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公开(公告)号：US10533248B2
公开(公告)日：2020-01-14
申请号：US15271911
申请日：2016-09-21
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Tooru Komatsu , Nobuaki Nakashima
Abstract: The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.
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2.发明授权公开(公告)号：US10473597B2
公开(公告)日：2019-11-12
申请号：US16139281
申请日：2018-09-24
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Yukihiro Fukuta , Yoshitaka Adachi , Nobuaki Nakashima , Koichi Nittoh
Abstract: A neutron grid, comprises: a grid including: a plurality of spacers through which at least a part of first neutrons from a target passes; and a plurality of absorbers to absorb at least a part of second neutrons scattered thorough the target, the spacers and the absorbers being alternately arranged along a first direction and extending along a second direction intersecting with the first direction; and a pair of covers through which at least a part of the first neutrons and at least a part of the second neutrons pass, sandwiching the grid along a third direction intersecting with the first and second directions. A thermal expansion coefficient difference between one of the spacers and one of the absorbers is ±9×10−6/° C. or less, or Young's modulus of the spacer is 100 GPa or more.
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公开(公告)号：US11957052B2
公开(公告)日：2024-04-09
申请号：US16256276
申请日：2019-01-24
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Shinichi Yamamoto , Masami Okamura , Nobuaki Nakashima , Masanori Mizobe
CPC classification number: H10N10/01 , B22F3/15 , B22F3/24 , B22F9/04 , C22C12/00 , C22C30/04 , H10N10/853
Abstract: According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 μm or more is present at any vertex of chips of the thermoelectric materials.
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Patent Agency Ranking
公开(公告)号：US11220740B2
公开(公告)日：2022-01-11
申请号：US16713978
申请日：2019-12-13
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Tooru Komatsu , Nobuaki Nakashima
Abstract: The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.
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公开(公告)号：US11198933B2
公开(公告)日：2021-12-14
申请号：US16713957
申请日：2019-12-13
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Tooru Komatsu , Nobuaki Nakashima
Abstract: The manufacturing cost of a sputtering target is reduced and the impurity concentration of the manufactured sputtering target is also reduced. A method of manufacturing a sputtering target includes: surface-treating at least one of a used sputtering target and a scrap material; melting at least one of the used sputtering target and the scrap material after the surface treatment to form an ingot; and manufacturing a sputtering target by subjecting the ingot to forging, rolling, heat treating, and machining.
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公开(公告)号：US20200028059A1
公开(公告)日：2020-01-23
申请号：US16256276
申请日：2019-01-24
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Shinichi Yamamoto , Masami Okamura , Nobuaki Nakashima , Masanori Mizobe
Abstract: According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 μm or more is present at any vertex of chips of the thermoelectric materials.
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7.再颁专利公开(公告)号：USRE47788E1
公开(公告)日：2019-12-31
申请号：US16025680
申请日：2018-07-02
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Nobuaki Nakashima , Takashi Sano
IPC: C23C14/34
Abstract: According to an embodiment, two or more sets of knead forging are performed where one set is cold forging processes in directions parallel to and perpendicular to a thickness direction of a columnar titanium material. The titanium material is heated to a temperature of 700° C. or more to induce recrystallization, and thereafter, two or more sets of knead forging are performed where one set is the cold forging processes in the directions parallel to and perpendicular to the thickness direction. Further, the titanium material is cold rolled, and is heat-treated to a temperature of 300° C. or more.
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8.发明申请公开(公告)号：US20190025230A1
公开(公告)日：2019-01-24
申请号：US16139281
申请日：2018-09-24
Applicant: KABUSHIKI KAISHA TOSHIBA , TOSHIBA MATERIALS CO., LTD.
Inventor： Yukihiro Fukuta , Yoshitaka Adachi , Nobuaki Nakashima , Koichi Nittoh
Abstract: A neutron grid, comprises: a grid including: a plurality of spacers through which at least a part of first neutrons from a target passes; and a plurality of absorbers to absorb at least a part of second neutrons scattered thorough the target, the spacers and the absorbers being alternately arranged along a first direction and extending along a second direction intersecting with the first direction; and a pair of covers through which at least a part of the first neutrons and at least a part of the second neutrons pass, sandwiching the grid along a third direction intersecting with the first and second directions. A thermal expansion coefficient difference between one of the spacers and one of the absorbers is ±9×10−6/° C. or less, or Young's modulus of the spacer is 100 GPa or more.
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