Methods of manufacturing an image sensor
    1.
    发明授权
    Methods of manufacturing an image sensor 有权
    图像传感器的制造方法

    公开(公告)号:US08119437B2

    公开(公告)日:2012-02-21

    申请号:US12458087

    申请日:2009-06-30

    IPC分类号: H01L31/0232

    摘要: The method of manufacturing an image sensor includes providing a semiconductor substrate including a first pixel region, first forming a first pattern on the first pixel region, first performing a reflow of the first pattern to form a sub-micro lens on the first pixel region, second forming a second pattern on the sub-micro lens, and second performing a reflow of the second pattern to form a first micro lens covering the sub-micro lens.

    摘要翻译: 制造图像传感器的方法包括提供包括第一像素区域的半导体衬底,首先在第一像素区域上形成第一图案,首先在第一像素区域上执行第一图案的回流以形成子微透镜, 在所述亚微透镜上形成第二图案,并且第二图案执行所述第二图案的回流以形成覆盖所述副微透镜的第一微透镜。

    Methods of manufacturing an image sensor
    2.
    发明申请
    Methods of manufacturing an image sensor 有权
    图像传感器的制造方法

    公开(公告)号:US20100009493A1

    公开(公告)日:2010-01-14

    申请号:US12458087

    申请日:2009-06-30

    IPC分类号: H01L31/18

    摘要: The method of manufacturing an image sensor includes providing a semiconductor substrate including a first pixel region, first forming a first pattern on the first pixel region, first performing a reflow of the first pattern to form a sub-micro lens on the first pixel region, second forming a second pattern on the sub-micro lens, and second performing a reflow of the second pattern to form a first micro lens covering the sub-micro lens.

    摘要翻译: 制造图像传感器的方法包括提供包括第一像素区域的半导体衬底,首先在第一像素区域上形成第一图案,首先在第一像素区域上执行第一图案的回流以形成子微透镜, 在所述亚微透镜上形成第二图案,并且第二图案执行所述第二图案的回流以形成覆盖所述副微透镜的第一微透镜。

    Image sensor and method of manufacturing the same
    3.
    发明授权
    Image sensor and method of manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号:US08334554B2

    公开(公告)日:2012-12-18

    申请号:US12380844

    申请日:2009-03-04

    IPC分类号: H01L31/062 H01L31/113

    摘要: An image sensor includes a first region of a substrate having photoelectric conversion elements formed therein, and includes a second region of the substrate outside of the first region. The image sensor includes a plurality of lenses, a plurality of embossing structures, and a protective layer. The lenses are formed over the first region. The embossing structures are formed over the second region, and the embossing structures are separated from each-other. The protective layer is formed over the lenses and the embossing structures that prevent crack propagation.

    摘要翻译: 图像传感器包括其中形成有光电转换元件的衬底的第一区域,并且包括在第一区域外部的衬底的第二区域。 图像传感器包括多个透镜,多个压花结构和保护层。 透镜形成在第一区域上。 压花结构形成在第二区域上,并且压花结构彼此分离。 保护层形成在透镜和防止裂纹扩展的压花结构之上。

    Image sensor and method of manufacturing the same
    4.
    发明申请
    Image sensor and method of manufacturing the same 有权
    图像传感器及其制造方法

    公开(公告)号:US20090224347A1

    公开(公告)日:2009-09-10

    申请号:US12380844

    申请日:2009-03-04

    IPC分类号: H01L31/0232

    摘要: An image sensor includes a first region of a substrate having photoelectric conversion elements formed therein, and includes a second region of the substrate outside of the first region. The image sensor includes a plurality of lenses, a plurality of embossing structures, and a protective layer. The lenses are formed over the first region. The embossing structures are formed over the second region, and the embossing structures are separated from each-other. The protective layer is formed over the lenses and the embossing structures that prevent crack propagation.

    摘要翻译: 图像传感器包括其中形成有光电转换元件的衬底的第一区域,并且包括在第一区域外部的衬底的第二区域。 图像传感器包括多个透镜,多个压花结构和保护层。 透镜形成在第一区域上。 压花结构形成在第二区域上,并且压花结构彼此分离。 保护层形成在透镜和防止裂纹扩展的压花结构之上。