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92 条记录 (耗时 0.026 秒)

    Perpendicular thin-film magnetic head
    1.
    发明授权
    Perpendicular thin-film magnetic head 失效
    垂直薄膜磁头

    公开(公告)号：US06195233B1

    公开(公告)日：2001-02-27

    申请号：US09520143

    申请日：2000-03-07

    申请人： Junichi Akiyama ,  Hiroaki Yoda

    发明人： Junichi Akiyama ,  Hiroaki Yoda

    IPC分类号： G11B5147

    CPC分类号： G11B5/1278 ,  G11B5/012 ,  G11B2005/0029

    摘要： Disclosed is a thin-film magnetic head comprising a ring-shaped magnetic core and a coil surrounded by the magnetic core, given that an inner circumferential length of the magnetic core surrounding the coil is Lc, a magnetic gap length is g, a magnetic gap depth is D, an average magnetic flux density (unit: T (tesla)) is Bav and an effective magnetic permeability of the magnetic core is &mgr;, Lc, g and D being determined in such a manner that a magnetomotive force I needed for recording, expressed by a following equation (1), becomes equal to or less than 0.1 A·T (Ampere·Turn): I = 2 ⁢ π ⁢ DBav μLog ⁢ { [ ( Lc + g ) + 2 ⁢ π ⁢ D ] / ( Lc + g ) } ( 1 ) where Log is a natural logarithm, and variables in the equation (1) are expressed in SI units.

    摘要翻译： 公开了一种薄膜磁头，其包括环形磁芯和被磁芯包围的线圈，假定围绕线圈的磁芯的内周长度为Lc，磁隙长度为g，磁隙为 深度为D，平均磁通密度（单位：T（特斯拉））为Bav，磁芯的有效磁导率为μ，Lc，g和D以使得记录所需的磁动势I得以确定 由下式（1）表示，变为等于或小于0.1 AT（Ampere.Turn）：其中Log是自然对数，式（1）中的变量以SI为单位表示。

    Thin film head
    2.
    发明授权
    Thin film head 有权
    薄膜头

    公开(公告)号：US06172858B2

    公开(公告)日：2001-01-09

    申请号：US09479651

    申请日：2000-01-07

    申请人： Hiroaki Yoda ,  Yuichi Ohsawa ,  Kohichi Tateyama ,  Reiko Kondoh ,  Toshihiko Ohta ,  Junichi Akiyama ,  Hitoshi Iwasaki

    发明人： Hiroaki Yoda ,  Yuichi Ohsawa ,  Kohichi Tateyama ,  Reiko Kondoh ,  Toshihiko Ohta ,  Junichi Akiyama ,  Hitoshi Iwasaki

    IPC分类号： G11B5127

    CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3912 ,  G11B5/3919 ,  G11B5/3932 ,  G11B5/3967 ,  G11B5/399 ,  G11B2005/0016 ,  G11B2005/0018 ,  G11B2005/3996 ,  Y10T29/49025

    摘要： The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films, a nonmagnetic film sandwiched between the magnetic films, and leads connected to the magnetoresistance effect element wherein the width of one of the magnetic films, which essentially responds to a signal magnetic field, is not more than a distance between leads. The present invention provides a thin film head having a magnetoresistance effect element which includes at least two magnetic films and a nonmagnetic film sandwiched between the magnetic films, which makes use of a change in magnetic resistance caused by spin-dependent scattering, wherein at least a portion of one magnetic films, which essentially respond to a signal magnetic field extends in a direction same as that of the signal magnetic field.

    摘要翻译： 本发明提供了一种具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜，夹在磁性膜之间的非磁性膜和连接到磁阻效应元件的引线，其中一个磁性膜的宽度基本上 响应信号磁场，不超过引线之间的距离。 本发明提供了具有磁阻效应元件的薄膜头，该磁阻效应元件包括至少两个磁性膜和夹在磁性膜之间的非磁性膜，其利用由自旋依赖性散射引起的磁阻的变化，其中至少一个 基本上响应于信号磁场的一个磁性膜的部分在与信号磁场的方向相同的方向上延伸。

    Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof
    3.
    发明授权
    Magnetoresistive head with antiferromagnetic sublayers interposed between first and second spin-valve units to exchange bias inner magnetic films thereof 失效
    具有反铁磁性子层的磁阻头插入在第一和第二自旋阀单元之间以交换其内部磁性膜

    公开(公告)号：US5576915A

    公开(公告)日：1996-11-19

    申请号：US472487

    申请日：1995-06-07

    申请人： Junichi Akiyama ,  Hiroaki Yoda ,  Yuichi Ohsawa ,  Hitoshi Iwasaki

    发明人： Junichi Akiyama ,  Hiroaki Yoda ,  Yuichi Ohsawa ,  Hitoshi Iwasaki

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3903 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3954 ,  G11B5/399 ,  G11B2005/3996

    摘要： A magnetoresistive head includes an antiferromagnetic portion interposed between first and second spin-valve units. Sense current supply directions through the first and second spin-valve units are perpendicular to a head facing surface of a magnetic recording medium. The first spin-valve unit is formed of a first inner magnetic film, a first outer magnetic film and a nonmagnetic film interposed between and in direct physical contact with the first inner magnetic film and the first outer magnetic film. The second spin-valve unit is formed of a second inner magnetic film, a second outer magnetic film and a nonmagnetic film interposed between and in direct physical contact with the second inner magnetic film and the second outer magnetic film. The antiferromagnetic portion is formed of a first antiferromagnetic sublayer and a second antiferromagnetic sublayer laminated on the first antiferromagnetic sublayer. The first antiferromagnetic sublayer is in contact with the first inner magnetic film to apply a first exchange bias magnetic field to the first inner magnetic film in a direction perpendicular to the head facing surface of the magnetic recording medium. The second antiferromagnetic sublayer is in contact with the second inner magnetic film to apply a second exchange bias magnetic field to the second inner magnetic film in a direction perpendicular to the surface of the magnetic recording medium. The second exchange bias magnetic field has a polarity opposite to that of the first exchange bias magnetic field.

