公开(公告)号：US20130273744A1

公开(公告)日：2013-10-17

申请号：US13788121

申请日：2013-03-07

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroaki YAMADA ,  Hiroyasu IIMORI ,  Junichi IGARASHI

IPC: H01L21/324

CPC classification number: H01L21/324 ,  H01L21/31111 ,  H01L21/67086 ,  H01L21/67248

Abstract: A method of processing a substrate is disclosed. The method uses a substrate processing apparatus including a processing tank that retains a processing liquid and that accommodates a workpiece substrate, a recirculation system recirculating the processing liquid into the processing tank by supplying the processing liquid heated by a recirculation system heater from a lower portion of the processing tank and collecting the processing liquid from an upper portion of the processing tank, a plurality of heaters distributed on an upper portion and a lower portion of the processing tank to heat the processing liquid. The method includes setting a first temperature setpoint to a heater located on the upper portion of the processing tank, and setting a second temperature setpoint lower than the first temperature setpoint to a heater located on the lower portion of the processing tank.

Abstract translation: 公开了一种处理衬底的方法。 该方法使用包括处理罐的基板处理装置，该处理槽保持处理液并且容纳工件基板，再循环系统通过从再循环系统加热器的下部供应处理液而将处理液体再循环到处理槽中 处理槽并从处理槽的上部收集处理液，分配在处理槽的上部和下部的多个加热器以加热处理液。 该方法包括将第一温度设定点设置到位于处理槽上部的加热器，以及将低于第一温度设定点的第二温度设定点设定在位于处理槽下部的加热器。

公开(公告)号：US20170154894A1

公开(公告)日：2017-06-01

申请号：US15185510

申请日：2016-06-17

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Yasuhito YOSHIMIZU ,  Hiroaki YAMADA ,  Yoshinori KITAMURA ,  Yoshihiro OGAWA

IPC: H01L27/115 ,  H01L29/06 ,  H01L21/8234

CPC classification number: H01L27/11582 ,  H01L21/02164 ,  H01L21/02282 ,  H01L21/31111 ,  H01L21/7682 ,  H01L21/823475 ,  H01L21/823481 ,  H01L29/0649

Abstract: According to one embodiment, a method of manufacturing a semiconductor device includes: forming a first film including a conductive material above a semiconductor substrate; forming a second film on the first film; forming a third film including a conductive material on the second film; exposing a part of the second film; and wet etching the second film. In the wet etching, a first and second insulation films are deposited on side surfaces of the first and third films, and part of a space between the first and third films is blocked by the first and second insulation films to form an air gap between the first and third films.

公开(公告)号：US20150200116A1

公开(公告)日：2015-07-16

申请号：US14466391

申请日：2014-08-22

Applicant: KABUSHIKI KAISHA TOSHIBA

Inventor： Hiroaki YAMADA ,  Yoshihiro OGAWA ,  Takeshi HIZAWA

IPC: H01L21/67

CPC classification number: H01L21/67086 ,  B08B3/14 ,  B81C2201/0138 ,  C23F1/26 ,  H01L21/31111 ,  H01L22/10 ,  Y10T137/0318

Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

Abstract translation: 药液处理装置包括处理室; 化学液体供给单元，其构造成将化学液体循环进料到所述处理室中; 和修改单元。 修改单元当使用其效果随化学液体排出时间而变化的化学液体被配置为基于化学液体排出时间计算化学液体的影响的变化，并且被配置为改变化学液体 基于计算出的化学液体的影响的变化和化学液体排放时间的累积时间，每个处理室的排出时间。