Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
    1.
    发明授权
    Method and system for wafer-level tuning of bulk acoustic wave resonators and filters 失效
    用于体声波谐振器和滤波器的晶片级调谐的方法和系统

    公开(公告)号:US06456173B1

    公开(公告)日:2002-09-24

    申请号:US09784634

    申请日:2001-02-15

    IPC分类号: H03H915

    摘要: A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the device thickness. In particular, the device thickness has a non-uniformity profile across the device surface. A mask with an aperture is placed over the device surface and a particle beam is applied over the mask to allow part of the particle beam to make contact with the device surface at a localized area beneath the aperture. The particles that pass through the aperture are deposited on the device surface to add material on the device surface, thereby increasing the surface thickness to correct for thickness non-uniformity. Alternatively, the particles that pass through the aperture remove part of the device surface in an etching process, thereby reducing the surface thickness. Prior to thickness adjustment, a frequency measurement device or thickness measurement device is used to map the device surface for obtaining the non-uniformity profile.

    摘要翻译: 一种通过调节器件厚度来调整晶片级的体声波器件的方法和系统。 特别地,器件厚度在器件表面上具有不均匀性。 具有孔径的掩模放置在器件表面上,并且将粒子束施加在掩模上以允许部分粒子束在孔下方的局部区域处与器件表面接触。 通过孔的颗粒沉积在器件表面上以在器件表面上添加材料,从而增加表面厚度以校正厚度不均匀性。 或者,通过孔的颗粒在蚀刻工艺中去除部件的表面,从而降低表面厚度。 在厚度调整之前,使用频率测量装置或厚度测量装置来映射装置表面以获得不均匀性。

    Monolithic FBAR duplexer and method of making the same
    2.
    发明授权
    Monolithic FBAR duplexer and method of making the same 有权
    单片FBAR双工器及其制作方法

    公开(公告)号:US06407649B1

    公开(公告)日:2002-06-18

    申请号:US09755954

    申请日:2001-01-05

    IPC分类号: H03H956

    摘要: A monolithic bulk acoustic wave (BAW) duplexer, and a method for fabricating same, the duplexer having a, transmitter section as a first component filter and a receiver section as a second component filter, both component filters fabricated on a single substrate and both including at least one shunt BAW resonator and one series BAW resonator, each BAW resonator including a resonator section atop an isolation structure provided so as to separate the resonator section from the substrate, including: a patterned bottom electrode material for use as the bottom electrode of each of the resonators of the duplexer; a patterned piezoelectric material for use as the piezolayer of each of the resonators of the duplexer; a patterned top electrode material for use as the top electrode of each of the resonators of the duplexer; a tuning layer for the shunt resonator of each of the two component duplexer filters; and a tuning layer for both the series and shunt resonators of one of the two component duplexer filters. In some applications, each isolation structure is an acoustic mirror. Also in some applications, the duplexer further includes at least one planar spiral inductor provided in the course of depositing one or another layer of material in building up the duplexer, the planar spiral inductor having coils spiraling outward substantially in a plane from an innermost coil to an outermost coil.

    摘要翻译: 单片体声波(BAW)双工器及其制造方法,具有作为第一分量滤波器的发射机部分和作为第二分量滤波器的接收机部分的双工器,在单个基板上制造的两个部件滤波器, 至少一个并联BAW谐振器和一个串联BAW谐振器,每个BAW谐振器包括设置成将谐振器部分与衬底分离的隔离结构顶部的谐振器部分,包括:用作每个的底部电极的图案化底部电极材料 的双工器谐振器; 用作双工器的每个谐振器的压电层的图案化压电材料; 用作双工器的每个谐振器的顶电极的图案化顶电极材料; 用于两个组件双工器滤波器中的每一个的并联谐振器的调谐层; 以及用于两个组件双工器滤波器之一的串联和并联谐振器的调谐层。 在一些应用中,每个隔离结构都是声反射镜。 同样在一些应用中,双工器还包括至少一个平面螺旋电感器,该平面螺旋电感器设置在堆积双层器中的一个或另一个材料层的过程中,平面螺旋电感器具有基本上在从最内侧的线圈到 最外面的线圈。

    Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity
    3.
    发明授权
    Method and system for wafer-level tuning of bulk acoustic wave resonators and filters by reducing thickness non-uniformity 失效
    通过减小厚度不均匀性对体声波谐振器和滤波器进行晶片级调谐的方法和系统

    公开(公告)号:US06480074B1

    公开(公告)日:2002-11-12

    申请号:US09845096

    申请日:2001-04-27

    IPC分类号: H03H302

    CPC分类号: H03H3/013 Y10T29/42

    摘要: A method and system for tuning a bulk acoustic wave device at wafer level by reducing the thickness non-uniformity of the topmost surface of the device using a chemical vapor deposition process. A light beam is used to enhance the deposition of material on the topmost surface at one local location at a time. Alternatively, an electrode is used to produce plasma for locally enhancing the vapor deposition process. A moving mechanism is used to move the light beam or the electrode to different locations for reducing the thickness non-uniformity until the resonance frequency of the device falls within specification.

