Power module for energy recovery and discharge sustain of plasma display panel
    1.
    发明授权
    Power module for energy recovery and discharge sustain of plasma display panel 有权
    等离子显示面板能量回收和放电维持功率模块

    公开(公告)号:US07859528B2

    公开(公告)日:2010-12-28

    申请号:US11787276

    申请日:2007-04-16

    IPC分类号: G06F3/038

    CPC分类号: G09G3/2965

    摘要: A power module for energy recovery and sustain of a plasma display panel is disclosed. The power module includes a first high-voltage integrated circuit which is of a single type, a first switching element for receiving an output from the first high-voltage integrated circuit, and performing a switching operation in response to the output received from the first high-voltage integrated circuit, a first diode connected to one terminal of the first switching element, a second high-voltage integrated circuit which is of a single type, and is arranged symmetrically with the first high-voltage integrated circuit, a second switching element for receiving an output from the second high-voltage integrated circuit, and performing a switching operation in response to the output received from the second high-voltage integrated circuit, and a second diode connected to one terminal of the second switching element.

    摘要翻译: 公开了用于等离子体显示面板的能量回收和维持的功率模块。 功率模块包括单一类型的第一高压集成电路,用于接收来自第一高压集成电路的输出的第一开关元件,并且响应于从第一高电平接收到的输出执行开关操作 电压集成电路,连接到第一开关元件的一个端子的第一二极管,单一类型的第二高压集成电路,并且与第一高压集成电路对称地布置;第二开关元件,用于 接收来自第二高压集成电路的输出,并且响应于从第二高压集成电路接收的输出执行开关操作,以及连接到第二开关元件的一个端子的第二二极管。

    Power module for energy recovery and discharge sustain of plasma display panel
    2.
    发明申请
    Power module for energy recovery and discharge sustain of plasma display panel 有权
    等离子显示面板能量回收和放电维持功率模块

    公开(公告)号:US20070285024A1

    公开(公告)日:2007-12-13

    申请号:US11787276

    申请日:2007-04-16

    IPC分类号: G09G3/10

    CPC分类号: G09G3/2965

    摘要: A power module for energy recovery and sustain of a plasma display panel is disclosed. The power module includes a first high-voltage integrated circuit which is of a single type, a first switching element for receiving an output from the first high-voltage integrated circuit, and performing a switching operation in response to the output received from the first high-voltage integrated circuit, a first diode connected to one terminal of the first switching element, a second high-voltage integrated circuit which is of a single type, and is arranged symmetrically with the first high-voltage integrated circuit, a second switching element for receiving an output from the second high-voltage integrated circuit, and performing a switching operation in response to the output received from the second high-voltage integrated circuit, and a second diode connected to one terminal of the second switching element.

    摘要翻译: 公开了用于等离子体显示面板的能量回收和维持的功率模块。 功率模块包括单一类型的第一高压集成电路,用于接收来自第一高压集成电路的输出的第一开关元件,并且响应于从第一高电平接收到的输出执行开关操作 电压集成电路,连接到第一开关元件的一个端子的第一二极管,单一类型的第二高压集成电路,并且与第一高压集成电路对称地布置;第二开关元件,用于 接收来自第二高压集成电路的输出,并且响应于从第二高压集成电路接收的输出执行开关操作,以及连接到第二开关元件的一个端子的第二二极管。

    Insulated gate bipolar transistor fault protection system
    3.
    发明授权
    Insulated gate bipolar transistor fault protection system 有权
    绝缘栅双极晶体管故障保护系统

    公开(公告)号:US07817392B2

    公开(公告)日:2010-10-19

    申请号:US11986615

    申请日:2007-11-21

    IPC分类号: H02H3/00

    摘要: An Insulated Gate Bipolar Transistor (IGBT) fault protection system is provided. The fault protection system includes a GVPA, a gate voltage clamper, and a soft-off unit. The GVPA analyzes a gate voltage pattern of an IGBT to determine whether or not a fault has occurred. The gate voltage clamper prevents an increase in a gate voltage of the IGBT according to an output signal that the GVPA outputs when a fault has occurred. The soft-off unit softly turns off the IGBT according to an output signal that the GVPA outputs when a fault has occurred.

