公开(公告)号：US08497543B2

公开(公告)日：2013-07-30

申请号：US13234260

申请日：2011-09-16

申请人： Jun Ogi ,  Takeshi Kamigaichi ,  Tatsuo Izumi

发明人： Jun Ogi ,  Takeshi Kamigaichi ,  Tatsuo Izumi

IPC分类号： H01L29/76

CPC分类号： H01L27/11524 ,  H01L21/76229 ,  H01L21/7682

摘要： A semiconductor memory device includes a semiconductor substrate, a plurality of element isolations, a plurality of first stacked bodies, a second stacked body, and an interlayer insulating film. Distance between each of the first stacked bodies and the second stacked body is longer than distance between adjacent ones of the first stacked bodies. A first void is formed in the interlayer insulating film between the first stacked bodies. A second void is formed in the interlayer insulating film between one of the first stacked bodies and the second stacked body. And, a lower end of the second void is located above a lower end of the first void.

摘要翻译： 半导体存储器件包括半导体衬底，多个元件隔离，多个第一层叠体，第二层叠体和层间绝缘膜。 第一层叠体和第二层叠体之间的距离比相邻的第一层叠体的距离长。 在第一堆叠体之间的层间绝缘膜中形成第一空隙。 在第一层叠体和第二层叠体之间的层间绝缘膜中形成第二空隙。 并且，第二空隙的下端位于第一空隙的下端之上。