公开(公告)号：US20180012768A1

公开(公告)日：2018-01-11

申请号：US15440043

申请日：2017-02-23

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Yosuke SATO ,  Akio Ul ,  Itsuko Sakai

IPC分类号： H01L21/3065 ,  H01J37/32 ,  H01L21/67

摘要： A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing pat introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.