    摘要翻译: 提供绝缘栅双极晶体管(IGBT)故障保护系统。 故障保护系统包括GVPA,栅极电压钳位器和软关断单元。 GVPA分析IGBT的栅极电压模式,以确定是否发生故障。 栅极电压钳位器根据在发生故障时GVPA输出的输出信号防止IGBT栅极电压的增加。 软断开单元根据发生故障时GVPA输出的输出信号轻轻地关闭IGBT。

    Insulated gate bipolar transistor fault protection system
    4.
    发明申请
    Insulated gate bipolar transistor fault protection system 有权
    绝缘栅双极晶体管故障保护系统

    公开(公告)号:US20080212247A1

    公开(公告)日:2008-09-04

    申请号:US11986615

    申请日:2007-11-21

    IPC分类号: H02H3/02

    摘要: An Insulated Gate Bipolar Transistor (IGBT) fault protection system is provided. The fault protection system includes a GVPA, a gate voltage clamper, and a soft-off unit. The GVPA analyzes a gate voltage pattern of an IGBT to determine whether or not a fault has occurred. The gate voltage clamper prevents an increase in a gate voltage of the IGBT according to an output signal that the GVPA outputs when a fault has occurred. The soft-off unit softly turns off the IGBT according to an output signal that the GVPA outputs when a fault has occurred.

    摘要翻译: 提供绝缘栅双极晶体管(IGBT)故障保护系统。 故障保护系统包括GVPA,栅极电压钳位器和软关断单元。 GVPA分析IGBT的栅极电压模式,以确定是否发生故障。 栅极电压钳位器根据在发生故障时GVPA输出的输出信号防止IGBT栅极电压的增加。 软断开单元根据发生故障时GVPA输出的输出信号轻轻地关闭IGBT。

    3-Phase inverter module, motor driving apparatus using the same, and inverter integrated circuit package
    5.
    发明申请
    3-Phase inverter module, motor driving apparatus using the same, and inverter integrated circuit package 失效
    三相逆变器模块,使用其的电机驱动装置,以及逆变器集成电路封装

    公开(公告)号:US20080002445A1

    公开(公告)日:2008-01-03

    申请号:US11805631

    申请日:2007-05-24

    IPC分类号: H02M7/537 H02M7/00

    摘要: A 3-phase inverter module is provided, which includes first and second U-phase switching elements connected in series to each other to constitute a U-phase inverter, first and second V-phase switching elements connected in series to each other to constitute a V-phase inverter, first and second W-phase switching elements connected in series to each other to constitute a W-phase inverter, a U-phase high voltage integrated circuit for generating a control signal for controlling the U-phase inverter according to a U-phase input signal, which has a fault-out terminal for the U-phase, a V-phase high voltage integrated circuit for generating a control signal for controlling the V-phase inverter according to a V-phase input signal, which has a fault-out terminal for the V-phase, and a W-phase high voltage integrated circuit for generating a control signal for controlling the W-phase inverter according to a W-phase input signal, which has a fault-out terminal for the W-phase.

    摘要翻译: 提供一种三相逆变器模块,其包括彼此串联连接以构成U相逆变器的第一和第二U相开关元件,第一和第二V相开关元件彼此串联连接以构成 V相逆变器,第一W相开关元件和第二W相开关元件串联连接构成W相逆变器,U相高压集成电路,用于生成控制信号,用于根据 具有用于U相的故障输出端子的U相输入信号,V相高压集成电路,用于根据V相输入信号产生用于控制V相逆变器的控制信号,V相输入信号具有 用于V相的故障输出端子和用于根据W相输入信号产生用于控制W相逆变器的控制信号的W相高压集成电路,其具有用于V相的故障输出端子 W相。

    High performance active gate drive for IGBTs
    6.
    发明授权
    High performance active gate drive for IGBTs 有权
    IGBT的高性能有源栅极驱动

    公开(公告)号:US06208185B1

    公开(公告)日:2001-03-27

    申请号:US09276417

    申请日:1999-03-25

    IPC分类号: H03K512

    CPC分类号: H03K17/168 H03K17/0406

    摘要: An active drive circuit for high power IGBTs provides optimized switching performance for both turn-on and turn-off by incorporating a three-stage action to improve performance characteristics. The gate drive circuit includes a semiconductor switch such as a MOSFET connected in series with a low resistance gate turn-on resistor between the supply line and the gate input line, and a parallel connected bipolar transistor. During the first and third stages of turn-on, the MOSFET switch is turned on to provide rapid charging of the gate, whereas during the second stage the bipolar transistor is turned on to provide a controlled level of current charging of the gate. Similarly, a switch such as an MOSFET is connected in series with a low resistance gate turn-off resistor between the turn-off supply voltage line and the gate input line, and a bipolar transistor is connected in parallel therewith across the supply line and the gate input line. During the first and second stages of turn-off, the MOSFET switch is turned on to provide rapid discharging of the gate whereas during the second stage the bipolar transistor is turned on to provide a controlled level of discharge current from the gate.

