公开(公告)号：US20220085036A1

公开(公告)日：2022-03-17

申请号：US17190348

申请日：2021-03-02

Applicant: KIOXIA CORPORATION

Inventor： Yasuhito YOSHIMIZU ,  Hiroshi NAKAKI ,  Kazuaki NAKAJIMA

IPC: H01L27/1157 ,  H01L23/00 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11551 ,  H01L27/11565 ,  H01L27/11578

Abstract: A semiconductor storage device includes first wiring layers stacked along a first direction, a first pillar including a first semiconductor layer and extending along the first direction through the first wiring layers, a second wiring layer disposed above the first pillar in the first direction and extending along a second direction perpendicular to the first direction, a semiconductor-containing layer including a first portion disposed on an upper end of the first pillar in the first direction, a second portion contacting the first portion and formed along the second wiring layer, and a third portion contacting an upper end of the second portion and extending along a third direction perpendicular to the first direction and crossing the second direction, and a first insulating layer between each of the first and second portions of the semiconductor-containing layer and the second wiring layer. An upper surface of the third portion contains a metal.