公开(公告)号：US20220238345A1

公开(公告)日：2022-07-28

申请号：US17471684

申请日：2021-09-10

Applicant: Kioxia Corporation

Inventor： Atsushi TAKAHASHI ,  Ayata HARAYAMA ,  Yuya NAGATA

IPC: H01L21/3065 ,  H01J37/305 ,  H01L21/306

Abstract: A manufacturing method for a semiconductor device according to an embodiment includes performing first etching for forming a recess in a layer to be processed using a reactive ion etching method, performing a first treatment of supplying a silylation agent to the recess after the first etching, and performing second etching of etching at least a bottom surface of the recess using a reactive ion etching method after the first treatment.

公开(公告)号：US20230307520A1

公开(公告)日：2023-09-28

申请号：US17898224

申请日：2022-08-29

Applicant: KIOXIA CORPORATION

Inventor： Takuya KIKUCHI ,  Yuya NAGATA ,  Masaya TODA ,  Kappei IMAMURA ,  Tsubasa IMAMURA

IPC: H01L29/423 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/42384 ,  H01L29/66969 ,  H01L29/7869 ,  H01L27/1225

Abstract: According to one embodiment, a method for manufacturing a semiconductor device includes forming an electrode layer on a film containing indium and etching portions of the electrode layer left exposed by a mask layer until at least a portion of the film is exposed. A spacer film is formed to cover an upper surface of the electrode layer, side surfaces of the electrode layer, and an exposed upper surface of the film. The spacer film on the upper surface of the electrode layer and the exposed upper surface of the film is removed while leaving the spacer film on the side surfaces of the electrode layer. The exposed upper surface of the film is exposed to a reductive gas plasma to reduce portions of the film. These reduced portions of the film are then etched with a chemical solution.