公开(公告)号：US20170301385A1

公开(公告)日：2017-10-19

申请号：US15453548

申请日：2017-03-08

申请人： Junwei LIU ,  Kai Chang ,  Shuai-Hua JI ,  Xi Chen ,  Liang Fu

发明人： Junwei LIU ,  Kai Chang ,  Shuai-Hua JI ,  Xi Chen ,  Liang Fu

IPC分类号： G11C11/22 ,  H01L27/115 ,  H01L49/02

CPC分类号： G11C11/221 ,  G11C11/22 ,  G11C11/2273 ,  G11C11/2275 ,  H01L27/11507 ,  H01L28/00 ,  H01L28/60

摘要： A memory device includes a semiconductor layer with an in-plane polarization component switchable between a first direction and a second direction. A writing electrode is employed to apply a writing voltage to the semiconductor layer to change the in-plane polarization component between the first direction and the second direction. A reading electrode is employed to apply a reading voltage to the semiconductor layer to measure a tunneling current substantially perpendicular to the polarization direction of the in-plane polarization component. The directions of the reading voltage and the writing voltage are substantially perpendicular to each other. Therefore, the reading process is non-destructive. Thin films (e.g., one unit cell thick) of ferroelectric material can be used in the memory device to increase the miniaturization of the device.