公开(公告)号：US10395879B2

公开(公告)日：2019-08-27

申请号：US14554264

申请日：2014-11-26

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Materials Co., Ltd.

Inventor： Shinichi Yamamoto ,  Kayo Nakano ,  Hiromichi Horie

IPC: C22C27/04 ,  H01J1/144 ,  H01J23/05 ,  H01J61/073 ,  B22F5/12 ,  C22C1/04 ,  C22C1/10 ,  C22C32/00

Abstract: According to one embodiment, a tungsten alloy includes 0.1 to 5 wt % of Zr in terms of ZrC.

公开(公告)号：US09834830B2

公开(公告)日：2017-12-05

申请号：US14309025

申请日：2014-06-19

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Materials Co., Ltd.

Inventor： Shinichi Yamamoto ,  Kayo Nakano ,  Hiromichi Horie ,  Takashi Sano ,  Yoshiko Minami ,  Satoshi Yamaguchi

IPC: C22C27/04 ,  B22F3/10 ,  C22C1/04 ,  C22C43/00 ,  H01J23/05 ,  C22F1/18

CPC classification number: C22C27/04 ,  B22F3/1007 ,  C22C1/045 ,  C22C43/00 ,  C22F1/18 ,  H01J23/05

Abstract: According to one embodiment, a tungsten alloy includes a W component and a Hf component including HfC. A content of the Hf component in terms of HfC is 0.1 wt % or more and 3 wt % or less.

公开(公告)号：US11957052B2

公开(公告)日：2024-04-09

申请号：US16256276

申请日：2019-01-24

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Shinichi Yamamoto ,  Masami Okamura ,  Nobuaki Nakashima ,  Masanori Mizobe

IPC: H10N10/01 ,  B22F3/15 ,  B22F3/24 ,  B22F9/04 ,  C22C12/00 ,  C22C30/04 ,  H10N10/853

CPC classification number: H10N10/01 ,  B22F3/15 ,  B22F3/24 ,  B22F9/04 ,  C22C12/00 ,  C22C30/04 ,  H10N10/853

Abstract: According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 μm or more is present at any vertex of chips of the thermoelectric materials.

公开(公告)号：US10998157B2

公开(公告)日：2021-05-04

申请号：US16504485

申请日：2019-07-08

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Shinichi Yamamoto ,  Kayo Nakano ,  Hiromichi Horie

IPC: C22C27/04 ,  H01J1/144 ,  B22F5/12 ,  C22C1/04 ,  C22C1/10 ,  C22C32/00 ,  H01J23/05 ,  H01J61/073

Abstract: It is an object to provide a tungsten alloy exhibiting characteristics equal to or higher in characteristics than those of a thorium-containing tungsten alloy, without using thorium which is a radioactive material, and a discharge lamp, a transmitting tube, and a magnetron using the tungsten alloy. According to the present invention, a tungsten alloy includes 0.1 to 5 wt % of Zr in terms of ZrC.

公开(公告)号：US20200028059A1

公开(公告)日：2020-01-23

申请号：US16256276

申请日：2019-01-24

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Shinichi Yamamoto ,  Masami Okamura ,  Nobuaki Nakashima ,  Masanori Mizobe

IPC: H01L35/34 ,  B22F3/15 ,  H01L35/18 ,  C22C12/00 ,  C22C30/04 ,  B22F9/04 ,  B22F3/24

Abstract: According to one embodiment, a thermoelectric material are provided. The thermoelectric material includes a sintered body formed of p-type and n-type thermoelectric materials for the thermoelectric conversion element. The thermoelectric materials have a MgAgAs type crystal structure as a main phase. An area ratio of internal defects of the thermoelectric materials for one thermoelectric conversion element is 10% or less in terms of a total area ratio of defective portions in a scanning surface according to ultrasonic flaw detection in a thickness direction of the thermoelectric material. No defect having a length of 800 μm or more is present at any vertex of chips of the thermoelectric materials.

公开(公告)号：US10163600B2

公开(公告)日：2018-12-25

申请号：US15409298

申请日：2017-01-18

Applicant: Kabushiki Kaisha Toshiba ,  Toshiba Materials Co., Ltd.

Inventor： Shinichi Yamamoto

IPC: H01J35/10 ,  H01J35/26 ,  A61B6/03 ,  G01N23/046 ,  A61B6/00

Abstract: A rotatable anode target for an X-ray tube (1) of the present invention includes a metallic disc (2) which includes a first crystal structure; a metallic cylinder (3) which is joined with the metallic disc and includes a second crystal structure, where a first average aspect ratio of first crystal grains positioning at a first region within 2 mm from an interface between the metallic disc and the metallic cylinder is less than 2, and a second average aspect ratio of second crystal grains positioning at a second region within 2 mm from the interface is 2 or more and 8 or less. It is thereby possible to provide an X-ray tube target which has high heat release performance and where thermal deformation is difficult to occur.

公开(公告)号：US10167536B2

公开(公告)日：2019-01-01

申请号：US15784416

申请日：2017-10-16

Applicant: KABUSHIKI KAISHA TOSHIBA ,  TOSHIBA MATERIALS CO., LTD.

Inventor： Shinichi Yamamoto ,  Kayo Nakano ,  Hiromichi Horie ,  Takashi Sano ,  Yoshiko Minami ,  Satoshi Yamaguchi

IPC: C22C27/04 ,  B22F3/10 ,  C22C1/04 ,  C22C43/00 ,  H01J23/05 ,  C22F1/18

Abstract: According to one embodiment, a tungsten alloy includes a W component and a Hf component including HfC. A content of the Hf component in terms of HfC is 0.1 wt % or more and 3 wt % or less.