    摘要翻译： 磁阻头包括介于第一和第二自旋阀单元之间的反铁磁部分。 通过第一和第二自旋阀单元的感测电流供给方向垂直于磁记录介质的朝向头部的表面。 第一自旋阀单元由第一内部磁性膜，第一外部磁性膜和介于第一内部磁性膜和第一外部磁性膜直接物理接触之间的非磁性膜形成。 第二自旋阀单元由第二内部磁性膜，第二外部磁性膜和介于第二内部磁性膜和第二外部磁性膜直接物理接触之间的非磁性膜形成。 反铁磁部分由层叠在第一反铁磁性子层上的第一反铁磁性子层和第二反铁磁性层构成。 第一反铁磁性子层与第一内部磁性膜接触，以在垂直于磁记录介质的朝向磁头的表面的方向上向第一内部磁性膜施加第一交换偏置磁场。 第二反铁磁子层与第二内磁性膜接触，以在垂直于磁记录介质的表面的方向上向第二内磁膜施加第二交换偏置磁场。 第二交换偏置磁场的极性与第一交换偏置磁场的极性相反。

    Magneto-resistive head
    4.
    发明授权
    Magneto-resistive head 失效
    磁阻头

    公开(公告)号：US5461527A

    公开(公告)日：1995-10-24

    申请号：US340448

    申请日：1994-11-14

    申请人： Junichi Akiyama ,  Yuichi Ohsawa ,  Hitoshi Iwasaki ,  Reiko Kondoh ,  Kohichi Tateyama ,  Toshihiko Ohta ,  Hiroaki Yoda

    发明人： Junichi Akiyama ,  Yuichi Ohsawa ,  Hitoshi Iwasaki ,  Reiko Kondoh ,  Kohichi Tateyama ,  Toshihiko Ohta ,  Hiroaki Yoda

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3932 ,  G11B5/399

    摘要： A member having a first and a second magnetic layer are magnetostatically coupled and laminated and the first magnetic layer formed on a magneto-resistive element, for creating the exchange coupling on the magneto-resistive element and the first magnetic layer. The member is formed by sequentially laminating a first ferromagnetic layer magnetized in a sense along the direction of the longitudinal bias of the magneto-resistive element, non-magnetic layer and second ferromagnetic layer magnetized in a direction opposite to the magnetized direction of the first ferromagnetic layer, for example.

    摘要翻译： 具有第一和第二磁性层的构件被静磁耦合和层叠，并且第一磁性层形成在磁阻元件上，用于在磁阻元件和第一磁性层上产生交换耦合。 该构件通过沿着磁阻元件的方向磁化的第一铁磁层顺序地层叠，非磁性层和第二铁磁层沿与第一铁磁体的磁化方向相反的方向被磁化的方向 层，例如。

    Thin-film magnetic head
    5.
    发明授权
    Thin-film magnetic head 失效
    用于磁性写/读设备的薄膜磁头

    公开(公告)号：US06285528B1

    公开(公告)日：2001-09-04

    申请号：US09520144

    申请日：2000-03-07

    申请人： Junichi Akiyama ,  Hiroaki Yoda

    发明人： Junichi Akiyama ,  Hiroaki Yoda

    IPC分类号： G11B5127

    CPC分类号： G11B5/1278 ,  G11B5/012 ,  G11B2005/0029

    摘要： A thin-film magnetic head including a ring-shaped magnetic core and a coil surrounded by the magnetic core, given that an inner circumferential length of the magnetic core surrounding the coil is Lc, a magnetic gap length is g, a magnetic gap depth is D, an average magnetic flux density (unit: T (tesla)) is Bav and an effective magnetic permeability of the magnetic core is &mgr;, wherein Lc, g and D are determined in such a manner that a magnetomotive force I needed for recording, expressed by a following equation (1), becomes equal to or less than 0.1 A·T (Ampere·Turn): I = 2 ⁢ π ⁢   ⁢ DBav μLog ⁢ { [ ( Lc + g ) + 2 ⁢ π ⁢   ⁢ D ] / ( Lc + g ) } (1) where Log is a natural logarithm, and variables in the equation (1) are expressed in SI units.

    摘要翻译： 由于围绕线圈的磁芯的内周长为Lc，磁隙长度为g，磁隙深度为 D，平均磁通密度（单位：T（特斯拉））为Bav，磁芯的有效导磁率为μ，其中，Lc，g和D以使得记录所需的磁动势I， 由下式（1）表示，变为等于或小于0.1 AT（Ampere.Turn）：其中Log是自然对数，式（1）中的变量以SI单位表示。