摘要:
A power module for energy recovery and sustain of a plasma display panel is disclosed. The power module includes a first high-voltage integrated circuit which is of a single type, a first switching element for receiving an output from the first high-voltage integrated circuit, and performing a switching operation in response to the output received from the first high-voltage integrated circuit, a first diode connected to one terminal of the first switching element, a second high-voltage integrated circuit which is of a single type, and is arranged symmetrically with the first high-voltage integrated circuit, a second switching element for receiving an output from the second high-voltage integrated circuit, and performing a switching operation in response to the output received from the second high-voltage integrated circuit, and a second diode connected to one terminal of the second switching element.
摘要:
A power module for energy recovery and sustain of a plasma display panel is disclosed. The power module includes a first high-voltage integrated circuit which is of a single type, a first switching element for receiving an output from the first high-voltage integrated circuit, and performing a switching operation in response to the output received from the first high-voltage integrated circuit, a first diode connected to one terminal of the first switching element, a second high-voltage integrated circuit which is of a single type, and is arranged symmetrically with the first high-voltage integrated circuit, a second switching element for receiving an output from the second high-voltage integrated circuit, and performing a switching operation in response to the output received from the second high-voltage integrated circuit, and a second diode connected to one terminal of the second switching element.
摘要:
An Insulated Gate Bipolar Transistor (IGBT) fault protection system is provided. The fault protection system includes a GVPA, a gate voltage clamper, and a soft-off unit. The GVPA analyzes a gate voltage pattern of an IGBT to determine whether or not a fault has occurred. The gate voltage clamper prevents an increase in a gate voltage of the IGBT according to an output signal that the GVPA outputs when a fault has occurred. The soft-off unit softly turns off the IGBT according to an output signal that the GVPA outputs when a fault has occurred.
摘要:
An Insulated Gate Bipolar Transistor (IGBT) fault protection system is provided. The fault protection system includes a GVPA, a gate voltage clamper, and a soft-off unit. The GVPA analyzes a gate voltage pattern of an IGBT to determine whether or not a fault has occurred. The gate voltage clamper prevents an increase in a gate voltage of the IGBT according to an output signal that the GVPA outputs when a fault has occurred. The soft-off unit softly turns off the IGBT according to an output signal that the GVPA outputs when a fault has occurred.
摘要:
A 3-phase inverter module is provided, which includes first and second U-phase switching elements connected in series to each other to constitute a U-phase inverter, first and second V-phase switching elements connected in series to each other to constitute a V-phase inverter, first and second W-phase switching elements connected in series to each other to constitute a W-phase inverter, a U-phase high voltage integrated circuit for generating a control signal for controlling the U-phase inverter according to a U-phase input signal, which has a fault-out terminal for the U-phase, a V-phase high voltage integrated circuit for generating a control signal for controlling the V-phase inverter according to a V-phase input signal, which has a fault-out terminal for the V-phase, and a W-phase high voltage integrated circuit for generating a control signal for controlling the W-phase inverter according to a W-phase input signal, which has a fault-out terminal for the W-phase.
摘要:
An active drive circuit for high power IGBTs provides optimized switching performance for both turn-on and turn-off by incorporating a three-stage action to improve performance characteristics. The gate drive circuit includes a semiconductor switch such as a MOSFET connected in series with a low resistance gate turn-on resistor between the supply line and the gate input line, and a parallel connected bipolar transistor. During the first and third stages of turn-on, the MOSFET switch is turned on to provide rapid charging of the gate, whereas during the second stage the bipolar transistor is turned on to provide a controlled level of current charging of the gate. Similarly, a switch such as an MOSFET is connected in series with a low resistance gate turn-off resistor between the turn-off supply voltage line and the gate input line, and a bipolar transistor is connected in parallel therewith across the supply line and the gate input line. During the first and second stages of turn-off, the MOSFET switch is turned on to provide rapid discharging of the gate whereas during the second stage the bipolar transistor is turned on to provide a controlled level of discharge current from the gate.
摘要:
A short circuit protection circuit for IGBTs and similar power switch devices. Device collector voltage, e.g., desaturation voltage, is monitored to detect rapidly the occurrence of a short circuit fault. The voltage between the power device emitter and the Kelvin emitter terminals of the device preferably is also monitored and integrated to obtain an estimate of the current flowing through the power switch device. Circuit protection is implemented if either the measured collector to emitter voltage exceeds a selected level or the estimated current through the device exceeds a selected level. Upon the detection of the fault, a capacitor in parallel with a zener diode is connected between the power switch gate and ground. Thus, following a fault, the gate voltage is driven quickly to a low level as the voltage on the gate is discharged through the capacitor. The zener diode establishes a clamp voltage at a selected level of gate voltage that permits controlled current flow through the power switching device that is within the capacity of the device so that the device is not damaged. A pre-charged capacitor is then connected between the gate and ground to turn off the power switching device gradually as the pre-charged capacitor discharges into the gate. The voltage level on the pre-charged capacitor is established by a zener diode connected in parallel thereto.
摘要:
A 3-phase inverter module is provided, which includes first and second U-phase switching elements connected in series to each other to constitute a U-phase inverter, first and second V-phase switching elements connected in series to each other to constitute a V-phase inverter, first and second W-phase switching elements connected in series to each other to constitute a W-phase inverter, a U-phase high voltage integrated circuit for generating a control signal for controlling the U-phase inverter according to a U-phase input signal, which has a fault-out terminal for the U-phase, a V-phase high voltage integrated circuit for generating a control signal for controlling the V-phase inverter according to a V-phase input signal, which has a fault-out terminal for the V-phase, and a W-phase high voltage integrated circuit for generating a control signal for controlling the W-phase inverter according to a W-phase input signal, which has a fault-out terminal for the W-phase.