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公开(公告)号：US20220299221A1
公开(公告)日：2022-09-22
申请号：US17465139
申请日：2021-09-02
发明人： Akio UI , Yosuke SATO , Shotaro OKA
摘要： A plasma disinfection device of an embodiment includes: an electrical dust collector including a plurality of heat exchange fins, a needle electrode which causes a discharge in a gas flow flowing between the plurality of heat exchange fins, and a direct-current power supply electrically connected to the needle electrode; and a plasma generator including a dielectric provided on each of facing surfaces of the plurality of heat exchange fins, a discharge electrode provided to be exposed on a surface of the dielectric and arranged to cross a direction of flow of the gas flow, and an alternating-current power supply electrically connected to the discharge electrode.
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公开(公告)号：US20160027619A1
公开(公告)日：2016-01-28
申请号：US14804913
申请日：2015-07-21
发明人： Yosuke SATO , AKIO UI , HISATAKA HAYASHI
CPC分类号： H01J37/32577 , C23C16/50 , H01J37/32009 , H01J37/32091 , H01J37/32422 , H01J37/3244 , H01J37/32706 , H01J37/32715 , H01J2237/20214 , H01J2237/3341 , H01L21/3065
摘要： A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.
摘要翻译： 实施例的等离子体处理装置包括室，引入部，基板电极，高频电源，低频电源和切换机构。 引入部分将工艺气体引入室中。 衬底电极设置在腔室中，衬底直接或间接安装在衬底电极上，并且衬底电极包括交替布置的第一和第二电极元件。 高频电源输出40MHz或更高的高频电压，用于电离工艺气体以产生等离子体。 低频电源输出20MHz以下的低频电压，从等离子体引出离子。 切换机构将低频电压交替地施加到第一和第二电极元件。
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公开(公告)号：US20180078950A1
公开(公告)日：2018-03-22
申请号：US15440981
申请日：2017-02-23
发明人： Yosuke SATO , Akio UI
CPC分类号： B03C3/47 , B03C3/017 , B03C3/08 , B03C3/12 , B03C3/155 , B03C3/368 , B03C3/41 , B03C3/64 , B03C2201/06 , B03C2201/10 , F24F3/166 , F24F2003/1682
摘要： A dust collector in an embodiment includes: a discharge electrode having tips; a counter electrode including a plurality of conductor plates each having an end opposed to the discharge electrode and arrange side by side in a plate thickness direction; and a power supply that applies voltage between the discharge electrode and the counter electrode. The counter electrode has a first region closer to the tips and a second region farther from the tips than is the first region, and at least one of an interval between or a distance from the tips or a shape of at least part of the ends in the first region is different from the interval, the distance, or the shape in the second region.
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公开(公告)号：US20170186589A1
公开(公告)日：2017-06-29
申请号：US15461630
申请日：2017-03-17
发明人： Yosuke SATO , Akio UI , Hisataka HAYASHI
IPC分类号： H01J37/32 , H01L21/3065
CPC分类号： H01J37/32577 , C23C16/50 , H01J37/32009 , H01J37/32091 , H01J37/32422 , H01J37/3244 , H01J37/32706 , H01J37/32715 , H01J2237/20214 , H01J2237/3341 , H01L21/3065
摘要： A plasma processing apparatus of an embodiment includes a chamber, an introducing part, a substrate electrode, a high-frequency power source, a low-frequency power source, and a switching mechanism. The introducing part introduces a process gas into the chamber. The substrate electrode is disposed in the chamber, a substrate is directly or indirectly mounted on the substrate electrode, and the substrate electrode includes a first and a second electrode elements alternately arranged. The high-frequency power source outputs a high-frequency voltage of 40 MHz or more for ionizing the process gas to generate plasma. The low-frequency power source outputs a low-frequency voltage of 20 MHz or less for introducing ions from the plasma. The switching mechanism applies the low-frequency voltage alternately to the first and the second electrode elements.
