Thermal electron emission backlight device
    1.
    发明授权
    Thermal electron emission backlight device 失效
    热电子发射背光装置

    公开(公告)号:US07432646B2

    公开(公告)日:2008-10-07

    申请号:US11432533

    申请日:2006-05-12

    IPC分类号: H01J1/62 H01J63/04

    CPC分类号: H01J63/02 H01J63/04

    摘要: A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.

    摘要翻译: 热电子发射背光装置包括:第一基板和第二基板,彼此平行设置并隔开预定的距离; 第一阳极电极和面对第一阳极电极的第二阳极电极,第一阳极电极和第二阳极电极分别形成在第一基板和第二基板的内表面上; 在第一基板和第二基板之间以预定间隔布置并且彼此平行的阴极; 形成在所述第二阳极电极上的荧光体层; 以及设置在第一基板和第二基板之间的多个间隔件,以便保持它们之间的预定距离。 当向阴极施加预定电压时,从阴极发射热电子。

    Thermal electron emission backlight device
    2.
    发明申请
    Thermal electron emission backlight device 失效
    热电子发射背光装置

    公开(公告)号:US20060261726A1

    公开(公告)日:2006-11-23

    申请号:US11432533

    申请日:2006-05-12

    IPC分类号: H01J63/04 H01J1/62

    CPC分类号: H01J63/02 H01J63/04

    摘要: A thermal electron emission backlight device comprises: a first substrate and a second substrate disposed in parallel and separated by a predetermined distance from each other; a first anode electrode and a second anode electrode facing the first anode electrode, the first and second anode electrodes being formed on inner surfaces of the first substrate and the second substrate, respectively; cathode electrodes disposed at predetermined intervals and in parallel with each other between the first substrate and the second substrate; a phosphor layer formed on the second anode electrode; and a plurality of spacers disposed between the first substrate and the second substrate so as to maintain the predetermined distance therebetween. When a predetermined voltage is applied to the cathode electrodes, thermal electrons are emitted from the cathode electrodes.

    摘要翻译: 热电子发射背光装置包括:第一基板和第二基板,彼此平行设置并隔开预定的距离; 第一阳极电极和面对第一阳极电极的第二阳极电极,第一阳极电极和第二阳极电极分别形成在第一基板和第二基板的内表面上; 在第一基板和第二基板之间以预定间隔布置并且彼此平行的阴极; 形成在所述第二阳极电极上的荧光体层; 以及设置在第一基板和第二基板之间的多个间隔件,以便保持它们之间的预定距离。 当向阴极施加预定电压时,从阴极发射热电子。

    Field emission backlight unit, method of driving the same, and method of manufacturing lower panel
    3.
    发明申请
    Field emission backlight unit, method of driving the same, and method of manufacturing lower panel 审中-公开
    场发射背光单元,其驱动方法以及制造下面板的方法

    公开(公告)号:US20060232180A1

    公开(公告)日:2006-10-19

    申请号:US11405014

    申请日:2006-04-17

    IPC分类号: H01J19/10 H01J1/00

    摘要: In a field emission backlight unit, a method of driving the same, and a method of manufacturing a lower substrate, the field emission backlight unit includes: a lower substrate; first and second electrodes alternately formed in parallel lines on the lower substrate; emitters interposed between the lower substrate and the first electrodes; an upper substrate spaced a predetermined distance from the lower substrate and facing the lower substrate; a third electrode formed on a bottom surface of the upper substrate; and a phosphor layer formed on the third electrode. The driving method comprises applying a cathode voltage to the first electrodes and a gate voltage to the second electrodes, followed by reversing the application of the voltages to the first and second electrodes. The manufacturing method comprises forming and drying or firing a patterned carbon nanotube (CNT) layer, and then pattering, drying and firing a conductive thick film.

    摘要翻译: 在场致发射背光单元中,其驱动方法和下基板的制造方法,所述场致发射背光单元包括:下基板; 在下基板上以平行线交替形成的第一和第二电极; 插入在下基板和第一电极之间的发射极; 与下基板隔开预定距离且面向下基板的上基板; 形成在所述上基板的底面上的第三电极; 以及形成在第三电极上的荧光体层。 该驱动方法包括向第一电极施加阴极电压和向第二电极施加栅极电压,随后反转施加到第一和第二电极的电压。 制造方法包括形成并干燥或烧制图案化碳纳米管(CNT)层,然后对导电厚膜进行图案化,干燥和烧制。

    Field emission device (FED) and its method of manufacture
    4.
    发明申请
    Field emission device (FED) and its method of manufacture 失效
    场发射装置(FED)及其制造方法

    公开(公告)号:US20060055304A1

    公开(公告)日:2006-03-16

    申请号:US11223031

    申请日:2005-09-12

    IPC分类号: H01J1/14 H01J19/06 H01K1/04

    摘要: A Field Emission Device (FED) and its method of manufacture includes: forming a substrate; forming a cathode having a cathode aperture on an upper surface of the substrate; forming a material layer having a first through hole with a smaller diameter than that of the cathode aperture on an upper surface of the cathode; forming a first insulator having a first cavity on an upper surface of the material layer; forming a gate electrode having a second through hole on an upper surface of the first insulator; and forming an emitter in a central portion of the cathode aperture.

