公开(公告)号：US06791124B2

公开(公告)日：2004-09-14

申请号：US10238362

申请日：2002-09-09

申请人： Jun Hiraoka ,  Kazuo Mizuno ,  Yuichi Sasaki

发明人： Jun Hiraoka ,  Kazuo Mizuno ,  Yuichi Sasaki

IPC分类号： H01L310328

CPC分类号： H01L31/03042 ,  H01L31/035281 ,  H01L31/1075 ,  Y02E10/544

摘要： A sequential mesa type avalanche photodiode (APD) comprises a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

公开(公告)号：US06936868B2

公开(公告)日：2005-08-30

申请号：US10768927

申请日：2004-01-30

申请人： Jun Hiraoka ,  Kazuo Mizuno ,  Yuichi Sasaki

发明人： Jun Hiraoka ,  Kazuo Mizuno ,  Yuichi Sasaki

IPC分类号： H01L21/205 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/107 ,  H01L31/0328 ,  H01L31/0336 ,  H01L31/072 ,  H01L31/19

CPC分类号： H01L31/03042 ,  H01L31/035281 ,  H01L31/1075 ,  Y02E10/544

摘要： A sequential mesa type avalanche photodiode (APD) includes a semiconductor substrate and a sequential mesa portion formed on the substrate. In the sequential mesa portion, a plurality of semiconductor layers, including a light absorbing layer and a multiplying layer, are laminated by epitaxial growth. In the plurality of semiconductor layers, a pair of semiconductor layers forming a pn junction is included. The carrier density of a semiconductor layer which is near to the substrate among the pair of semiconductor layers is larger than the carrier density of a semiconductor layer which is far from the substrate among the pair of semiconductor layers. In the APD, light-receiving current based on movement of electrons and positive holes generated in the sequential mesa portion when light is incident from the substrate toward the light absorbing layer is larger at a central portion than at a peripheral portion of the sequential mesa portion.

摘要翻译： 顺序台面型雪崩光电二极管（APD）包括半导体衬底和形成在衬底上的顺序台面部分。 在顺序台面部分中，通过外延生长层压包括光吸收层和倍增层的多个半导体层。 在多个半导体层中，包括形成pn结的一对半导体层。 在一对半导体层中靠近衬底的半导体层的载流子密度大于远离一对半导体层中的衬底的半导体层的载流子密度。 在APD中，当光从衬底入射到光吸收层时，基于在顺序台面部分中产生的电子和正空穴移动的光接收电流在中间部分处比在顺序台面部分的周边部分处更大 。

公开(公告)号：US07215162B2

公开(公告)日：2007-05-08

申请号：US10523352

申请日：2003-09-24

申请人： Kazuo Mizuno ,  Ryu Kimura ,  Hisanori Uda ,  Hiroaki Hayashi

发明人： Kazuo Mizuno ,  Ryu Kimura ,  Hisanori Uda ,  Hiroaki Hayashi

IPC分类号： H03D3/00

CPC分类号： H03D1/18 ,  H03G1/0023 ,  H03G3/30

摘要： A start signal outputting circuit according to the invention has a differential RF/DC convertor part 100 for converting a high frequency power (RF) into a d.c. potential (DC). The RF/DC convertor part 100 is formed by two transistors QRD, QDD working as a diode, and transistors QR1˜R3, QD1˜D3 and resistances RR1˜R3 for forming high resistances at anode sides and cathode sides of these diodes, respectively. A differential amplification part 200 disposed at a later stage of the diode has not only amplifying effect but also low-pass filtering effect together with filtering pars 120, 210 of its previous and later stages. In this case, it is designed so that current flowing through the respective circuits is about 2˜3 μA. As a result, even if the high frequency power of the specified frequency is weak, for example −60˜−40 dBm, a start signal outputting circuit 1000 which outputs a d.c. potential of 0.3˜2.4V, is suitable for integration and has a low power consumption can be obtained.

摘要翻译： 根据本发明的启动信号输出电路具有差分RF / DC转换器部分100，用于将高频功率（RF）转换成直流 电位（DC）。 RF / DC转换器部分100由作为二极管工作的两个晶体管Q 1，D 2，D 2和D 2形成，晶体管Q 1至R 3， 分别用于在这些二极管的阳极侧和阴极侧形成高电阻的电阻R 1〜R 3〜R 3。 设置在二极管的稍后阶段的差分放大部分200不仅具有放大效应，而且还具有低通滤波效果以及其前一级和后级级的滤波器120,210。 在这种情况下，其设计使得流过各个电路的电流约为2〜3μA。 结果，即使指定频率的高频功率弱，例如-60〜-40dBm，也可以是输出直流电平的启动信号输出电路1000。 电位为0.3〜2.4V，适合集成，具有低功耗可以获得。

公开(公告)号：US07301419B2

公开(公告)日：2007-11-27

申请号：US10545365

申请日：2004-04-16

申请人： Kazuo Mizuno ,  Ryu Kimura ,  Hisanori Uda ,  Hiroaki Hayashi

发明人： Kazuo Mizuno ,  Ryu Kimura ,  Hisanori Uda ,  Hiroaki Hayashi

IPC分类号： H01P1/10 ,  H01P5/12

CPC分类号： H01P1/15

摘要： Two lines Ai1 (i=1 or 2) are connected to an input terminal In. The line Ai1 is grounded via a capacitor Ci1. The line Ai1 and a line Bi1 form a coupled line. One end of the line Bi1 is connected to a positive pole of a diode Di1 which is grounded at its negative pole. Lines Bi0 and Bi2 are connected to the other end of the line Bi1. The other end of the line Bi0 is connected to a capacitor Ci0 which is grounded at its other end and a resistor Ri0 which is connected to a voltage control terminal VCTLi at its other end. The other end of the line Bi2 is connected to the positive pole of a diode Di2. The line Bi2 and the line Ai2 form a coupled line. One end of the line Ai2 is connected to an output terminal Out-i, and the other end is grounded via a capacitor Ci2. The output of the terminals Out-1, 2 are switched to 5.8 GHz band, 4.8 GHz band and cut-off, by applying to VCTL1 and VCTL2 three potentials, that is, ground potential. positive potential which causes no current flow and positive potential which causes current flow.

摘要翻译： 两条线Ai 1（i = 1或2）连接到输入端子In。 线A 1 通过电容器C i1 1接地。 线A 1 和线B 1 i 1 <1>形成耦合线。 线B 的一端连接到在其负极处接地的二极管D 1 i1的正极。 线B＆lt; i0＆gt;和B＆lt; i2＆gt;连接到线B 1 i 1的另一端。 线路B01的另一端连接到在其另一端接地的电容器C i0，并且电阻器R i0 在其另一端连接到电压控制端子V CTL1。 线B 2 i 2的另一端连接到二极管D 2 i2的正极。 线B 2 i2和线A 2 2 2形成耦合线。 线路A 1的一端连接到输出端子Out-i，另一端通过电容器C i2接地。 通过施加到V CTL1和V CTL2三个电位，将端子Out-1,2的输出切换到5.8GHz频带，4.8GHz频带和截止频率， 那就是地面潜力。 没有导致电流流动的正电位和导致电流流动的正电位。