    摘要翻译: 一种用于通过使用化学气相沉积工艺减小器件的最上表面的厚度不均匀性来调整晶片级的体声波器件的方法和系统。 光束用于一次在一个本地位置增强材料在最上表面上的沉积。 或者,使用电极来产生用于局部增强气相沉积工艺的等离子体。 移动机构用于将光束或电极移动到不同的位置,以减小厚度不均匀,直到器件的谐振频率落在规格内。

    Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
    4.
    发明授权
    Method and system for wafer-level tuning of bulk acoustic wave resonators and filters 失效
    用于体声波谐振器和滤波器的晶片级调谐的方法和系统

    公开(公告)号:US06462460B1

    公开(公告)日:2002-10-08

    申请号:US09844218

    申请日:2001-04-27

    IPC分类号: H01L4108

    CPC分类号: H03H3/013 H03H3/04

    摘要: A method and system for tuning a bulk acoustic wave device at wafer level, wherein the thickness of topmost layer of the device is non-uniform. The thickness non-uniformity causes the resonant frequency of the device to vary from one location to another location of the topmost layer. A laser beam, operatively connected to a beam moving mechanism, is used to locally trim the topmost layer, one location at a time.

    摘要翻译: 一种用于在晶片级调谐体声波器件的方法和系统,其中该器件的最上层的厚度是不均匀的。 厚度不均匀导致器件的谐振频率从最高层的一个位置到另一个位置变化。 可操作地连接到光束移动机构的激光束用于一次一个位置的最顶层的局部修整。

    Method and system for wafer-level tuning of bulk acoustic wave resonators and filters
    5.
    发明授权
    Method and system for wafer-level tuning of bulk acoustic wave resonators and filters 失效
    用于体声波谐振器和滤波器的晶片级调谐的方法和系统

    公开(公告)号:US06441702B1

    公开(公告)日:2002-08-27

    申请号:US09844264

    申请日:2001-04-27

    IPC分类号: H03H302

    摘要: A method and system for tuning a bulk acoustic wave device at the wafer level by adjusting the thickness of the device. In particular, the thickness of the device has a non-uniformity profile across the device surface. A mask having a thickness non-uniformity profile based partly on the thickness non-uniformity profile of the device surface is provided on the device surface for etching. A dry etching method is used to remove part of the mask to expose the underlying device surface and further removed the exposed device surface until the thickness non-uniformity of the device surface falls within tolerance of the device.

    摘要翻译: 一种用于通过调节器件的厚度来调整晶片级的体声波器件的方法和系统。 特别地,装置的厚度在装置表面上具有不均匀性。 在器件表面上设置具有基于器件表面的厚度不均匀轮廓的厚度不均匀轮廓的掩模,用于蚀刻。 使用干蚀刻方法去除部分掩模以暴露下面的器件表面,并进一步去除暴露的器件表面,直到器件表面的厚度不均匀性落在器件的容限内。

    Dual-channel passband filtering system using acoustic resonators in lattice topology
    7.
    发明授权
    Dual-channel passband filtering system using acoustic resonators in lattice topology 失效
    双通道通带滤波系统,在晶格拓扑中使用声谐振器

    公开(公告)号:US07194247B2

    公开(公告)日:2007-03-20

    申请号:US09965637

    申请日:2001-09-26

    申请人: Pasi Tikka Juha Ellä

    发明人: Pasi Tikka Juha Ellä

    IPC分类号: H04B1/16

    CPC分类号: H03H9/009 H03H9/70

    摘要: A dual-channel passband filtering system having a first, second and third balanced ports for connecting, respectively, to a first transceiver, an antenna and a second transceiver. A first lattice-type passband filter is connected between the first and the second port, and a second lattice-type passband filter is connected between the second and the third port. A phase shifter is used to match the first and second transceiver and the second port. A balun can be used for each port to convert the balanced port to a single-ended port. In each passband filter, two series resonators are use to provide two balanced ends, and two shunt resonators are connected to the series resonators in a crisscross fashion to form a differential or balanced topology. The first and second passband filters have different frequencies.

