公开(公告)号：US11171216B2

公开(公告)日：2021-11-09

申请号：US15911248

申请日：2018-03-05

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Hidetoshi Asahara ,  Akihiro Tanaka ,  Toru Shono

IPC分类号： H01L29/40 ,  H01L29/78 ,  H01L23/532 ,  H02J7/00

摘要： According to an embodiment, a semiconductor device includes a first semiconductor layer, a first switching element, a second switching element, and a conductor. The conductor is provided at least in part on the first semiconductor layer and located between the first switching element and the second switching element in a first direction.

公开(公告)号：US10355124B1

公开(公告)日：2019-07-16

申请号：US16032126

申请日：2018-07-11

申请人： Kabushiki Kaisha Toshiba ,  Toshiba Electronic Devices & Storage Corporation

发明人： Hidetoshi Asahara ,  Akihiro Tanaka

IPC分类号： H01L27/082 ,  H01L29/739 ,  H01L29/732 ,  H01L29/78 ,  H01L29/08 ,  H01L29/10 ,  H01L29/06 ,  H03K17/687 ,  H01L27/088 ,  H01L29/66

摘要： A semiconductor device of an embodiment includes a semiconductor layer having a first plane and a second plane; a first conductivity type first semiconductor region; a first conductivity type second semiconductor region between the first semiconductor region and the first plane; a second conductivity type third semiconductor region and a fourth semiconductor region between the second semiconductor region and the first plane; a first conductivity type fifth semiconductor region between the third semiconductor region and the first plane; a first conductivity type sixth semiconductor region type between the fourth semiconductor region and the first plane; a first conductivity type seventh semiconductor region between the third semiconductor region and the fourth semiconductor region, between the first semiconductor region and the first plane, and having impurity concentration higher than the first conductivity type impurity concentration of the second semiconductor region; first and a second gate electrode; first and second gate insulating film.

公开(公告)号：US10325902B2

公开(公告)日：2019-06-18

申请号：US15247541

申请日：2016-08-25

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Ryuta Arai ,  Hidetoshi Asahara ,  Makoto Tsuzuki

IPC分类号： H01L29/66 ,  H01L21/332 ,  H01L27/02 ,  H01L27/06 ,  H01L49/02 ,  H01L29/10 ,  H01L29/78 ,  H01L29/87

摘要： A semiconductor device includes a first bidirectional diode of a ring shape surrounding a central region and including a first connection section and a second connection section which is provided to the inner side of the ring shape from the first connection section, a semiconductor element in the central region including a first semiconductor element electrode, a second semiconductor element electrode, and a control electrode, the first semiconductor element electrode electrically connected to the first connection section and the second semiconductor element electrode electrically connected to the control electrode, a first resistor including a first resistor electrode and a second resistor electrode, the first resistor electrode electrically connected to the second connection section and the control electrode, a second bidirectional diode electrically connected to the second resistor electrode and to the second semiconductor element electrode, and a second resistor element electrically connected to the second resistor electrode.

公开(公告)号：US09048215B2

公开(公告)日：2015-06-02

申请号：US14014260

申请日：2013-08-29

申请人： KABUSHIKI KAISHA TOSHIBA

发明人： Hidetoshi Asahara

IPC分类号： H01L29/78 ,  H01L29/40 ,  H03K17/041

CPC分类号： H01L29/407 ,  H01L29/0878 ,  H01L29/42376 ,  H01L29/7813 ,  H03K17/04106

摘要： A semiconductor device includes a first layer of a first-type, a second layer of a second-type formed on the first layer, a third layer of the first type formed on the second layer, a first electrode connected to the second and third layers, a second electrode connected to the first layer, a third electrode embedded in a trench formed through the third and second layers and into the first layer, a fourth electrode embedded in the trench below the third electrode, and an insulating layer formed in the trench around the fourth electrode. The first layer includes a first region that is in contact with the insulating layer and at which a concentration of the first-type dopant is lower than the concentration at a second region that is formed around the first region.

摘要翻译： 一种半导体器件包括形成在第一层上的第一类第一层，第二层第二层，形成在第二层上的第一类型的第三层，连接到第二层和第三层的第一电极 ，连接到第一层的第二电极，嵌入在通过第三层和第二层形成并进入第一层的沟槽中的第三电极，嵌入在第三电极下面的沟槽中的第四电极，以及形成在沟槽中的绝缘层 围绕第四电极。 第一层包括与绝缘层接触并且第一类型掺杂剂的浓度低于形成在第一区域周围的第二区域处的浓度的第一区域。