公开(公告)号：US20220197152A1

公开(公告)日：2022-06-23

申请号：US17689934

申请日：2022-03-08

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

IPC: G03F7/20

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

公开(公告)号：US10415963B2

公开(公告)日：2019-09-17

申请号：US14727038

申请日：2015-06-01

Applicant: KLA-Tencor Corporation

Inventor： Tal Marciano ,  Eran Amit ,  Barak Bringoltz ,  Nuriel Amir ,  Amit Shaked

IPC: G06F17/50 ,  G01B11/27

Abstract: Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency.

公开(公告)号：US11054752B2

公开(公告)日：2021-07-06

申请号：US16102424

申请日：2018-08-13

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

IPC: G03F7/20 ,  H01L21/66 ,  H01L27/02 ,  H01L27/092

Abstract: An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically. The system may further adjust the overlay measurements with the overlay sensitivity calibration parameters.

公开(公告)号：US10571811B2

公开(公告)日：2020-02-25

申请号：US15159009

申请日：2016-05-19

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

IPC: G03F7/20 ,  H01L21/66 ,  H01L27/02 ,  H01L27/092

Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

公开(公告)号：US10551749B2

公开(公告)日：2020-02-04

申请号：US15442111

申请日：2017-02-24

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

IPC: G03F7/20

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

公开(公告)号：US20150292877A1

公开(公告)日：2015-10-15

申请号：US14727038

申请日：2015-06-01

Applicant: KLA-Tencor Corporation

Inventor： Tal Marciano ,  Eran Amit ,  Barak Bringoltz ,  Nuriel Amir ,  Amit Shaked

IPC: G01B11/27 ,  G06F17/50

CPC classification number: G01B11/27 ,  G06F17/5081

Abstract: Metrology methods and targets are provided, for estimating inter-cell process variation by deriving, from overlay measurements of at least three target cells having different designed misalignments, a dependency of a measured inaccuracy on the designed misalignments (each designed misalignment is between at least two overlapping periodic structures in the respective target cell). Inaccuracies which are related to the designed misalignments are reduced, process variation sources are detected and targets and measurement algorithms are optimized according to the derived dependency.

Abstract translation: 提供了计量方法和目标，用于通过从具有不同设计的不对准的至少三个目标单元的重叠测量推导出测量的不准确度对所设计的不对准的依赖性（每个设计的未对准在至少两个 各个靶细胞中重叠的周期性结构）。 与设计的不对准相关的不准确被减少，检测到过程变化源，并根据派生的依赖性优化目标和测量算法。

公开(公告)号：US11709433B2

公开(公告)日：2023-07-25

申请号：US17689934

申请日：2022-03-08

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

公开(公告)号：US20190004438A1

公开(公告)日：2019-01-03

申请号：US16102424

申请日：2018-08-13

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

IPC: G03F7/20 ,  H01L21/66

Abstract: An overlay metrology system includes one or more processors coupled to an illumination source to direct illumination to a sample and a detector to capture diffracted orders of radiation from the sample. The system may generate overlay sensitivity calibration parameters based on differential measurements of a calibration target including two overlay target cells on the sample, where first-layer target elements and second-layer target elements of the overlay target cells are distributed with a common pitch along a measurement direction and are misregistered with a selected offset value in opposite directions. The system may further determine overlay measurements based on differential measurements of additional overlay target cells with two wavelengths, where first-layer target elements and second-layer target elements of the additional overlay target cells are distributed with the common pitch and are formed to overlap symmetrically. The system may further adjust the overlay measurements with the overlay sensitivity calibration parameters.

公开(公告)号：US20180188663A1

公开(公告)日：2018-07-05

申请号：US15442111

申请日：2017-02-24

Applicant: KLA-Tencor Corporation

Inventor： Vladimir Levinski ,  Amnon Manassen ,  Eran Amit ,  Nuriel Amir ,  Liran Yerushalmi ,  Amit Shaked

IPC: G03F9/00 ,  G01B11/27

CPC classification number: G03F7/70625 ,  G03F7/70633 ,  G03F7/70683

Abstract: Metrology targets, production processes and optical systems are provided, which enable metrology of device-like targets. Supplementary structure(s) may be introduced in the target to interact optically with the bottom layer and/or with the top layer of the target and target cells configurations enable deriving measurements of device-characteristic features. For example, supplementary structure(s) may be designed to yield Moiré patterns with one or both layers, and metrology parameters may be derived from these patterns. Device production processes were adapted to enable production of corresponding targets, which may be measured by standard or by provided modified optical systems, configured to enable phase measurements of the Moiré patterns.

公开(公告)号：US20160266505A1

公开(公告)日：2016-09-15

申请号：US15159009

申请日：2016-05-19

Applicant: KLA-Tencor Corporation

Inventor： Eran Amit ,  Daniel Kandel ,  Dror Alumot ,  Amit Shaked ,  Liran Yerushalmi

IPC: G03F9/00

CPC classification number: G03F7/70633 ,  H01L22/12 ,  H01L27/0207 ,  H01L27/092

Abstract: Metrology methods and targets are provided, that expand metrological procedures beyond current technologies into multi-layered targets, quasi-periodic targets and device-like targets, without having to introduce offsets along the critical direction of the device design. Several models are disclosed for deriving metrology data such as overlays from multi-layered target and corresponding configurations of targets are provided to enable such measurements. Quasi-periodic targets which are based on device patterns are shown to improve the similarity between target and device designs, and the filling of the surroundings of targets and target elements with patterns which are based on device patterns improve process compatibility. Offsets are introduced only in non-critical direction and/or sensitivity is calibrated to enable, together with the solutions for multi-layer measurements and quasi-periodic target measurements, direct device optical metrology measurements.

Abstract translation: 提供了计量方法和目标，将计量过程超越现有技术扩展到多层目标，准周期目标和设备样目标，而不必沿着设备设计的关键方向引入偏移量。 公开了用于导出诸如来自多层目标的覆盖层的度量数据的几个模型，并且提供了相应的目标配置以实现这种测量。 显示基于设备模式的准周期性目标，以改善目标和设备设计之间的相似性，并且使用基于设备模式的模式来填充目标和目标元素的环境，从而提高了流程兼容性。 偏移仅在非关键方向引入，和/或灵敏度被校准，以便与多层测量和准周期性目标测量的解决方案一起使用直接设备光学测量测量。