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公开(公告)号:US20140332959A1
公开(公告)日:2014-11-13
申请号:US13990816
申请日:2012-09-21
申请人: Junichi Hamaguchi , Shuji Kodaira , Yuta Sakamoto , Akifumi Sano , Koukichi Kamada , Yoshiyuki Kadokura , Joji Hiroishi , Yukinobu Numata , Koji Suzuki
发明人: Junichi Hamaguchi , Shuji Kodaira , Yuta Sakamoto , Akifumi Sano , Koukichi Kamada , Yoshiyuki Kadokura , Joji Hiroishi , Yukinobu Numata , Koji Suzuki
IPC分类号: H01L21/768 , H01L23/532 , H01L23/528
CPC分类号: H01L21/76846 , H01L21/2855 , H01L21/76843 , H01L21/7685 , H01L21/76871 , H01L21/76876 , H01L21/76877 , H01L23/528 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要: A method of manufacturing a semiconductor device includes: a groove portion formation step of forming a groove portion in a base; a barrier layer formation step of forming a barrier layer that covers at least an inner wall surface of the groove portion; a seed layer formation step of forming a seed layer that covers the barrier layer; and a burial step of burying a conductive material in an inside region of the seed layer, wherein the seed layer is made of Cu, and the conductive material is made of Cu.
摘要翻译: 一种制造半导体器件的方法包括:槽部形成步骤,在基底中形成沟槽部; 阻挡层形成步骤,形成覆盖所述槽部的至少内壁面的阻挡层; 种子层形成步骤,形成覆盖所述阻挡层的种子层; 以及在种子层的内部区域埋设导电材料的埋置工序,其中种子层由Cu制成,导电材料由Cu制成。