    摘要翻译: 现场发射装置(FED)及其制造方法包括:形成基板; 在所述基板的上表面上形成具有阴极孔的阴极; 在所述阴极的上表面上形成具有比所述阴极孔径小的直径的第一通孔的材料层; 形成在所述材料层的上表面上具有第一空腔的第一绝缘体; 在所述第一绝缘体的上表面上形成具有第二通孔的栅电极; 并在阴极孔的中心部分形成发射极。

    Field emission device (FED) having cathode aperture to improve electron beam focus and its method of manufacture
    5.
    发明授权
    Field emission device (FED) having cathode aperture to improve electron beam focus and its method of manufacture 失效
    具有阴极孔径以改善电子束聚焦的场发射器件(FED)及其制造方法

    公开(公告)号:US07646142B2

    公开(公告)日:2010-01-12

    申请号:US11223031

    申请日:2005-09-12

    摘要: A Field Emission Device (FED) and its method of manufacture includes: forming a substrate; forming a cathode having a cathode aperture on an upper surface of the substrate; forming a material layer having a first through hole with a smaller diameter than that of the cathode aperture on an upper surface of the cathode; forming a first insulator having a first cavity on an upper surface of the material layer; forming a gate electrode having a second through hole on an upper surface of the first insulator; and forming an emitter in a central portion of the cathode aperture.

    摘要翻译: 现场发射装置(FED)及其制造方法包括:形成基板; 在所述基板的上表面上形成具有阴极孔的阴极; 在所述阴极的上表面上形成具有比所述阴极孔径小的直径的第一通孔的材料层; 形成在所述材料层的上表面上具有第一空腔的第一绝缘体; 在所述第一绝缘体的上表面上形成具有第二通孔的栅电极; 并在阴极孔的中心部分形成发射极。

    Method of manufacturing field emission device
    6.
    发明申请
    Method of manufacturing field emission device 失效
    场致发射装置的制造方法

    公开(公告)号:US20070176206A1

    公开(公告)日:2007-08-02

    申请号:US11604731

    申请日:2006-11-28

    IPC分类号: H01L31/00

    CPC分类号: H01J9/025 H01J3/021

    摘要: A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes steps of sequentially forming a cathode layer, a first insulating layer, and a gate layer on a substrate, forming a protection layer on the gate electrode layer, etching portions of the protection layer and gate electrode to form a plurality of first opening holes where portions of the first insulating layer being exposed through the first opening holes, forming a second insulating layer on the protection layer and on the first opening holes, forming a focus electrode layer on the second insulating layer, forming a photoresist layer on the focus electrode layer, etching a portion of the photoresist layer and a portion of the focus electrode layer to form a second opening hole where a portion of the second insulating layer being exposed through the second opening hole, and forming emitter holes exposing a portion of the cathode layer by etching the exposed surface of the second insulating layer to a bottom surface of the first insulating layer. After removing the photoresist layer electron emission emitters are formed on the cathode layer.

    摘要翻译: 提供了一种制造场致发射器件(FED)的方法,其减少了光掩模图案化工艺的数量并提高了FED的制造成品率。 该方法包括以下步骤:在衬底上依次形成阴极层,第一绝缘层和栅极层,在栅电极层上形成保护层,蚀刻保护层和栅电极的部分,以形成多个第一开口 第一绝缘层的部分通过第一开孔露出的孔,在保护层和第一开孔上形成第二绝缘层,在第二绝缘层上形成聚焦电极层,在焦点上形成光致抗蚀剂层 蚀刻光致抗蚀剂层的一部分和聚焦电极层的一部分以形成第二开孔,其中第二绝缘层的一部分通过第二开孔暴露,并且形成暴露阴极的一部分的发射极 通过将第二绝缘层的暴露表面蚀刻到第一绝缘层的底表面。 在除去光致抗蚀剂层之后,在阴极层上形成电子发射发射体。

    Method of manufacturing field emission device
    7.
    发明授权
    Method of manufacturing field emission device 失效
    场致发射装置的制造方法

    公开(公告)号:US07517710B2

    公开(公告)日:2009-04-14

    申请号:US11604731

    申请日:2006-11-28

    IPC分类号: H01L21/00 H01L29/06

    CPC分类号: H01J9/025 H01J3/021

    摘要: A method of manufacturing a field emission device (FED), which reduces the number of photomask patterning processes and improves the manufacturing yield of the FED, is provided. The method includes steps of sequentially forming a cathode layer, a first insulating layer, and a gate layer on a substrate, forming a protection layer on the gate electrode layer, etching portions of the protection layer and gate electrode to form a plurality of first opening holes where portions of the first insulating layer being exposed through the first opening holes, forming a second insulating layer on the protection layer and on the first opening holes, forming a focus electrode layer on the second insulating layer, forming a photoresist layer on the focus electrode layer, etching a portion of the photoresist layer and a portion of the focus electrode layer to form a second opening hole where a portion of the second insulating layer being exposed through the second opening hole, and forming emitter holes exposing a portion of the cathode layer by etching the exposed surface of the second insulating layer to a bottom surface of the first insulating layer. After removing the photoresist layer electron emission emitters are formed on the cathode layer.

    摘要翻译: 提供了一种制造场致发射器件(FED)的方法,其减少了光掩模图案化工艺的数量并提高了FED的制造成品率。 该方法包括以下步骤:在衬底上依次形成阴极层,第一绝缘层和栅极层,在栅电极层上形成保护层,蚀刻保护层和栅电极的部分,以形成多个第一开口 第一绝缘层的部分通过第一开孔露出的孔,在保护层和第一开孔上形成第二绝缘层,在第二绝缘层上形成聚焦电极层,在焦点上形成光致抗蚀剂层 蚀刻光致抗蚀剂层的一部分和聚焦电极层的一部分以形成第二开孔,其中第二绝缘层的一部分通过第二开孔暴露,并且形成暴露阴极的一部分的发射极 通过将第二绝缘层的暴露表面蚀刻到第一绝缘层的底表面。 在除去光致抗蚀剂层之后,在阴极层上形成电子发射发射体。