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公开(公告)号：US20250145859A1
公开(公告)日：2025-05-08
申请号：US18938313
申请日：2024-11-06
Applicant: KCTECH CO., LTD.
Inventor： Ji Hye KIM , Jae Ik LEE , Dam Bi KIM , Bo Hyeok CHOI
Abstract: A slurry composition for chemical mechanical polishing (CMP) is provided. The slurry composition includes colloidal silica particles, at least one nonionic compound among dextran, dextrose, and dextrin, an amino acid, a pH buffer, and a pH adjuster. The slurry composition may have a pH of 1 to 4.
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