts ,  Willem Hendrik Maes ,  Willem Hoekstra ,  Daniel Wilhelmus Elisabeth Verbugt ,  Daniel Hendrik Jan Maria Hermes

发明人： Joris Pieter Valentijn Maas ,  Willem-Jan Toren ,  Hein Otto Folkerts ,  Willem Hendrik Maes ,  Willem Hoekstra ,  Daniel Wilhelmus Elisabeth Verbugt ,  Daniel Hendrik Jan Maria Hermes

IPC分类号： H01L27/146 ,  H01L21/8238

CPC分类号： H01L27/1463 ,  H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： The invention relates to a semiconductor device with a semiconductor body (12) with an image sensor comprising a two-dimensional matrix of pixels (1) each comprising a radiation-sensitive element (2) with a charge accumulating semiconductor region (2A) and coupled to a number of MOS field effect transistors (3), in which in the semiconductor body (12) an isolation region (4) is sunken for the separation of neighboring pixels (1) underneath which a further semiconductor region (5) with an enlarged doping concentration is formed. According to the invention the further semiconductor region (5) is sunken in the surface of the semiconductor body (12) and wider than the isolation region (4). Preferably the isolation region (4) is merely located there where a radiation sensitive element (2) borders on the MOS transistors (3) of a neighboring pixel (1) and there where two neighboring pixels (1) border on each other with their radiation sensitive elements (2) another sunken semiconductor region (6) with an enlarged doping concentration is located. Such a device (10) has a low leakage current and a large radiation sensitivity and charge storage capacity.

摘要翻译： 本发明涉及具有半导体本体（12）的半导体器件，该半导体器件（12）具有图像传感器，该图像传感器包括像素（2）的二维矩阵，每个像素阵列包括具有电荷累积半导体区域（2A）的辐射敏感元件（2） 耦合到多个MOS场效应晶体管（3），其中在半导体主体（12）中，隔离区域（4）凹陷以分离其下方的相邻像素（1），其中另外的半导体区域（5）具有 形成增大的掺杂浓度。 根据本发明，另外的半导体区域（5）在半导体本体（12）的表面凹陷并且比隔离区域（4）更宽。 优选地，隔离区域（4）仅位于辐射敏感元件（2）与相邻像素（1）的MOS晶体管（3）相邻并且其中两个相邻像素（1）以其辐射彼此相接的位置 敏感元件（2）定位了具有增大的掺杂浓度的另一凹陷半导体区域（6）。 这种装置（10）具有低泄漏电流和大的辐射灵敏度和电荷存储容量。

公开(公告)号：US20080113276A1

公开(公告)日：2008-05-15

申请号：US11598792

申请日：2006-11-14

申请人： Daniel Wilhelmus Elisabeth Verbugt

发明人： Daniel Wilhelmus Elisabeth Verbugt

IPC分类号： G03F1/00

CPC分类号： G03F1/00 ,  G03F1/50

摘要： A method for joining a plurality of reticles is used for producing a semiconductor layout pattern, so that the reticles will collectively map a circuit arrangement on a semiconductor substrate. A plurality of matching patterns is provided that are each geometrically linked to a respective particular reticle and through detecting pairwise correspondence among the matching patterns likewise correspondence among the associated reticles is ascertained.In particular, the method has bulk sub-reticles and peripheral sub-reticles, and a first matching pattern associates to a peripheral sub-reticle that abuts a bulk sub-reticle and a second matching pattern to the bulk sub-reticle at such distance therefrom that fitting of the peripheral sub-reticle between the second matching pattern and the bulk sub-reticle allows matching of the first and second matching patterns. The bulk sub-reticles are used to constitute an array of sub-reticles.

摘要翻译： 用于连接多个光罩的方法用于制造半导体布局图案，使得光罩将共同映射半导体衬底上的电路布置。 提供多个匹配图案，每个匹配图案各自几何地连接到相应的特定掩模版，并且通过检测匹配图案之间的成对对应关系，同时确定相关联的掩模版之间的对应关系。 特别地，该方法具有大块子标线片和周边子标线，并且第一匹配图案与外围子标线相关联，其外围子标线片以与之相距的距离与批量子标线片和第二匹配图案抵接到大块子标线片 第二匹配图案和大块子标线之间的外围子标线的拟合允许匹配第一和第二匹配图案。 大块子标线用于构成子标线阵列。

公开(公告)号：US06656760B2

公开(公告)日：2003-12-02

申请号：US09803336

申请日：2001-03-09

申请人： Jurriaan Schmitz ,  Edwin Roks ,  Daniel Wilhelmus Elisabeth Verbugt

发明人： Jurriaan Schmitz ,  Edwin Roks ,  Daniel Wilhelmus Elisabeth Verbugt

IPC分类号： H01L2100

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14643

摘要： A detector and a camera system for electromagnetic radiation being integrated in a solid state substrate are disclosed. Said substrate comprises a first region of a first conductivity and a second region of a second conductivity, said first region being adjacent to said second region, and said first and second region forming a detection junction, at least part of said junction being substantially orthogonal with respect to the plane of the surface of the substrate above said detection junction. The camera system comprises a configuration of pixels in an imaging sensor being integrated in a solid state substrate, essentially each of the pixels comprising a region of a first conductivity type being at least partly surrounded by a region of a second conductivity type, thereby forming a junction region, and wherein the region of the first conductivity type includes at least one contact area. The camera system further comprises means for collecting charge carriers being generated by the radiation impinging on said substrate at least in said region of said first conductivity type and in said junction region, in said contact area.

