公开(公告)号：US5879572A

公开(公告)日：1999-03-09

申请号：US751350

申请日：1996-11-19

申请人： Joseph Keith Folsom ,  Johnna Lee Haller ,  Dan Wesley Chilcott

发明人： Joseph Keith Folsom ,  Johnna Lee Haller ,  Dan Wesley Chilcott

IPC分类号： H01L21/306 ,  H01L21/312 ,  H01L21/3065 ,  H01L21/308 ,  C23F1/02

CPC分类号： B81C1/00246 ,  H01L21/30604 ,  B81C2203/0735 ,  H01L21/3122 ,  Y10S438/942 ,  Y10S438/97 ,  Y10S438/976

摘要： A process for bulk micromachining a silicon wafer to form a silicon micromachined structure. The process involves the application of a protective film on one or more surfaces of the silicon wafer to protect metallization and circuitry on the wafer during the bulk micromachining process, during which a wet chemical etchant is employed to remove bulk silicon from a surface of the silicon wafer. The protective film is divinylsiloxane bisbenzocyclobutene (BCB), which has been found to be highly resistant to a wide variety of wet chemical etchants, and retains such resistant at elevated temperatures commonly preferred for bulk silicon etching. The degree to which this material is cured prior to etching is advantageously tailored to promote its resistance to the etchant and promote its adhesion to the silicon wafer.

摘要翻译： 一种用于大量微加工硅晶片以形成硅微加工结构的方法。 该方法涉及在硅晶片的一个或多个表面上施加保护膜，以在体微加工过程中保护晶片上的金属化和电路，在此期间使用湿化学蚀刻剂从硅表面去除体硅 晶圆。 保护膜是二乙烯基硅氧烷双苯并环丁烯（BCB），其被发现对各种湿化学蚀刻剂具有高度抗性，并且在体硅蚀刻通常优选的高温下保持这种耐受性。 该材料在蚀刻之前固化的程度有利地被定制以促进其对蚀刻剂的抗性并促进其对硅晶片的粘附。