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公开(公告)号:US20120241908A1
公开(公告)日:2012-09-27
申请号:US13488958
申请日:2012-06-05
申请人: Jung-Chih TSAO , Yu-Sheng WANG , Kei-Wei CHEN , Ying-Lang WANG
发明人: Jung-Chih TSAO , Yu-Sheng WANG , Kei-Wei CHEN , Ying-Lang WANG
IPC分类号: H01L29/92
CPC分类号: H01L27/0805 , H01L28/60 , H01L28/75
摘要: A semiconductor device is disclosed. The device includes a substrate; a first metal layer overlying the substrate; a dielectric layer overlying the first metal layer; and a second metal layer overlying the dielectric layer, wherein the first metal layer comprises: a first body-centered cubic lattice metal layer; a first underlayer, underlying the first body-centered cubic lattice metal layer, wherein the first underlayer is metal of body-centered cubic lattice and includes titanium (Ti), tungsten (W), molybdenum (Mo) or niobium (Nb); and a first interface of body-centered cubic lattice between the first body-centered cubic lattice metal layer and the first underlayer.
摘要翻译: 公开了一种半导体器件。 该装置包括基板; 覆盖衬底的第一金属层; 覆盖在第一金属层上的电介质层; 以及覆盖所述电介质层的第二金属层,其中所述第一金属层包括:第一体心立方晶格金属层; 第一底层,位于第一体心立方晶格金属层下面,其中第一底层是体心立方晶格的金属,包括钛(Ti),钨(W),钼(Mo)或铌(Nb); 以及在第一体心立方晶格金属层和第一底层之间的体心立方晶格的第一界面。