    摘要翻译: 大功率IGBT的有源驱动电路通过结合三级动作来提高性能特性,为开启和关断提供优化的开关性能。 栅极驱动电路包括与电源线和栅极输入线之间的低电阻栅极导通电阻串联连接的MOSFET等半导体开关和并联连接的双极型晶体管。 在导通的第一和第三阶段期间,MOSFET开关导通以提供栅极的快速充电,而在第二阶段期间,双极晶体管导通以提供栅极的受控电流充电水平。 类似地,诸如MOSFET的开关与关断电源电压线和栅极输入线之间的低电阻栅极截止电阻串联连接,并且双极晶体管与供电线并联连接,并且 门输入线。 在关断的第一和第二阶段期间,MOSFET开关导通以提供栅极的快速放电,而在第二阶段期间,双极晶体管导通以提供来自栅极的受控电平的放电电流。

    Short circuit protection of IGBTs and other power switching devices
    7.
    发明授权
    Short circuit protection of IGBTs and other power switching devices 有权
    IGBT等功率开关器件的短路保护

    公开(公告)号:US6097582A

    公开(公告)日:2000-08-01

    申请号:US250472

    申请日:1999-02-12

    IPC分类号: H03K17/082 H03K17/16 H02H3/18

    CPC分类号: H03K17/165 H03K17/0828

    摘要: A short circuit protection circuit for IGBTs and similar power switch devices. Device collector voltage, e.g., desaturation voltage, is monitored to detect rapidly the occurrence of a short circuit fault. The voltage between the power device emitter and the Kelvin emitter terminals of the device preferably is also monitored and integrated to obtain an estimate of the current flowing through the power switch device. Circuit protection is implemented if either the measured collector to emitter voltage exceeds a selected level or the estimated current through the device exceeds a selected level. Upon the detection of the fault, a capacitor in parallel with a zener diode is connected between the power switch gate and ground. Thus, following a fault, the gate voltage is driven quickly to a low level as the voltage on the gate is discharged through the capacitor. The zener diode establishes a clamp voltage at a selected level of gate voltage that permits controlled current flow through the power switching device that is within the capacity of the device so that the device is not damaged. A pre-charged capacitor is then connected between the gate and ground to turn off the power switching device gradually as the pre-charged capacitor discharges into the gate. The voltage level on the pre-charged capacitor is established by a zener diode connected in parallel thereto.

    摘要翻译: IGBT和类似功率开关器件的短路保护电路。 监控器件集电极电压,例如去饱和电压,以快速检测短路故障的发生。 功率器件发射极和器件的开尔文发射极端子之间的电压优选地也被监测和积分,以获得流过功率开关器件的电流的估计。 如果测量的集电极到发射极的电压超过选定的电平或者通过器件的估计电流超过选定的电平,则实现电路保护。 在检测到故障时,与齐纳二极管并联的电容器连接在电源开关门和地之间。 因此,在发生故障之后,栅极电压通过电容器放电而迅速驱动到低电平。 齐纳二极管以选定的栅极电压电平建立钳位电压,允许受控的电流流过设备容量内的功率开关器件,从而不会损坏器件。 然后,预充电电容器连接在栅极和地之间,以使预充电电容器放电到栅极中逐渐关闭电源开关器件。 预充电电容器上的电压电平由与其并联连接的齐纳二极管建立。

    3-phase inverter module, motor driving apparatus using the same, and inverter integrated circuit package
    8.
    发明授权
    3-phase inverter module, motor driving apparatus using the same, and inverter integrated circuit package 失效
    三相逆变器模块,使用其的电机驱动装置,以及逆变器集成电路封装

    公开(公告)号:US08027183B2

    公开(公告)日:2011-09-27

    申请号:US11805631

    申请日:2007-05-24

    IPC分类号: H02M7/537

    摘要: A 3-phase inverter module is provided, which includes first and second U-phase switching elements connected in series to each other to constitute a U-phase inverter, first and second V-phase switching elements connected in series to each other to constitute a V-phase inverter, first and second W-phase switching elements connected in series to each other to constitute a W-phase inverter, a U-phase high voltage integrated circuit for generating a control signal for controlling the U-phase inverter according to a U-phase input signal, which has a fault-out terminal for the U-phase, a V-phase high voltage integrated circuit for generating a control signal for controlling the V-phase inverter according to a V-phase input signal, which has a fault-out terminal for the V-phase, and a W-phase high voltage integrated circuit for generating a control signal for controlling the W-phase inverter according to a W-phase input signal, which has a fault-out terminal for the W-phase.

    摘要翻译: 提供一种三相逆变器模块,其包括彼此串联连接以构成U相逆变器的第一和第二U相开关元件,第一和第二V相开关元件彼此串联连接以构成 V相逆变器,第一W相开关元件和第二W相开关元件串联连接构成W相逆变器,U相高压集成电路,用于生成控制信号,用于根据 具有用于U相的故障输出端子的U相输入信号,V相高压集成电路,用于根据V相输入信号产生用于控制V相逆变器的控制信号,V相输入信号具有 用于V相的故障输出端子和用于根据W相输入信号产生用于控制W相逆变器的控制信号的W相高压集成电路,其具有用于V相的故障输出端子 W相。