摘要:
A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the device thickness. In particular, the device thickness has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.
摘要:
A monolithic bulk acoustic wave (BAW) duplexer, and a method for fabricating same, the duplexer having a, transmitter section as a first component filter and a receiver section as a second component filter, both component filters fabricated on a single substrate and both including at least one shunt BAW resonator and one series BAW resonator, each BAW resonator including a resonator section atop an isolation structure provided so as to separate the resonator section from the substrate, including: a patterned bottom electrode material for use as the bottom electrode of each of the resonators of the duplexer; a patterned piezoelectric material for use as the piezolayer of each of the resonators of the duplexer; a patterned top electrode material for use as the top electrode of each of the resonators of the duplexer; a tuning layer for the shunt resonator of each of the two component duplexer filters; and a tuning layer for both the series and shunt resonators of one of the two component duplexer filters. In some applications, each isolation structure is an acoustic mirror. Also in some applications, the duplexer further includes at least one planar spiral inductor provided in the course of depositing one or another layer of material in building up the duplexer, the planar spiral inductor having coils spiraling outward substantially in a plane from an innermost coil to an outermost coil.
摘要:
A method and system for tuning a bulk acoustic wave device at wafer level by reducing the thickness non-uniformity of the topmost surface of the device using a chemical vapor deposition process. A light beam is used to enhance the deposition of material on the topmost surface at one local location at a time. Alternatively, an electrode is used to produce plasma for locally enhancing the vapor deposition process. A moving mechanism is used to move the light beam or the electrode to different locations for reducing the thickness non-uniformity until the resonance frequency of the device falls within specification.
摘要:
A method and system for tuning a bulk acoustic wave device at wafer level, wherein the thickness of topmost layer of the device is non-uniform. The thickness non-uniformity causes the resonant frequency of the device to vary from one location to another location of the topmost layer. A laser beam, operatively connected to a beam moving mechanism, is used to locally trim the topmost layer, one location at a time.
摘要:
A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the thickness of the device. In particular, the thickness of the device has a non-uniformity profile across the device surface. A mask having a thickness non-uniformity profile based partly on the thickness non-uniformity profile of the device surface is provided on the device surface for etching. A dry etching method is used to remove part of the mask to expose the underlying device surface and further removed the exposed device surface until the thickness non-uniformity of the device surface falls within tolerance of the device.
摘要:
A front-end circuit for a wireless communication unit includes at least two antenna feeds. At least one of the antennas is coupled to an antenna switch. The circuit comprises filters and duplexers and is prepared to operate a number of FDD frequency bands. Each FDD band comprises an Rx band for receive signals and a Tx band for transmit signals. The circuit provides a single band operation mode for each frequency band and aggregated band operation modes. In an aggregated band operation mode Rx signals can be received in two different frequency bands at the same time as well as Tx signals can be transmitted in at least one of the two different frequency bands. In addition, TDD bands as well as GSM bands are covered.
摘要:
A dual-channel passband filtering system having a first, second and third balanced ports for connecting, respectively, to a first transceiver, an antenna and a second transceiver. A first lattice-type passband filter is connected between the first and the second port, and a second lattice-type passband filter is connected between the second and the third port. A phase shifter is used to match the first and second transceiver and the second port. A balun can be used for each port to convert the balanced port to a single-ended port. In each passband filter, two series resonators are use to provide two balanced ends, and two shunt resonators are connected to the series resonators in a crisscross fashion to form a differential or balanced topology. The first and second passband filters have different frequencies.
摘要:
A front-end circuit for a wireless communication unit includes at least two antenna feeds. At least one of the antennas is coupled to an antenna switch. The circuit comprises filters and duplexers and is prepared to operate a number of FDD frequency bands. Each FDD band comprises an Rx band for receive signals and a Tx band for transmit signals. The circuit provides a single band operation mode for each frequency band and aggregated band operation modes. In an aggregated band operation mode Rx signals can be received in two different frequency bands at the same time as well as Tx signals can be transmitted in at least one of the two different frequency bands. In addition, TDD bands as well as GSM bands are covered.
摘要:
The present invention concerns a front-end circuit (FEC) that is connectable to at least two radiators (RAD1M, RAD1D), wherein the front-end circuit (FEC) comprises sub-circuits (SC) and each sub-circuit (SC) is associated to one radiator (RAD1M, RAD1D). Further, each sub-circuit (SC) comprises a signal path (SP), an antenna port (AP) that is electrically coupled to the signal path (SP) and connectable to the radiator (RAD1M, RAD1D), a grounding port (GP) that is connectable to the radiator (RAD1M, RAD1D), a ground termination circuit (GTC), and a grounding switch (GS) that is electrically coupled to the grounding port (GP) and to the grounding termination circuit (GTC).
摘要:
The present invention concerns a front-end circuit (FEC) that is connectable to at least two radiators (RAD1M, RAD1D), wherein the front-end circuit (FEC) comprises sub-circuits (SC) and each sub-circuit (SC) is associated to one radiator (RAD1M, RAD1D). Further, each sub-circuit (SC) comprises a signal path (SP), an antenna port (AP) that is electrically coupled to the signal path (SP) and connectable to the radiator (RAD1M, RAD1D), a grounding port (GP) that is connectable to the radiator (RAD1M, RAD1D), a ground termination circuit (GTC), and a grounding switch (GS) that is electrically coupled to the grounding port (GP) and to the grounding termination circuit (GTC).