摘要翻译： 公开了一种用于电磁辐射的检测器和照相机系统集成在固态衬底中。 所述衬底包括第一导电性的第一区域和第二导电性的第二区域，所述第一区域与所述第二区域相邻，所述第一和第二区域形成检测结，所述接合区的至少一部分基本上与 相对于所述检测结上方的衬底的表面的平面。 相机系统包括集成在固态基板中的成像传感器中的像素的配置，基本上每个像素包括第一导电类型的区域，至少部分地被第二导电类型的区域包围，从而形成 并且其中所述第一导电类型的区域包括至少一个接触区域。 照相机系统还包括用于收集至少在所述第一导电类型的所述区域中和在所述接合区域中的所述接合区域中的照射在所述衬底上的辐射产生的电荷载体的装置。

公开(公告)号：US07790336B2

公开(公告)日：2010-09-07

申请号：US11598792

申请日：2006-11-14

申请人： Daniel Wilhelmus Elisabeth Verbugt

发明人： Daniel Wilhelmus Elisabeth Verbugt

IPC分类号： G03F1/00

CPC分类号： G03F1/00 ,  G03F1/50

摘要： A method for joining a plurality of reticles is used for producing a semiconductor layout pattern, so that the reticles will collectively map a circuit arrangement on a semiconductor substrate. A plurality of matching patterns is provided that are each geometrically linked to a respective particular reticle and through detecting pairwise correspondence among the matching patterns likewise correspondence among the associated reticles is ascertained.In particular, the method has bulk sub-reticles and peripheral sub-reticles, and a first matching pattern associates to a peripheral sub-reticle that abuts a bulk sub-reticle and a second matching pattern to the bulk sub-reticle at such distance therefrom that fitting of the peripheral sub-reticle between the second matching pattern and the bulk sub-reticle allows matching of the first and second matching patterns. The bulk sub-reticles are used to constitute an array of sub-reticles.

摘要翻译： 用于连接多个光罩的方法用于制造半导体布局图案，使得光罩将共同映射半导体衬底上的电路布置。 提供多个匹配图案，每个匹配图案各自几何地连接到相应的特定掩模版，并且通过检测匹配图案之间的成对对应关系，同时确定相关联的掩模版之间的对应关系。 特别地，该方法具有大块子标线片和周边子标线，并且第一匹配图案与外围子标线相关联，其外围子标线片以与之相距的距离与批量子标线片和第二匹配图案抵接到大块子标线片 第二匹配图案和大块子标线之间的外围子标线的拟合允许匹配第一和第二匹配图案。 大块子标线用于构成子标线阵列。

公开(公告)号：US07663115B2

公开(公告)日：2010-02-16

申请号：US12152813

申请日：2008-05-16

申请人： Alouisius Wilhelmus Marinus Korthout ,  Daniel Wilhelmus Elisabeth Verbugt ,  Adrianus Johannes Mierop ,  Willem Hendrik Maes

发明人： Alouisius Wilhelmus Marinus Korthout ,  Daniel Wilhelmus Elisabeth Verbugt ,  Adrianus Johannes Mierop ,  Willem Hendrik Maes

IPC分类号： H01L27/146

CPC分类号： G01T1/2928 ,  H01L27/14658

摘要： The invention relates to a semiconductor device with a semiconductor body comprising a CMOS image sensor with an active region having viewed in projection first sides and second sides perpendicular to the first sides said active region comprising a matrix of active pixels arranged in rows and columns, each pixel having a photosensitive region, the device further comprising a plurality of circuit elements for operating the pixel in the image forming process, the plurality of circuit elements comprising a first set of circuit elements for read-out of the columns and a second set of circuit elements for controlling the rows.According to the invention a first part of the plurality of circuit elements is positioned outside the matrix along one of the first sides and a second part of the plurality of circuit elements is positioned within the matrix of active pixels remote from the second sides. Preferably the first part elements comprises the read-out circuitry of the columns and the second part elements comprises the control circuitry of the rows, the latter preferably being distributed over a number of centrally positioned columns. A device according to the present invention is very suitable for X-ray medical imaging.

摘要翻译： 本发明涉及具有半导体本体的半导体器件，该半导体器件包括具有在投影第一侧观察的有源区域的CMOS图像传感器，以及垂直于第一侧面的第二侧面，所述有源区域包括排列成行和列的有源像素矩阵， 像素具有感光区域，该装置还包括用于在图像形成过程中操作像素的多个电路元件，所述多个电路元件包括用于读出列的第一组电路元件和第二组电路 用于控制行的元素。 根据本发明，多个电路元件的第一部分沿着第一侧中的一个位于矩阵的外部，并且多个电路元件的第二部分位于远离第二侧的有源像素的矩阵内。 优选地，第一部分元件包括列的读出电路，并且第二部分元件包括行的控制电路，后者优选地分布在多个居中定位的列上。 根据本发明的装置非常适合于X射线医学成像。