公开(公告)号：US20130273744A1

公开(公告)日：2013-10-17

申请号：US13788121

申请日：2013-03-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroaki YAMADA ,  Hiroyasu IIMORI ,  Junichi IGARASHI

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/31111 ,  H01L21/67086 ,  H01L21/67248

Abstract: A method of processing a substrate is disclosed. The method uses a substrate processing apparatus including a processing tank that retains a processing liquid and that accommodates a workpiece substrate, a recirculation system recirculating the processing liquid into the processing tank by supplying the processing liquid heated by a recirculation system heater from a lower portion of the processing tank and collecting the processing liquid from an upper portion of the processing tank, a plurality of heaters distributed on an upper portion and a lower portion of the processing tank to heat the processing liquid. The method includes setting a first temperature setpoint to a heater located on the upper portion of the processing tank, and setting a second temperature setpoint lower than the first temperature setpoint to a heater located on the lower portion of the processing tank.

Abstract translation: 公开了一种处理衬底的方法。 该方法使用包括处理罐的基板处理装置，该处理槽保持处理液并且容纳工件基板，再循环系统通过从再循环系统加热器的下部供应处理液而将处理液体再循环到处理槽中 处理槽并从处理槽的上部收集处理液，分配在处理槽的上部和下部的多个加热器以加热处理液。 该方法包括将第一温度设定点设置到位于处理槽上部的加热器，以及将低于第一温度设定点的第二温度设定点设定在位于处理槽下部的加热器。