公开(公告)号：US11227915B2

公开(公告)日：2022-01-18

申请号：US16996491

申请日：2020-08-18

Applicant: KIOXIA CORPORATION

Inventor： Ryuta Tezuka ,  Mitsuhiro Noguchi ,  Tomoaki Shino

IPC: H01L29/06 ,  H01L23/00 ,  H01L25/18

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer on a semiconductor substrate and a second semiconductor layer on the first semiconductor layer. The first semiconductor layer is between the second semiconductor layer and the semiconductor substrate in a first direction. A first conductive layer is on the second semiconductor layer and contacting the second semiconductor layer. A third semiconductor layer is spaced from the second semiconductor layer in a second direction and connected to the first semiconductor layer. A second conductive layer is spaced from the first conductive layer in the second direction and connected to the third semiconductor layer. Each of the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer extends lengthwise in a third direction intersecting the first direction and the second direction.