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公开(公告)号：US20170007958A1
公开(公告)日：2017-01-12
申请号：US15204229
申请日：2016-07-07
发明人： Akio UI , Yosuke SATO , Masato AKITA
CPC分类号： B01D53/32 , A61L9/015 , A61L9/16 , A61L9/22 , A61L2209/111 , A61L2209/212 , B01D53/323 , B01D53/346 , B01D53/8609 , B01D53/8625 , B01D53/8668 , B01D53/8675 , B01D53/885 , B01D2255/20707 , B01D2257/106 , B01D2257/406 , B01D2257/7027 , B01D2257/704 , B01D2257/708 , B01D2259/818
摘要： A gas processing apparatus of an embodiment has stacks, gas flow paths, an AC power supply, and a flow limiter. The stacks are away from each other and in parallel. Each stack includes a dielectric substrate and a first to a third electrode. The first and second electrodes are respectively disposed on the first and second main surfaces of the dielectric substrate. The third electrode is disposed inside the dielectric substrates. The gas flow paths supply a target gas between the stacks, The AC power supply applies an AC voltage across the first and second electrodes and the third electrodes, so as to generate plasma induced flows of the target gas between the dielectric substrates. The flow limiter is disposed on a downstream side of the stacks and limits a flow rate of the target gas.
摘要翻译： 实施例的气体处理装置具有堆叠，气体流路，AC电源和流量限制器。 堆叠彼此远离并且平行。 每个堆叠包括电介质基板和第一至第三电极。 第一和第二电极分别设置在电介质基板的第一和第二主表面上。 第三电极设置在电介质基板的内部。 气体流动路径在堆叠之间提供目标气体.AC电源施加跨越第一和第二电极和第三电极的AC电压，以便在电介质基板之间产生目标气体的等离子体感应流。 流量限制器设置在堆叠的下游侧并限制目标气体的流量。
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公开(公告)号：US20180012768A1
公开(公告)日：2018-01-11
申请号：US15440043
申请日：2017-02-23
发明人： Yosuke SATO , Akio Ul , Itsuko Sakai
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/67
摘要： A plasma processing, apparatus of an embodiment includes a chamber, an introducing part, a first power source, a holder, an electrode, and a second power source. The introducing pat introduces gas into the chamber. The first power source outputs a first voltage for generating ions from the gas. The holder holds a substrate. The electrode is opposite to the ions across the substrate, and has a surface not parallel to the substrate. The second power source applies a second voltage to the electrode. The second voltage has a frequency lower than the frequency of the first voltage and Introduces die ions to the substrate.
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公开(公告)号：US20220087001A1
公开(公告)日：2022-03-17
申请号：US17186423
申请日：2021-02-26
发明人： Yosuke SATO , Akio UI , Masato AKITA , Shotaro OKA , Tomonao TAKAMATSU , Hiroyuki YASUI , Shinya MATSUDA
IPC分类号： H05H1/24
摘要： A dielectric barrier discharge electrode of an embodiment has: a dielectric; a first electrode provided to be exposed on the dielectric; a second electrode provided to be covered by the dielectric; and a third electrode provided to be covered by the dielectric in a neighborhood of the first electrode.
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公开(公告)号：US20190282722A1
公开(公告)日：2019-09-19
申请号：US16111396
申请日：2018-08-24
发明人： Akio UI , Masato AKITA , Yosuke SATO
IPC分类号： A61L9/22 , B01D53/32 , B01D53/66 , B01D53/82 , B01D53/86 , B01D53/75 , B01D53/34 , B01D53/04 , A61L9/014
摘要： A gas processing apparatus of an embodiment includes a gas processing unit, a flow forming unit, an AC power supply, and first and second filters. The gas processing unit includes a plurality of stacks each having a dielectric substrate, a first to a third electrode. The flow forming unit forms a flow of a target gas flowing toward the gas processing unit. The AC power supply applies an AC voltage across the first, second electrodes and the third electrode so as to generate plasma induced flows of the target gas between the dielectric substrates. The first filter is disposed at an upstream of the gas processing unit, and removes ozone. The second filter is disposed at a downstream of the gas processing unit, and removes ozone.
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