公开(公告)号：US20220093636A1

公开(公告)日：2022-03-24

申请号：US17199660

申请日：2021-03-12

Applicant: KIOXIA CORPORATION

Inventor： Toshiya MURAKAMI ,  Kenji TASHIRO ,  Hidenori MIYAGAWA ,  Reiko KITAMURA

IPC: H01L27/11582 ,  H01L23/522 ,  H01L27/11556

Abstract: A semiconductor memory device comprises: first conductive layers arranged in a first direction; a first semiconductor layer facing the first conductive layers; a second semiconductor layer facing the first conductive layers; second conductive layers arranged in the first direction; third conductive layers arranged in the first direction; a third semiconductor layer facing the second conductive layers and connected to the first semiconductor layer; a fourth semiconductor layer facing the third conductive layers and connected to the second semiconductor layer; a fourth conductive layer facing the third semiconductor layer; and a fifth conductive layer connected to the third conductive layers. A distance from a central axis of the third semiconductor layer to a central axis of the fourth semiconductor layer is larger than a distance from a central axis of the first semiconductor layer to a central axis of the second semiconductor layer.