    摘要翻译: 一种具有用于分别连接到第一收发器,天线和第二收发器的第一,第二和第三平衡端口的双通道通带滤波系统。 第一格式通带滤波器连接在第一和第二端口之间,第二格式通带滤波器连接在第二和第三端口之间。 移相器用于匹配第一和第二收发器和第二端口。 每个端口可以使用平衡 - 不平衡变换器,将平衡端口转换为单端口。 在每个通带滤波器中,使用两个串联谐振器来提供两个平衡端,并且两个并联谐振器以十字形方式连接到串联谐振器,以形成差分或平衡拓扑。 第一和第二通带滤波器具有不同的频率。

    Front-end Circuit for Band Aggregation Modes
    8.
    发明申请
    Front-end Circuit for Band Aggregation Modes 有权
    用于频带聚合模式的前端电路

    公开(公告)号:US20140329475A1

    公开(公告)日:2014-11-06

    申请号:US14346622

    申请日:2011-09-22

    IPC分类号: H04B1/40 H04B7/04 H04L5/14

    摘要: A front-end circuit for a wireless communication unit includes at least two antenna feeds. At least one of the antennas is coupled to an antenna switch. The circuit comprises filters and duplexers and is prepared to operate a number of FDD frequency bands. Each FDD band comprises an Rx band for receive signals and a Tx band for transmit signals. The circuit provides a single band operation mode for each frequency band and aggregated band operation modes. In an aggregated band operation mode Rx signals can be received in two different frequency bands at the same time as well as Tx signals can be transmitted in at least one of the two different frequency bands. In addition, TDD bands as well as GSM bands are covered.

    摘要翻译: 用于无线通信单元的前端电路包括至少两个天线馈送。 至少一个天线耦合到天线开关。 该电路包括滤波器和双工器,并且准备操作多个FDD频带。 每个FDD频带包括用于接收信号的Rx频带和用于发射信号的Tx频带。 该电路为每个频带和聚合频带操作模式提供单频段操作模式。 在聚合频带操作模式中,可以同时在两个不同的频带中接收Rx信号,并且可以在两个不同频带中的至少一个中发送Tx信号。 此外,还包括TDD频带以及GSM频段。

    FRONT-END CIRCUIT
    9.
    发明申请
    FRONT-END CIRCUIT 有权
    前端电路

    公开(公告)号:US20130344820A1

    公开(公告)日:2013-12-26

    申请号:US13997925

    申请日:2010-12-27

    IPC分类号: H04B1/44

    CPC分类号: H04B1/44 H04B1/006 H04B1/0064

    摘要: The present invention concerns a front-end circuit (FEC) that is connectable to at least two radiators (RAD1M, RAD1D), wherein the front-end circuit (FEC) comprises sub-circuits (SC) and each sub-circuit (SC) is associated to one radiator (RAD1M, RAD1D). Further, each sub-circuit (SC) comprises a signal path (SP), an antenna port (AP) that is electrically coupled to the signal path (SP) and connectable to the radiator (RAD1M, RAD1D), a grounding port (GP) that is connectable to the radiator (RAD1M, RAD1D), a ground termination circuit (GTC), and a grounding switch (GS) that is electrically coupled to the grounding port (GP) and to the grounding termination circuit (GTC).

    摘要翻译: 本发明涉及可连接到至少两个辐射器(RAD1M,RAD1D)的前端电路(FEC),其中前端电路(FEC)包括子电路(SC)和每个子电路(SC) 与一个散热器(RAD1M,RAD1D)相关联。 此外,每个子电路(SC)包括信号路径(SP),电耦合到信号路径(SP)并且可连接到散热器(RAD1M,RAD1D)的天线端口(AP),接地端口 )可连接到电气耦合到接地端口(GP)和接地终端电路(GTC)的散热器(RAD1M,RAD1D),接地终端电路(GTC)和接地开关(GS)。

    Front-end circuit
    10.
    发明授权
    Front-end circuit 有权
    前端电路

    公开(公告)号:US09077437B2

    公开(公告)日:2015-07-07

    申请号:US13997925

    申请日:2010-12-27

    IPC分类号: H04B1/44 H04B1/00

    CPC分类号: H04B1/44 H04B1/006 H04B1/0064

    摘要: The present invention concerns a front-end circuit (FEC) that is connectable to at least two radiators (RAD1M, RAD1D), wherein the front-end circuit (FEC) comprises sub-circuits (SC) and each sub-circuit (SC) is associated to one radiator (RAD1M, RAD1D). Further, each sub-circuit (SC) comprises a signal path (SP), an antenna port (AP) that is electrically coupled to the signal path (SP) and connectable to the radiator (RAD1M, RAD1D), a grounding port (GP) that is connectable to the radiator (RAD1M, RAD1D), a ground termination circuit (GTC), and a grounding switch (GS) that is electrically coupled to the grounding port (GP) and to the grounding termination circuit (GTC).

    摘要翻译: 本发明涉及可连接到至少两个辐射器(RAD1M,RAD1D)的前端电路(FEC),其中前端电路(FEC)包括子电路(SC)和每个子电路(SC) 与一个散热器(RAD1M,RAD1D)相关联。 此外,每个子电路(SC)包括信号路径(SP),电耦合到信号路径(SP)并且可连接到散热器(RAD1M,RAD1D)的天线端口(AP),接地端口 )可连接到电气耦合到接地端口(GP)和接地终端电路(GTC)的散热器(RAD1M,RAD1D),接地终端电路(GTC)和接地开关(GS)。