公开(公告)号：US10325902B2

公开(公告)日：2019-06-18

申请号：US15247541

申请日：2016-08-25

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ryuta Arai ,  Hidetoshi Asahara ,  Makoto Tsuzuki

IPC分类号： H01L29/66 ,  H01L21/332 ,  H01L27/02 ,  H01L27/06 ,  H01L49/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/87

摘要： A semiconductor device includes a first bidirectional diode of a ring shape surrounding a central region and including a first connection section and a second connection section which is provided to the inner side of the ring shape from the first connection section, a semiconductor element in the central region including a first semiconductor element electrode, a second semiconductor element electrode, and a control electrode, the first semiconductor element electrode electrically connected to the first connection section and the second semiconductor element electrode electrically connected to the control electrode, a first resistor including a first resistor electrode and a second resistor electrode, the first resistor electrode electrically connected to the second connection section and the control electrode, a second bidirectional diode electrically connected to the second resistor electrode and to the second semiconductor element electrode, and a second resistor element electrically connected to the second resistor electrode.