公开(公告)号：US20250095733A1

公开(公告)日：2025-03-20

申请号：US18830510

申请日：2024-09-10

Applicant: Kioxia Corporation

Inventor： Dandan ZHAO ,  Hidenori MIYAGAWA ,  Masakazu GOTO

IPC: G11C13/00 ,  G11C5/06

Abstract: A storage device includes a memory cell including a first layer, a second layer, and a memory layer between the first and second layers and can switch between states including a first state and a second state in which electrical resistance is higher, and a circuit executing a write process. The control circuit is configured to, in the process to switch the memory layer from the second to first state, alternately apply to the second layer a first voltage having positive polarity and a second voltage having negative polarity, an absolute value of the second voltage being larger than the first voltage, and in the process to switch the memory layer from the first to second state, alternately apply to the second layer a third voltage having negative polarity and a fourth voltage having positive polarity, an absolute value of the fourth voltage being larger than the third voltage.

公开(公告)号：US20230091827A1

公开(公告)日：2023-03-23

申请号：US17692711

申请日：2022-03-11

Applicant: Kioxia Corporation

Inventor： Satoshi NAGASHIMA ,  Hidenori MIYAGAWA ,  Atsushi TAKAHASHI ,  Shota KASHIYAMA

IPC: H01L27/11582 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157

Abstract: A semiconductor memory device includes a substrate, a semiconductor layer extending in a first direction, a first conductive layer extending in a second direction and opposed to the semiconductor layer, an electric charge accumulating layer disposed between the semiconductor layer and the first conductive layer, and a first contact electrode extending in the first direction and connected to the first conductive layer. The first contact electrode has one end in the first direction farther from the substrate than the first conductive layer, the other end in the first direction closer to the substrate than the first conductive layer. The first conductive layer includes a first part opposed to the semiconductor layer and a second part connected to the first contact electrode. The second part has a thickness in the first direction larger than a thickness in the first direction of the first part.

公开(公告)号：US20220093636A1

公开(公告)日：2022-03-24

申请号：US17199660

申请日：2021-03-12

Applicant: KIOXIA CORPORATION

Inventor： Toshiya MURAKAMI ,  Kenji TASHIRO ,  Hidenori MIYAGAWA ,  Reiko KITAMURA

IPC: H01L27/11582 ,  H01L23/522 ,  H01L27/11556

Abstract: A semiconductor memory device comprises: first conductive layers arranged in a first direction; a first semiconductor layer facing the first conductive layers; a second semiconductor layer facing the first conductive layers; second conductive layers arranged in the first direction; third conductive layers arranged in the first direction; a third semiconductor layer facing the second conductive layers and connected to the first semiconductor layer; a fourth semiconductor layer facing the third conductive layers and connected to the second semiconductor layer; a fourth conductive layer facing the third semiconductor layer; and a fifth conductive layer connected to the third conductive layers. A distance from a central axis of the third semiconductor layer to a central axis of the fourth semiconductor layer is larger than a distance from a central axis of the first semiconductor layer to a central axis of the second semiconductor layer.