公开(公告)号：US20120176128A1

公开(公告)日：2012-07-12

申请号：US13004365

申请日：2011-01-11

申请人： Joseph SEEGER ,  Chiung C. LO ,  Baris CAGDASER ,  Derek SHAEFFER

发明人： Joseph SEEGER ,  Chiung C. LO ,  Baris CAGDASER ,  Derek SHAEFFER

IPC分类号： G01R33/028 ,  G01R33/02

CPC分类号： G01R33/038 ,  G01R33/0286

摘要： A micromachined magnetic field sensor comprising is disclosed. The micromachined magnetic field comprises a substrate; a drive subsystem, the drive subsystem comprises a plurality of beams, and at least one anchor connected to the substrate; a mechanism for providing an electrical current through the drive subsystem along a first axis; and Lorentz force acting on the drive subsystem along a second axis in response to a magnetic field along a third axis. The micromachined magnetic field sensor also includes a sense subsystem, the sense subsystem comprises a plurality of beams, and at least one anchor connected to the substrate; wherein a portion of the sense subsystem moves along a fourth axis; a coupling spring between the drive subsystem and the sense subsystem which causes motion of the sense subsystem in response to the magnetic field; and a position transducer to detect the motion of the sense subsystem.

摘要翻译： 公开了一种微加工磁场传感器。 微加工磁场包括基片; 驱动子系统，所述驱动子系统包括多个梁，以及连接到所述基板的至少一个锚固件; 用于沿着第一轴线提供穿过所述驱动子系统的电流的机构; 以及响应于沿着第三轴的磁场沿第二轴作用在驱动子系统上的洛伦兹力。 微加工磁场传感器还包括感测子系统，感测子系统包括多个光束，以及至少一个连接到衬底的锚; 其中所述感测子系统的一部分沿着第四轴线移动; 驱动子系统和感测子系统之间的耦合弹簧，其引起感测子系统响应于磁场的运动; 以及用于检测感测子系统的运动的位置传感器。

公开(公告)号：US20120086446A1

公开(公告)日：2012-04-12

申请号：US12979960

申请日：2010-12-28

申请人： Derek SHAEFFER ,  Baris CAGDASER ,  Chiung C. LO ,  Joseph SEEGER

发明人： Derek SHAEFFER ,  Baris CAGDASER ,  Chiung C. LO ,  Joseph SEEGER

IPC分类号： G01R33/02 ,  H05K3/30 ,  H03H9/02

CPC分类号： G01R33/0286 ,  H03H3/0073

摘要： An integrated MEMS device is disclosed. The system comprises a MEMS resonator; and a MEMS device coupled to a MEMS resonator. The MEMS resonator and MEMS device are fabricated on a common substrate so that certain characteristics of the MEM resonator and MEMS device track each other as operating conditions vary.

摘要翻译： 公开了集成的MEMS器件。 该系统包括MEMS谐振器; 以及耦合到MEMS谐振器的MEMS器件。 MEMS谐振器和MEMS器件制造在公共衬底上，使得MEM谐振器和MEMS器件的某些特性在操作条件变化时彼此跟踪。

公开(公告)号：US20120176129A1

公开(公告)日：2012-07-12

申请号：US13004383

申请日：2011-01-11

申请人： Joseph SEEGER ,  Chiung C. LO ,  Baris CAGDASER ,  Derek SHAEFFER

发明人： Joseph SEEGER ,  Chiung C. LO ,  Baris CAGDASER ,  Derek SHAEFFER

IPC分类号： G01R33/02

CPC分类号： G01R33/038 ,  G01R33/0286

摘要： A micromachined magnetic field sensor is disclosed. The micromachined magnetic field sensor comprises a substrate; and a drive subsystem partially supported by the substrate with a plurality of beams, and at least one anchor; a mechanism for providing an electrical current through the drive subsystem along a first axis; and Lorentz force acting on the drive subsystem along a second axis in response to a magnetic field vector along a third axis. The micromachined magnetic field sensor also includes a position transducer to detect the motion of the drive subsystem and an electrostatic offset cancellation mechanism coupled to the drive subsystem.

摘要翻译： 公开了一种微加工磁场传感器。 微加工磁场传感器包括基板; 以及驱动子系统，其由具有多个梁的所述衬底部分地支撑，以及至少一个锚; 用于沿着第一轴线提供穿过所述驱动子系统的电流的机构; 以及响应于沿着第三轴的磁场矢量沿第二轴作用在驱动子系统上的洛伦兹力。 微加工磁场传感器还包括位置传感器，用于检测驱动子系统的运动和耦合到驱动子系统的静电偏移消除机构。

公开(公告)号：US20120242400A1

公开(公告)日：2012-09-27

申请号：US13071374

申请日：2011-03-24

申请人： Derek SHAEFFER ,  Baris CAGDASER ,  Joseph SEEGER

发明人： Derek SHAEFFER ,  Baris CAGDASER ,  Joseph SEEGER

IPC分类号： G05F1/10 ,  H01L29/06

CPC分类号： H01L27/092 ,  B81B7/008 ,  B81B2207/015 ,  H01L21/823892

摘要： A high-voltage MEMS system compatible with low-voltage semiconductor process technology is disclosed. The system comprises a MEMS device coupled to a high-voltage bias generator employing an extended-voltage isolation residing in a semiconductor technology substrate. The system avoids the use of high-voltage transistors so that special high-voltage processing steps are not required of the semiconductor technology, thereby reducing process cost and complexity. MEMS testing capability is addressed with a self-test circuit allowing modulation of the bias voltage and current so that a need for external high-voltage connections and associated electro-static discharge protection circuitry are also avoided.

摘要翻译： 公开了一种兼容低压半导体工艺技术的高压MEMS系统。 该系统包括耦合到高电压偏置发生器的MEMS器件，其采用驻留在半导体技术衬底中的扩展电压隔离。 该系统避免使用高压晶体管，因此不需要半导体技术的特殊高压处理步骤，从而降低工艺成本和复杂性。 利用允许调制偏置电压和电流的自检电路解决MEMS测试能力，从而也避免了外部高压连接和相关静电放电保护电路的需要。